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公开(公告)号：US06451217B1
公开(公告)日：2002-09-17
申请号：US09514676
申请日：2000-02-28
IPC分类号： H01L213065
CPC分类号： H01J37/32192 , H01J37/32357 , H01J37/32366 , H01L21/3065
摘要： A wafer etching method wherein hydrogen gas, ammonia gas or mixed gas containing one of these gases is added to sulfur hexafluoride gas to suppress the occurrence of white turbidity on the surface of the wafer at the time of etching and to enable high quality mirror polishing of the wafer. In one embodiment, a mixed gas obtained by mixing SF6 gas G1 of a bomb 31 and H2 gas G2 of a bomb 32 in a predetermined ratio is fed to a discharge tube 2 and a microwave M is generated from a microwave oscillator 4 to cause plasma discharge. Further, the entire surface of the silicon wafer W can be flattened by locally etching the surface of the silicon wafer W by an activated species gas G sprayed from the nozzle portion 20.
摘要翻译： 将其中含有这些气体的氢气，氨气或混合气体加入到六氟化硫气体中的晶片蚀刻方法，以抑制在蚀刻时在晶片表面上出现白浊，并且能够实现高质量的镜面抛光 晶圆。 在一个实施方案中，通过将炸弹31的SF 6气体G1和预定比例的炸弹32的H2气体G2混合而获得的混合气体被供给到放电管2，并且从微波振荡器4产生微波M以产生等离子体 卸货。 此外，通过从喷嘴部分20喷射的活化物质气体G局部蚀刻硅晶片W的表面，可以使硅晶片W的整个表面变平。
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公开(公告)号：US06280645B1
公开(公告)日：2001-08-28
申请号：US09336631
申请日：1999-06-18
IPC分类号： H01L213065
CPC分类号： H01L21/3065 , H01J37/32192 , H01J2237/336 , H01L21/31056 , H01L21/67069
摘要： A wafer flattening process and system enables a reduction of the surface roughness of a wafer resulting from local etching. A silicon wafer W is brought into close proximity to a nozzle portion 20 to feed SF6 gas to an alumina discharge tube 2, a plasma generator 1 is used to cause plasma discharge and spray a first activated species gas from the nozzle portion 20 to the silicon wafer W side, an X-Y drive mechanism 4 is used to make the nozzle portion 20 scan to perform a local etching step. Then the silicon wafer W is moved away from the nozzle portion 20 and O2 gas and CF4 gas are fed to the alumina discharge tube. At this time, the O2 gas is set to be greater in amount than the CF4 gas. When this mixed gas is made to discharge to generate plasma, a second activated species gas diffuses from the nozzle portion 20 to the entire surface of the silicon wafer W. Since there is a larger amount of O radicals than F radicals, the reaction product resulting from the O radicals deposit in fine depressions causing roughness and the front surface of the silicon wafer W is smoothed.
摘要翻译： 晶片平整工艺和系统能够降低由局部蚀刻产生的晶片的表面粗糙度。 将硅晶片W靠近喷嘴部分20以将SF6气体供给到氧化铝放电管2，等离子体发生器1用于引起等离子体放电，并将第一活化物质气体从喷嘴部分20喷射到硅 晶片W侧，使用XY驱动机构4使喷嘴部20进行扫描，进行局部蚀刻工序。 然后将硅晶片W从喷嘴部分20移开，将O 2气体和CF 4气体送入氧化铝放电管。 此时，将O 2气体设定为比CF 4气体大。 当混合气体排出以产生等离子体时，第二活化物质气体从喷嘴部分20扩散到硅晶片W的整个表面。由于与F自由基相比存在大量的O自由基，所以产生反应产物 从形成粗糙度的细小凹陷中的O自由基沉积物和硅晶片W的前表面平滑化。
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13.发明授权
公开(公告)号：US6159388A
公开(公告)日：2000-12-12
申请号：US13705
申请日：1998-01-26
IPC分类号： H05H1/46 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/67253 , H01L21/67069
摘要： Plasma etching method and apparatus for removing relatively thick portions from wafers by etching while measuring an actual etch quantity to thereby manufacture the wafers excellent in flatness quality on a mass-production basis. A conduit 20 of a plasma generator 2 is positioned above a relatively thick portion 111 of the wafer 110 to etch away a wafer material from the relatively thick portion 111 by ejecting a fluorine gas G. A laser beam L0 is emitted from a laser displacement meter 30 of a measuring apparatus 3 to detect an interference state between a reflected light beam L1 from the relatively thick portion 111 and a reflected light beam L2 form a reflecting plate 32 and count periodical changes of the interference state. When the count value m coincides with an integral value derived by dividing a desired etch quantity by a half wavelength of the laser beam L0, etching of the relatively thick portion 111 by the fluorine gas G is terminated.
摘要翻译： 等离子体蚀刻方法和装置，用于通过蚀刻在测量实际蚀刻量的同时通过蚀刻从晶片去除相对较厚的部分，从而在大规模生产的基础上制造平坦度优异的晶片。 等离子体发生器2的管道20位于晶片110的较厚部分111的上方，通过喷射氟气G从相对厚的部分111中蚀刻出晶片材料。激光束L0从激光位移计 检测来自相对较厚部分111的反射光束L1与反射光束L2之间的干涉状态的测量装置30的反射板32，并计算干涉状态的周期性变化。 当计数值m与通过将期望的蚀刻量除以激光束L0的半波长而导出的积分值一致时，终止通过氟气G蚀刻较厚部分111。
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公开(公告)号：US6126531A
公开(公告)日：2000-10-03
申请号：US234955
申请日：1999-01-21
申请人： Shinya Iida , Akitoshi Yoshida
发明人： Shinya Iida , Akitoshi Yoshida
IPC分类号： B24B57/02 , B24B57/00 , B24C7/00 , H01L21/304
CPC分类号： B24B37/04 , B24B57/02 , H01L21/31053
摘要： A slurry recycling system of a CMP apparatus, and a method of the same, which restores the state of agglomeration of the abrasive grains to the initial state to enable reuse of the slurry and thereby reduces the cost of the polishing work and improves the operating rate of the CMP apparatus. Slurry S used in the CMP apparatus 1 is sent to a dispersion chamber 31. A vibration element 40 of an ultrasonic dispersion apparatus 4 mounted in the dispersion chamber 31 is made to vibrate by a vibrator 41 to generate ultrasonic vibration energy, whereby the agglomerated particles in the slurry S are made to disperse. Suitably thereafter, the slurry S is returned to the slurry feed apparatus 300 to enable reuse of the slurry S.
摘要翻译： 一种CMP装置的浆料循环系统及其方法，其将磨粒的附聚状态恢复到初始状态，以使浆料能够再利用，从而降低了抛光工作的成本并提高了加工率 的CMP装置。 在CMP装置1中使用的浆料S被送到分散室31.安装在分散室31中的超声波分散装置4的振动元件40通过振动器41振动以产生超声波振动能，由此附聚颗粒 在浆料S中分散。 此后，适当地将浆料S返回到浆料供给装置300以使浆料S能够再利用。
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公开(公告)号：US06496748B1
公开(公告)日：2002-12-17
申请号：US09234937
申请日：1999-01-21
IPC分类号： G06F1900
CPC分类号： H01L21/67069 , H01L21/30625
摘要： A wafer flattening process designed to flatten the entire surface of the wafer including the outer rim of the wafer by inserting dummy data corresponding to the data of the outer rim of the wafer in the data of the outside of the wafer, and a storage medium for the same. An area S is set at an outside position exactly an etching radius r from an outer rim Wc of the wafer Wc ahd the nozzle relative speed at the position-speed data D of points P4-1 to P4-3 closest to an imaginary line L passing through the point P4 inside the area S near the outer rim Wc is set to be the same as the nozzle relative speed of the position-speed data D of the point P4. Due to this, the nozzle spraying the activated species gas G moves as if along the imaginary line L and the portion of the point P4 is etched flat by superposition of the activated species gas G of the nozzle passing through the points P4-1 to P4-3, the point P4, and the point P6.
摘要翻译： 一种晶片平坦化工艺，其被设计成通过将对应于晶片的外缘的数据的伪数据插入到晶片外部的数据中，将包括晶片的外边缘的晶片的整个表面平坦化，以及存储介质 一样。 区域S在外侧位置从晶片Wc的外缘Wc精确地设定为蚀刻半径r，与位于距虚拟线L最近的点P4-1〜P4-3的位置速度数据D处的喷嘴相对速度 穿过外缘Wc附近的区域S内的点P4被设定为与点P4的位置速度数据D的喷嘴相对速度相同。 由此，喷射活化物质气体G的喷嘴如同沿着假想线L移动，并且点P4的部分通过叠加穿过点P4-1至P4的喷嘴的活化种类气体G而被平坦地蚀刻 -3，点P4和点P6。
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公开(公告)号：US06316369B1
公开(公告)日：2001-11-13
申请号：US09539114
申请日：2000-03-30
IPC分类号： H01L2100
CPC分类号： H01J37/32192 , H01J37/32477
摘要： A corrosion-resistant system and method for a plasma etching apparatus are provided which are capable of reducing a corrosion or erosion phenomenon of a discharge tube, equipment and/or elements in a chamber of the plasma etching apparatus which is used for localized etching. A micro wave M is oscillated from a micro wave oscillator 20 toward a mixed gas of CF4 and O2 in a quartz discharge tube 110 to thereby produce plasma discharge. The micro wave oscillator 20 is controlled in an on-off manner by means of a pulse generator 21, to thereby oscillate a pulsed micro wave M. As a result, it is possible to reduce the erosion of the quartz discharge tube 110 caused by an active species gas G generated by the plasma discharge. Preferably, a corrosion-resistant oil A is filled in the chamber 100 for preventing an X-Y drive mechanism 130, etc., therein from being corroded or eroded by the active species gas G diffusing in the chamber 100.
摘要翻译： 提供一种用于等离子体蚀刻装置的耐腐蚀系统和方法，其能够减少用于局部蚀刻的等离子体蚀刻装置的放电管，设备和/或元件的腐蚀或侵蚀现象。 微波M在石英放电管110中从微波振荡器20向CF4和O2的混合气体振荡，从而产生等离子体放电。 微波振荡器20通过脉冲发生器21以开 - 关方式被控制，从而使脉冲微波M振荡。结果，可以减少由一个脉冲发生器21引起的石英放电管110的侵蚀 活性物质G由等离子体放电产生。 优选地，在室100中填充有耐腐蚀油A，以防止其中的X-Y驱动机构130等被在室100中扩散的活性种类气体G腐蚀或侵蚀。
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公开(公告)号：US06306245B1
公开(公告)日：2001-10-23
申请号：US09435575
申请日：1999-11-08
申请人： Michihiko Yanagisawa , Shinya Iida
发明人： Michihiko Yanagisawa , Shinya Iida
IPC分类号： C23F102
CPC分类号： H01J37/32192 , H01J37/3244
摘要： A plasma etching method and apparatus are provided in which a distance between an ejection opening (20a) in a plasma generator (2) for ejecting an active species gas and a surface of an object to be etched can be changed to thereby shorten the time required for a surface flattening operation and reduce the cost of equipment as well. To this end, the ejection opening (20a) of a predetermined diameter is disposed in confrontation with a desired convex of the object to be etched in the form of a wafer (110). The active species gas in the form of an F gas (G) is ejected from the ejection opening (20a) to the convex to thereby flatten it through etching. A distance between the ejection opening and the convex is changed by means of a Z drive mechanism (4) to provide an etching area corresponding to an area of the convex, thus performing effective flattening of the wafer (110).
摘要翻译： 提供一种等离子体蚀刻方法和装置，其中可以改变用于喷射活性种类气体的等离子体发生器（2）中的喷射口（20a）与被蚀刻物体的表面之间的距离，从而缩短所需的时间 用于表面平整操作，并降低设备成本。 为此，将预定直径的喷射口（20a）与晶片（110）形式的要被蚀刻的物体的期望的凸起相对置。 F气体（G）形式的活性物质气体从喷射口（20a）喷射到凸起，从而通过蚀刻使其变平。 通过Z驱动机构（4）改变喷射口和凸起之间的距离，以提供对应于凸面区域的蚀刻区域，从而进行晶片（110）的有效平坦化。
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公开(公告)号：US6159082A
公开(公告)日：2000-12-12
申请号：US257726
申请日：1999-03-02
申请人： Misuo Sugiyama , Xu Jin Wang , Shinya Iida
发明人： Misuo Sugiyama , Xu Jin Wang , Shinya Iida
摘要： The bottom of each collection groove for collecting a used abrasive slurry and a rinsing solution is formed like the letter V, an exhaust port is formed at the lowest position of the bottom of the groove, the collection pipe of a slurry supply unit and the collection pipe of a rinsing solution supply unit are connected to the exhaust port, and the collection pipe of the rinsing solution exhaust unit is connected to a suction pump for forcedly discharging the rinsing solution by suction.
摘要翻译： 用于收集使用过的磨料浆料和冲洗溶液的每个收集槽的底部形成为字母V，在槽的底部的最下部形成排气口，浆料供应单元的收集管和收集 冲洗溶液供给单元的管道连接到排气口，并且冲洗溶液排出单元的收集管连接到用于通过抽吸强制排出冲洗溶液的抽吸泵。
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公开(公告)号：US5980769A
公开(公告)日：1999-11-09
申请号：US965281
申请日：1997-11-06
申请人： Michihiko Yanagisawa , Shinya Iida
发明人： Michihiko Yanagisawa , Shinya Iida
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B44C1/22 , C03C15/00
CPC分类号： H01J37/32192 , H01J37/3244
摘要： A plasma etching method and apparatus are provided in which a distance between an ejection opening (20a) in a plasma generator (2) for ejecting an active species gas and a surface of an object to be etched can be changed to thereby shorten the time required for a surface flattening operation and reduce the cost of equipment as well. To this end, the ejection opening (20a) of a predetermined diameter is disposed in confrontation with a desired convex of the object to be etched in the form of a wafer (110). The active species gas in the form of an F gas (G) is ejected from the ejection opening (20a) to the convex to thereby flatten it through etching. A distance between the ejection opening and the convex is changed by means of a Z drive mechanism (4) to provide an etching area corresponding to an area of the convex, thus performing effective flattening of the wafer (110).
摘要翻译： 提供一种等离子体蚀刻方法和装置，其中可以改变用于喷射活性种类气体的等离子体发生器（2）中的喷射口（20a）与被蚀刻物体的表面之间的距离，从而缩短所需的时间 用于表面平整操作，并降低设备成本。 为此，将预定直径的喷射口（20a）与晶片（110）形式的要被蚀刻的物体的期望的凸起相对置。 F气体（G）形式的活性物质气体从喷射口（20a）喷射到凸起，从而通过蚀刻使其变平。 通过Z驱动机构（4）改变喷射口和凸起之间的距离，以提供对应于凸面区域的蚀刻区域，从而进行晶片（110）的有效平坦化。
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公开(公告)号：US4427515A
公开(公告)日：1984-01-24
申请号：US256960
申请日：1981-04-23
申请人： Akitsuna Yuhara , Shinya Iida , Hideo Abe , Kiyoharu Kishimoto , Katashi Hazama
发明人： Akitsuna Yuhara , Shinya Iida , Hideo Abe , Kiyoharu Kishimoto , Katashi Hazama
CPC分类号： H03H3/08
摘要： A surface acoustic wave device, a method for manufacturing the same and a manufacturing equipment therefor are disclosed. In the surface acoustic wave device having functional elements such as input and output interdigital electrodes of Al, Al-Si alloy or Al-Cu-Si alloy thin film strips and a grating type reflector, arranged on a piezoelectric substrate and any other bus conductors arranged on the same substrate, at least a portion of the functional elements and the bus conductors having a high frequency metal strip having a line width of no more than 2 .mu.m, at least the metal strip having the width of no more than 2 .mu.m has a film thickness of no less than 0.25 .mu.m at least a portion thereof but no more than an upper limit of an effective film thickness determined by a required characteristic of the surface acoustic wave device, whereby a transfer characteristic of the surface acoustic wave device is compensated and controlled, for example, a reflection efficiency of a grating type reflector is improved or a loss due to a D.C. resistance of the input and output electrodes is reduced.
摘要翻译： 公开了一种声表面波装置及其制造方法及其制造装置。 在具有诸如Al，Al-Si合金或Al-Cu-Si合金薄膜条的输入和输出叉指电极等功能元件的表面声波装置和布置在压电基板上的任何其它总线导体布置的光栅型反射器 在相同的基板上，功能元件和总线导体的至少一部分具有线宽不大于2μm的高频金属条，至少宽度不大于2μm的金属条 具有至少一部分的膜厚不小于0.25μm，但不超过由声表面波装置的要求特性确定的有效膜厚度的上限，由此表面声波装置的传递特性 被补偿和控制，例如，光栅型反射器的反射效率提高或由于输入和输出电极的直流电阻的损耗减小。
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