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公开(公告)号：US06451217B1
公开(公告)日：2002-09-17
申请号：US09514676
申请日：2000-02-28
IPC分类号： H01L213065
CPC分类号： H01J37/32192 , H01J37/32357 , H01J37/32366 , H01L21/3065
摘要： A wafer etching method wherein hydrogen gas, ammonia gas or mixed gas containing one of these gases is added to sulfur hexafluoride gas to suppress the occurrence of white turbidity on the surface of the wafer at the time of etching and to enable high quality mirror polishing of the wafer. In one embodiment, a mixed gas obtained by mixing SF6 gas G1 of a bomb 31 and H2 gas G2 of a bomb 32 in a predetermined ratio is fed to a discharge tube 2 and a microwave M is generated from a microwave oscillator 4 to cause plasma discharge. Further, the entire surface of the silicon wafer W can be flattened by locally etching the surface of the silicon wafer W by an activated species gas G sprayed from the nozzle portion 20.
摘要翻译： 将其中含有这些气体的氢气，氨气或混合气体加入到六氟化硫气体中的晶片蚀刻方法，以抑制在蚀刻时在晶片表面上出现白浊，并且能够实现高质量的镜面抛光 晶圆。 在一个实施方案中，通过将炸弹31的SF 6气体G1和预定比例的炸弹32的H2气体G2混合而获得的混合气体被供给到放电管2，并且从微波振荡器4产生微波M以产生等离子体 卸货。 此外，通过从喷嘴部分20喷射的活化物质气体G局部蚀刻硅晶片W的表面，可以使硅晶片W的整个表面变平。
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公开(公告)号：US06280645B1
公开(公告)日：2001-08-28
申请号：US09336631
申请日：1999-06-18
IPC分类号： H01L213065
CPC分类号： H01L21/3065 , H01J37/32192 , H01J2237/336 , H01L21/31056 , H01L21/67069
摘要： A wafer flattening process and system enables a reduction of the surface roughness of a wafer resulting from local etching. A silicon wafer W is brought into close proximity to a nozzle portion 20 to feed SF6 gas to an alumina discharge tube 2, a plasma generator 1 is used to cause plasma discharge and spray a first activated species gas from the nozzle portion 20 to the silicon wafer W side, an X-Y drive mechanism 4 is used to make the nozzle portion 20 scan to perform a local etching step. Then the silicon wafer W is moved away from the nozzle portion 20 and O2 gas and CF4 gas are fed to the alumina discharge tube. At this time, the O2 gas is set to be greater in amount than the CF4 gas. When this mixed gas is made to discharge to generate plasma, a second activated species gas diffuses from the nozzle portion 20 to the entire surface of the silicon wafer W. Since there is a larger amount of O radicals than F radicals, the reaction product resulting from the O radicals deposit in fine depressions causing roughness and the front surface of the silicon wafer W is smoothed.
摘要翻译： 晶片平整工艺和系统能够降低由局部蚀刻产生的晶片的表面粗糙度。 将硅晶片W靠近喷嘴部分20以将SF6气体供给到氧化铝放电管2，等离子体发生器1用于引起等离子体放电，并将第一活化物质气体从喷嘴部分20喷射到硅 晶片W侧，使用XY驱动机构4使喷嘴部20进行扫描，进行局部蚀刻工序。 然后将硅晶片W从喷嘴部分20移开，将O 2气体和CF 4气体送入氧化铝放电管。 此时，将O 2气体设定为比CF 4气体大。 当混合气体排出以产生等离子体时，第二活化物质气体从喷嘴部分20扩散到硅晶片W的整个表面。由于与F自由基相比存在大量的O自由基，所以产生反应产物 从形成粗糙度的细小凹陷中的O自由基沉积物和硅晶片W的前表面平滑化。
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公开(公告)号：US06360687B1
公开(公告)日：2002-03-26
申请号：US09412185
申请日：1999-10-04
IPC分类号： C23C16511
CPC分类号： H01L21/67167 , B24B37/345 , H01L21/30625 , H01L21/67028 , H01L21/67219 , H01L21/67745
摘要： A wafer flattening system is provided to consecutively and automatically remove the natural oxide film from a wafer and flatten and smooth the wafer so as to improve the surface roughness of the wafer and improve the work efficiency. A step of immersing the wafer in an aqueous solution of hydrofluoric acid of a natural oxide film removing device is performed so as to remove the natural oxide film, then followed by a step of locally etching the surface of the wafer at a local etching apparatus by an activated species gas produced from SF6 gas to flatten the surface. Then, a step of giving a mirror finish to the wafer surface by a CMP apparatus is performed to smooth it. It is also possible to perform the step of removal of the natural oxide film by spraying the entire surface of the wafer by an activated species gas produced from a mixed gas of CF4 gas and H2 gas and possible to perform the step of smoothing by spraying the entire surface of the wafer by an activated species gas produced from a mixed gas of CF4 gas and O2 gas.
摘要翻译： 提供晶片平坦化系统，以从晶片连续自动地除去天然氧化膜，使晶片平坦化和平滑化，从而提高晶片的表面粗糙度，提高工作效率。 进行将晶片浸渍在天然氧化膜除去装置的氢氟酸的水溶液中的步骤，以除去天然氧化物膜，然后在局部蚀刻装置上局部蚀刻晶片的表面， 由SF6气体产生的活化物质气体使表面变平。 然后，通过CMP装置对晶片表面进行镜面整理的步骤进行平滑化。 也可以通过由CF4气体和H2气体的混合气体产生的活化物质气体喷射晶片的整个表面来执行去除天然氧化物膜的步骤，并且可以通过喷涂 通过由CF 4气体和O 2气体的混合气体产生的活化种类气体，晶片的整个表面。
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公开(公告)号：US06496748B1
公开(公告)日：2002-12-17
申请号：US09234937
申请日：1999-01-21
IPC分类号： G06F1900
CPC分类号： H01L21/67069 , H01L21/30625
摘要： A wafer flattening process designed to flatten the entire surface of the wafer including the outer rim of the wafer by inserting dummy data corresponding to the data of the outer rim of the wafer in the data of the outside of the wafer, and a storage medium for the same. An area S is set at an outside position exactly an etching radius r from an outer rim Wc of the wafer Wc ahd the nozzle relative speed at the position-speed data D of points P4-1 to P4-3 closest to an imaginary line L passing through the point P4 inside the area S near the outer rim Wc is set to be the same as the nozzle relative speed of the position-speed data D of the point P4. Due to this, the nozzle spraying the activated species gas G moves as if along the imaginary line L and the portion of the point P4 is etched flat by superposition of the activated species gas G of the nozzle passing through the points P4-1 to P4-3, the point P4, and the point P6.
摘要翻译： 一种晶片平坦化工艺，其被设计成通过将对应于晶片的外缘的数据的伪数据插入到晶片外部的数据中，将包括晶片的外边缘的晶片的整个表面平坦化，以及存储介质 一样。 区域S在外侧位置从晶片Wc的外缘Wc精确地设定为蚀刻半径r，与位于距虚拟线L最近的点P4-1〜P4-3的位置速度数据D处的喷嘴相对速度 穿过外缘Wc附近的区域S内的点P4被设定为与点P4的位置速度数据D的喷嘴相对速度相同。 由此，喷射活化物质气体G的喷嘴如同沿着假想线L移动，并且点P4的部分通过叠加穿过点P4-1至P4的喷嘴的活化种类气体G而被平坦地蚀刻 -3，点P4和点P6。
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公开(公告)号：US06316369B1
公开(公告)日：2001-11-13
申请号：US09539114
申请日：2000-03-30
IPC分类号： H01L2100
CPC分类号： H01J37/32192 , H01J37/32477
摘要： A corrosion-resistant system and method for a plasma etching apparatus are provided which are capable of reducing a corrosion or erosion phenomenon of a discharge tube, equipment and/or elements in a chamber of the plasma etching apparatus which is used for localized etching. A micro wave M is oscillated from a micro wave oscillator 20 toward a mixed gas of CF4 and O2 in a quartz discharge tube 110 to thereby produce plasma discharge. The micro wave oscillator 20 is controlled in an on-off manner by means of a pulse generator 21, to thereby oscillate a pulsed micro wave M. As a result, it is possible to reduce the erosion of the quartz discharge tube 110 caused by an active species gas G generated by the plasma discharge. Preferably, a corrosion-resistant oil A is filled in the chamber 100 for preventing an X-Y drive mechanism 130, etc., therein from being corroded or eroded by the active species gas G diffusing in the chamber 100.
摘要翻译： 提供一种用于等离子体蚀刻装置的耐腐蚀系统和方法，其能够减少用于局部蚀刻的等离子体蚀刻装置的放电管，设备和/或元件的腐蚀或侵蚀现象。 微波M在石英放电管110中从微波振荡器20向CF4和O2的混合气体振荡，从而产生等离子体放电。 微波振荡器20通过脉冲发生器21以开 - 关方式被控制，从而使脉冲微波M振荡。结果，可以减少由一个脉冲发生器21引起的石英放电管110的侵蚀 活性物质G由等离子体放电产生。 优选地，在室100中填充有耐腐蚀油A，以防止其中的X-Y驱动机构130等被在室100中扩散的活性种类气体G腐蚀或侵蚀。
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6.发明授权
公开(公告)号：US6159388A
公开(公告)日：2000-12-12
申请号：US13705
申请日：1998-01-26
IPC分类号： H05H1/46 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/67253 , H01L21/67069
摘要： Plasma etching method and apparatus for removing relatively thick portions from wafers by etching while measuring an actual etch quantity to thereby manufacture the wafers excellent in flatness quality on a mass-production basis. A conduit 20 of a plasma generator 2 is positioned above a relatively thick portion 111 of the wafer 110 to etch away a wafer material from the relatively thick portion 111 by ejecting a fluorine gas G. A laser beam L0 is emitted from a laser displacement meter 30 of a measuring apparatus 3 to detect an interference state between a reflected light beam L1 from the relatively thick portion 111 and a reflected light beam L2 form a reflecting plate 32 and count periodical changes of the interference state. When the count value m coincides with an integral value derived by dividing a desired etch quantity by a half wavelength of the laser beam L0, etching of the relatively thick portion 111 by the fluorine gas G is terminated.
摘要翻译： 等离子体蚀刻方法和装置，用于通过蚀刻在测量实际蚀刻量的同时通过蚀刻从晶片去除相对较厚的部分，从而在大规模生产的基础上制造平坦度优异的晶片。 等离子体发生器2的管道20位于晶片110的较厚部分111的上方，通过喷射氟气G从相对厚的部分111中蚀刻出晶片材料。激光束L0从激光位移计 检测来自相对较厚部分111的反射光束L1与反射光束L2之间的干涉状态的测量装置30的反射板32，并计算干涉状态的周期性变化。 当计数值m与通过将期望的蚀刻量除以激光束L0的半波长而导出的积分值一致时，终止通过氟气G蚀刻较厚部分111。
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公开(公告)号：US06254718B1
公开(公告)日：2001-07-03
申请号：US09260336
申请日：1999-03-01
IPC分类号： H05H100
CPC分类号： B24B37/04 , H01L21/306
摘要： A wafer flattening process designed to flatten the entire surface of the wafer to a higher precision by projecting the fall in the etching rate at the outer peripheral portion of the wafer and forming the outer peripheral portion of the wafer thinner in advance before plasma etching the entire surface of the wafer, a wafer flattening system, and a wafer flattened by the same. The wafer flattening system is provided with a CMP apparatus 1 and a plasma etching apparatus 2 are provided. The outer peripheral portion Wb of a wafer W held by a carrier 11 is polished thinner than an inside portion Wc of the wafer W by the CMP apparatus 1 having a platen 10 formed with a recessed surface. Specifically, it is polished so that the maximum thickness at the outer peripheral portion Wb of the wafer W becomes not more than the minimum thickness at the inside portion Wc. Suitably thereafter, the plasma etching apparatus 2 locally etches the surface Wa of the wafer W to obtain a wafer W with a high flatness without any projecting portion at the outer peripheral portion Wb.
摘要翻译： 晶片平坦化处理设计成通过在晶片的外周部分投影蚀刻速率下降并预先在等离子体刻蚀整个晶片之前预先形成晶片的外周部分，从而将晶片整个表面平坦化，从而获得更高的精度 晶片表面，晶片平整系统以及由其平坦化的晶片。 晶片压扁系统设置有CMP装置1和等离子体蚀刻装置2。 通过具有形成有凹面的台板10的CMP装置1，由载体11保持的晶片W的外周部Wb比晶片W的内部Wc薄。 具体地说，进行抛光，使晶片W的外周部Wb的最大厚度成为不大于内侧部Wc的最小厚度。 此后，适当地等离子体蚀刻装置2对晶片W的表面Wa进行局部蚀刻，从而在外周部Wb没有任何突出部分获得具有高平坦度的晶片W.
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公开(公告)号：US20100158757A1
公开(公告)日：2010-06-24
申请号：US12707399
申请日：2010-02-17
申请人： Yasuhiro Horiike , Akinori Yokogawa
发明人： Yasuhiro Horiike , Akinori Yokogawa
IPC分类号： B04B5/10
CPC分类号： B01L3/502753 , B01L3/502738 , B01L3/502746 , B01L2200/0621 , B01L2200/10 , B01L2300/0654 , B01L2300/0672 , B01L2300/0803 , B01L2300/0816 , B01L2300/0864 , B01L2300/087 , B01L2400/0409 , B01L2400/0478 , B01L2400/0683 , B01L2400/086
摘要： A measuring chip is configured for separating and measuring a target component in a sample by rotation around first and second axes of rotation. The measuring chip includes a centrifugal separation tube that centrifugally separates the target component from the sample by rotating the measuring chip around the first axis of rotation; a first holding section installed in the bottom of the centrifugal separation tube, wherein non-target components other than the target component in the sample are introduced therein by rotation around the first axis of rotation, and the first holding section holds the non-target components during rotation around the second axis of rotation; and a measuring section connected to one end of the centrifugal separation tube that measures the non-target components introduced from the centrifugal separation tube by rotation around the second axis of rotation.
摘要翻译： 测量芯片被配置为通过绕第一和第二旋转轴线旋转来分离和测量样品中的目标部件。 测量芯片包括离心分离管，其通过围绕第一旋转轴线旋转测量芯片将目标部件与样品离心分离; 安装在离心分离管的底部的第一保持部，其中，除了样品中的目标成分以外的非目标成分通过围绕第一旋转轴线的旋转导入其中，第一保持部保持非目标成分 围绕第二旋转轴旋转; 以及测量部分，其连接到离心分离管的一端，其通过围绕第二旋转轴线的旋转来测量从离心分离管引入的非目标部件。
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公开(公告)号：US07678577B2
公开(公告)日：2010-03-16
申请号：US11659599
申请日：2005-08-09
申请人： Yasuhiro Horiike , Akio Oki
发明人： Yasuhiro Horiike , Akio Oki
CPC分类号： B01L3/502753 , A61B5/150022 , A61B5/150213 , A61B5/150221 , A61B5/150389 , A61B5/150503 , A61B5/15142 , A61B5/15186 , B01L2200/14 , B01L2200/148 , B01L2300/0645 , B01L2300/0816 , B01L2300/0864 , B01L2400/0409 , G01N27/4163 , G01N35/00693 , G01N2035/00495 , Y10T436/111666
摘要： A corpuscle/plasma separating part is disposed at the lower end of the substrate, and a sensor part connected to the corpuscle/plasma separating part is disposed at the upper end of the substrate, with a calibration solution reservoir being disposed on the lower side of the sensor part, and a calibration solution waste reservoir being disposed on the upper side of the sensor part. A first centrifugal axis is located upper to the corpuscle fraction storing part and lower to the plasma fraction storing part of the corpuscle/plasma separating part, while a second centrifugal axis is located within or close to the sensor part. Conveyance and discharge of the calibration solution can be carried out by performing centrifugation around the first centrifugal axis which is distant from the sensor part at a low speed of rotation, so that the centrifugal force exerted on the sensors would be small. During the centrifuge operation at a high speed of rotation for the separation of blood corpuscles, centrifugation can be performed around the second centrifugal axis so that the centrifugal force exerted on the sensors is small. Centrifuge operation allows separation of the blood corpuscles and blood plasma, and conveyance of the blood plasma and the calibration solution, as well as certain discharge of the calibration solution from the sensors, thereby allowing precise analysis. Any damage in the sensors due to strong centrifugal force during the separation of blood corpuscles and blood plasma can be prevented.
摘要翻译： 微粒/等离子体分离部设置在基板的下端，并且连接到微粒/等离子体分离部的传感器部分设置在基板的上端，校准溶液储存器设置在基板的下侧 传感器部分和校准溶液废液储存器设置在传感器部分的上侧。 第一离心轴位于微粒分数存储部的上方，并且位于小体/等离子体分离部的等离子体部分存储部的上方，而第二离心轴位于传感器部内或靠近传感器部。 校准溶液的输送和排出可以通过围绕离开传感器部分的低速旋转的第一离心轴进行离心而进行，使得施加在传感器上的离心力将变小。 在用于分离血球的高速旋转离心机操作期间，可以围绕第二离心轴进行离心，使得施加在传感器上的离心力小。 离心机操作允许血细胞和血浆分离，血浆和校正溶液的输送，以及校准溶液从传感器中的一定排放，从而允许精确的分析。 可以防止在分离血液和血浆期间强力离心力导致的传感器损伤。
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公开(公告)号：US6155200A
公开(公告)日：2000-12-05
申请号：US109064
申请日：1998-07-02
申请人： Yasuhiro Horiike , Kohei Kawamura
发明人： Yasuhiro Horiike , Kohei Kawamura
CPC分类号： H01J37/32623 , C23C14/35 , C23C16/509 , H01J37/32678
摘要： In an ECR plasma generator, radio frequency ranging from 3 to 300 MHz is applied from a radio frequency power supply to an electrode which is provided in a chamber having an exhaust system and which serves as a shower head for gas introduction, and power is supplied to a coil provided at the outer periphery of the chamber, so as to form a magnetic field an integer number of times as large as a resonant magnetic field corresponding to the applied radio frequency, parallel with the direction of an electric field and to generate ECR plasma in an atmosphere of the supplied process gas.
摘要翻译： 在ECR等离子体发生器中，从射频电源向设置在具有排气系统的室内的电极施加3〜300MHz的射频，其作为用于气体导入的喷头，并且供电 设置在室的外周设置的线圈，以形成与施加的射频相对应的与电场方向平行的谐振磁场的整数倍的磁场，并产生ECR 在所提供的处理气体的气氛中的等离子体。
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