公开(公告)号：US5994007A

公开(公告)日：1999-11-30

申请号：US213373

申请日：1998-12-17

申请人： Yasuhiko Sato ,  Atsushi Ando ,  Yasunobu Onishi ,  Yoshihiko Nakano ,  Shuji Hayase ,  Rikako Kani

发明人： Yasuhiko Sato ,  Atsushi Ando ,  Yasunobu Onishi ,  Yoshihiko Nakano ,  Shuji Hayase ,  Rikako Kani

IPC分类号： G03F7/09 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F7/203 ,  G03F7/091 ,  G03F7/093 ,  Y10S430/143

摘要： Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.

摘要翻译： 公开了一种图案形成方法，包括以下步骤：提供抗蚀剂膜，对抗蚀剂膜施加曝光，直接在抗蚀剂膜上方的膜上，并且将抗蚀剂膜正下方的另一个膜制成绝缘体，施加带电的束曝光 将抗蚀膜直接在抗蚀剂膜上方的膜和抗蚀剂膜正下方的另一个膜导电到抗蚀剂膜上，并且使抗蚀剂膜显影以形成抗蚀剂图案。

公开(公告)号：US5985513A

公开(公告)日：1999-11-16

申请号：US865067

申请日：1997-05-29

申请人： Rikako Kani ,  Yoshihiko Nakano ,  Shuji Hayase

发明人： Rikako Kani ,  Yoshihiko Nakano ,  Shuji Hayase

IPC分类号： C08K5/14 ,  G03F7/075 ,  G03C1/73

CPC分类号： G03F7/0757 ,  C08K5/14 ,  G03F7/0754

摘要： The present invention relates to a photosensitive composition comprising a polysilane having a repeating unit represented by the following general formula (1) and a benzophenone type compound having an organic peroxide, ##STR1## wherein Ar represents a substituted or unsubstituted aryl group.

摘要翻译： 本发明涉及一种光敏组合物，其包含具有由以下通式（1）表示的重复单元的聚硅烷和具有有机过氧化物的二苯甲酮型化合物，其中Ar表示取代或未取代的芳基。

公开(公告)号：US06569595B1

公开(公告)日：2003-05-27

申请号：US09512286

申请日：2000-02-24

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

IPC分类号： G03F700

CPC分类号： G03F7/091

摘要： A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作膜上形成矩阵图案，用掩模材料层填充矩阵图案中的开放空间，掩模材料层含有至少一种具有由 在工作薄膜上的以下通式（CP1）〜（CP4），通过去除矩阵图案形成掩模材料图案，并通过将掩模材料图案转印到工作薄膜上形成工作薄膜图案：其中R是卤素原子， 氢原子或取代或未取代的烃基，A为多价有机基团，m，n和k分别表示正整数。

公开(公告)号：US6022814A

公开(公告)日：2000-02-08

申请号：US22493

申请日：1998-02-12

申请人： Satoshi Mikoshiba ,  Yoshihiko Nakano ,  Shuji Hayase

发明人： Satoshi Mikoshiba ,  Yoshihiko Nakano ,  Shuji Hayase

IPC分类号： C01B33/12 ,  C08G77/04 ,  C08G77/38 ,  C08G77/58 ,  H01L21/312 ,  H01L21/316 ,  H01L21/44

CPC分类号： C08G77/38 ,  H01L21/316 ,  H01L21/3122

摘要： A material of forming silicon oxide film comprising a polymer having a repeating unit represented by the following general formula (1A), (1B) or (1C); ##STR1## wherein R.sup.1 is a substituent group which can be eliminated at a temperature ranging from 250.degree. C. to the glass transition point of the material of forming silicon oxide film; and R.sup.2 is a substituent group which cannot be eliminated at a temperature of 250.degree. C. or more.

摘要翻译： 一种形成氧化硅膜的材料，包括具有由以下通式（1A），（1B）或（1C）表示的重复单元的聚合物; 其中R1是可在250℃至形成氧化硅膜的材料的玻璃化转变点的温度范围内去除的取代基; R2是在250℃以上的温度下不能除去的取代基。

公开(公告)号：US6004730A

公开(公告)日：1999-12-21

申请号：US921613

申请日：1997-09-02

申请人： Satoshi Mikoshiba ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase

发明人： Satoshi Mikoshiba ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase

IPC分类号： C08G77/48 ,  C08G77/62 ,  C08L83/04 ,  C08L83/16 ,  G03F7/075 ,  H01L21/027 ,  H01L21/312 ,  G03F7/26

CPC分类号： G03F7/0757

摘要： There is proposed a method of forming an insulating film pattern, which enables an insulating pattern of high precision and low dielectric constant to be easily obtained by means of an alkali development with basic solution. This method comprises the steps of coating a photosensitive composition comprising a first silicone polymer having a specific monomer and a second silicone polymer having a specific monomer on a substrate thereby to form a film of photosensitive composition, selectively exposing the film of photosensitive composition, alkali-developing the exposed film to form a pattern, and heat-treating the pattern of the photosensitive composition film.

摘要翻译： 提出了一种形成绝缘膜图案的方法，其能够通过碱性溶液的碱显影容易地获得高精度和低介电常数的绝缘图案。 该方法包括以下步骤：将包含具有特定单体的第一硅氧烷聚合物和具有特定单体的第二硅氧烷聚合物的光敏组合物涂布在基材上，从而形成感光组合物的膜，选择性地曝光感光组合物的膜， 将曝光的膜显影以形成图案，并对感光性组合物膜的图案进行热处理。

公开(公告)号：US5198520A

公开(公告)日：1993-03-30

申请号：US673185

申请日：1991-03-21

申请人： Yasunobu Onishi ,  Shuji Hayase ,  Rumiko Horiguchi ,  Akiko Hirao

发明人： Yasunobu Onishi ,  Shuji Hayase ,  Rumiko Horiguchi ,  Akiko Hirao

IPC分类号： C08G77/14 ,  C08G77/26 ,  C08G77/48 ,  C08G77/60 ,  C08L83/16 ,  G03F7/075

CPC分类号： G03F7/0754 ,  C08G77/14 ,  C08G77/26 ,  C08G77/48 ,  C08G77/60 ,  C08L83/16 ,  G03F7/0757

摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.

摘要翻译： 本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。 本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。 本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。 本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂，代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。 作为具有这种光敏性的物质，可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。 因此，本发明的有机硅抗蚀剂材料，特别是第二和第三有机硅抗蚀剂材料是碱显影的，并且还具有优异的耐氧等离子体性。 因此，它们可以用作双层抗蚀剂系统中的顶层膜，使得可以形成非常精细的抗蚀剂图案，并且具有最少数量的加工步骤。

公开(公告)号：US5017453A

公开(公告)日：1991-05-21

申请号：US304231

申请日：1989-01-31

申请人： Yasunobu Onishi ,  Shuji Hayase ,  Rumiko Horiguchi ,  Akiko Hirao

发明人： Yasunobu Onishi ,  Shuji Hayase ,  Rumiko Horiguchi ,  Akiko Hirao

IPC分类号： C08G77/14 ,  C08G77/26 ,  C08G77/48 ,  C08G77/60 ,  C08L83/16 ,  G03F7/075

CPC分类号： C08L83/16 ,  C08G77/14 ,  C08G77/26 ,  C08G77/48 ,  C08G77/60 ,  G03F7/0754 ,  G03F7/0757

摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrogenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.

公开(公告)号：US07538169B2

公开(公告)日：2009-05-26

申请号：US11186948

申请日：2005-07-22

申请人： Lois Hobson ,  Shuji Hayase ,  Yoshihiko Nakano

发明人： Lois Hobson ,  Shuji Hayase ,  Yoshihiko Nakano

IPC分类号： C08F12/20 ,  C08F12/30

CPC分类号： C08J5/2287 ,  C08J2357/12 ,  H01B1/122 ,  H01M8/04186 ,  H01M8/1004 ,  H01M8/1009 ,  H01M8/1027 ,  H01M8/1032 ,  H01M8/1039 ,  H01M8/1048 ,  H01M8/1067 ,  H01M2300/0082 ,  H01M2300/0091

摘要： Disclosed is an ion conductive film containing a composite body between an ion conductive polymer and a nitrogen-containing compound. The nitrogen-containing compound has an immobilized portion to the ion conductive polymer and exhibits an enantiomeric isomer structure when protonated. Alternatively, the nitrogen-containing compound is capable of assuming a chemical structure in which the multiple bond represented by the double bound is moved, with the atoms constituting the molecule not changing their positions.

公开(公告)号：US06410748B1

公开(公告)日：2002-06-25

申请号：US09847387

申请日：2001-05-03

申请人： Naomi Shida ,  Toru Ushirogouchi ,  Koji Asakawa ,  Takeshi Okino ,  Shuji Hayase ,  Yoshihiko Nakano ,  Makoto Nakase

发明人： Naomi Shida ,  Toru Ushirogouchi ,  Koji Asakawa ,  Takeshi Okino ,  Shuji Hayase ,  Yoshihiko Nakano ,  Makoto Nakase

IPC分类号： C07D20948

CPC分类号： G03F7/0397 ,  C08F246/00 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0758 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115

摘要： A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3  (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.

摘要翻译： 由以下通式（m-1）表示的单体：其中R是具有脂环骨架的基团，R 2可以相同或不同，分别为氢原子，卤素原子或一价有机基团，X 1为二价有机基团 含有杂原子，j为0〜3的整数，R1为选自下列基团的基团，具有Si（R1-1）的一价有机基团，X2和X3中的任一个为含有杂原子的二价有机基团，k m为0〜3的整数，R4为二价烷基，R6可以相同或不同，分别为氢原子，卤素原子或一价有机基团。

公开(公告)号：US06384321B1

公开(公告)日：2002-05-07

申请号：US09667562

申请日：2000-09-22

申请人： Satoshi Mikoshiba ,  Hiroyasu Sumino ,  Maki Yonetsu ,  Shuji Hayase

发明人： Satoshi Mikoshiba ,  Hiroyasu Sumino ,  Maki Yonetsu ,  Shuji Hayase

IPC分类号： H01L3104

CPC分类号： H01M6/168 ,  H01G9/2004 ,  H01G9/2009 ,  H01G9/2031 ,  H01G9/2059 ,  H01G9/2077 ,  H01M6/162 ,  H01M6/166 ,  Y02E10/542 ,  Y02P70/521

摘要： The present invention provides an electrolyte composition, comprising an electrolyte containing at least one kind of an imidazolium salt selected from the group consisting of 1-methyl-3-propyl imidazolium iodide, 1-methyl-3-isopropyl imidazolium iodide, 1-methyl-3-butyl imidazolium iodide, 1-methyl-3-isobutyl imidazolium iodide and 1-methyl-3-sec-butyl imidazolium iodide, a halogen-containing compound dissolved in the electrolyte, and a compound dissolved in the electrolyte and containing at least one element selected from the group consisting of N, P and S, the compound being capable of forming an onium salt together with the halogen-containing compound.

摘要翻译： 本发明提供一种电解质组合物，其包含含有选自1-甲基-3-丙基碘化咪唑，碘化1-甲基-3-异丙基咪唑鎓，1-甲基-3-异丙基咪唑鎓碘化物， 碘化3-丁基咪唑鎓，碘化1-甲基-3-异丁基咪唑鎓，碘化1-甲基-3-仲丁基咪唑鎓，溶解在电解质中的含卤素化合物，溶解在电解质中的化合物，含有至少一种 选自N，P和S的元素，所述化合物能够与含卤素的化合物一起形成鎓盐。