公开(公告)号：US20070057321A1

公开(公告)日：2007-03-15

申请号：US11516733

申请日：2006-09-07

Applicant: Shuichi Kikuchi ,  Kiyofumi Nakaya ,  Shigeaki Okawa

Inventor： Shuichi Kikuchi ,  Kiyofumi Nakaya ,  Shigeaki Okawa

IPC: H01L29/76 ,  H01L21/76

CPC classification number: H01L29/0696 ,  H01L29/0619 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/7816

Abstract: In a semiconductor device of the present invention, a MOS transistor is disposed in an elliptical shape. Linear regions in the elliptical shape are respectively used as the active regions, and round regions in the elliptical shape is used respectively as the inactive regions. In each of the inactive regions, a P type diffusion layer is formed to coincide with a round shape. Another P type diffusion layer is formed in a part of one of the inactive regions. These P type diffusion layers are formed as floating diffusion layers, are capacitively coupled to a metal layer on an insulating layer, and assume a state where predetermined potentials are respectively applied thereto. This structure makes it possible to maintain current performance of the active regions, while improving the withstand voltage characteristics in the inactive regions.

Abstract translation: 在本发明的半导体器件中，MOS晶体管被设置为椭圆形。 分别使用椭圆形状的线性区域作为有效区域，椭圆形状的圆形区域分别用作非活性区域。 在每个非活性区域中，形成P型扩散层以与圆形重合。 另一个P型扩散层形成在一个非活性区域的一部分中。 这些P型扩散层形成为浮动扩散层，电容耦合到绝缘层上的金属层，并且呈现分别施加预定电位的状态。 这种结构使得有可能保持有源区的电流性能，同时提高无源区的耐压特性。

公开(公告)号：US07127732B2

公开(公告)日：2006-10-24

申请号：US11038761

申请日：2005-01-18

Applicant: Yuji Iwaki ,  Shuichi Kikuchi ,  Teiko Hoshi ,  Naoki Inoue ,  Manabu Obata ,  Mitsuyoshi Kawaguchi

Inventor： Yuji Iwaki ,  Shuichi Kikuchi ,  Teiko Hoshi ,  Naoki Inoue ,  Manabu Obata ,  Mitsuyoshi Kawaguchi

IPC: G11B23/03

CPC classification number: G11B23/0326 ,  G11B23/0308 ,  G11B23/0316

Abstract: The present invention is related to a disc cartridge in which an optical disc, an inner shell and shutter members are housed in a main cartridge body unit, formed by abutting and combining upper and lower shells and in which the inner shell is run in rotation to cause the shutter members to open or close an aperture provided in the main cartridge body unit. The inner shell is formed by a resin molding portion comprised of a first molded portion for forming the inner shell and a second molded portion connected to the first molded portion. The second molded portion is provided at a position forming the aperture in the inner shell and is connected to the first molded portion through a flanged thin-walled section. The inner shell is formed by severing the second molded portion and the flanged thin-walled section.

Abstract translation: 本发明涉及一种盘盒，其中光盘，内壳和挡板部件容纳在主盒体单元中，该盒式盘通过抵靠并组合上壳体和下壳体而形成，并且内壳件旋转到其中 导致活门构件打开或关闭设置在主盒体单元中的孔。 内壳由树脂成型部形成，该树脂成型部包括用于形成内壳的第一模制部分和连接到第一模制部分的第二模制部分。 第二模制部分设置在形成内壳中的孔的位置处并通过凸缘的薄壁部分连接到第一模制部分。 内壳通过切断第二模制部分和带凸缘的薄壁部分而形成。

公开(公告)号：US20060220099A1

公开(公告)日：2006-10-05

申请号：US11391166

申请日：2006-03-27

Applicant: Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Toshiyuki Takahashi

Inventor： Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Toshiyuki Takahashi

IPC: H01L29/788

CPC classification number: H01L29/7816 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/41725 ,  H01L29/42368 ,  H01L29/456 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a conventional semiconductor device, there has been a problem that, in a region where a wiring layer to which a high electric potential is applied traverses a top surface of an isolation region, the withstand voltage is deteriorated. In a semiconductor device of the present invention, an epitaxial layer is deposited on a substrate, and an LDMOSFET is formed in one region divided by an isolation region. In a region where a wiring layer connected to a drain electrode traverses a top surface of the isolation region, a conductive plate having a ground electric potential and another conductive plate in a floating state are formed under the wiring layer. With this structure, electric field is reduced in the vicinity of the isolation region under the wiring layer, whereby a withstand voltage of the LDMOSFET is increased.

Abstract translation: 在现有的半导体装置中，存在如下问题：在施加高电位的布线层横越隔离区域的上表面的区域中，耐电压劣化。 在本发明的半导体器件中，在衬底上沉积外延层，并且在由隔离区域划分的一个区域中形成LDMOSFET。 在与漏电极连接的布线层穿过隔离区域的上表面的区域中，在布线层的下方形成具有接地电位的导电板和浮置状态的另一导电板。 利用这种结构，在布线层下面的隔离区附近减小了电场，从而提高了LDMOSFET的耐受电压。

公开(公告)号：US07103898B2

公开(公告)日：2006-09-05

申请号：US11038954

申请日：2005-01-18

Applicant: Yuji Iwaki ,  Shuichi Kikuchi ,  Teiko Hoshi ,  Naoki Inoue ,  Manabu Obata ,  Mitsuyoshi Kawaguchi

Inventor： Yuji Iwaki ,  Shuichi Kikuchi ,  Teiko Hoshi ,  Naoki Inoue ,  Manabu Obata ,  Mitsuyoshi Kawaguchi

IPC: G11B23/03

CPC classification number: G11B23/0326 ,  G11B23/0308 ,  G11B23/0316

Abstract: A method for producing an inner shell used for a disc cartridge in which an optical disc, an inner shell and shutter members are housed in a main cartridge body unit. The inner shell provided in the main cartridge body unit includes a first molded portion, provided with an aperture, a second molded portion having a resin injection port and molded at a position where the aperture is formed, and a flanged thin-walled section connecting the first and second molded portions to each other. The method includes the steps of injecting molten resin into a cavity defined by a fixed metal die and a movable metal die for molding the first molded portion, the second molded portion, and the flanged thin-walled section, and severing the flanged thin-walled section by a punch provided to the movable metal die before the molten resin injected into the cavity is cooled and solidified.

Abstract translation: 一种用于制造用于盘盒的内壳的方法，其中光盘，内壳和挡板部件容纳在主盒体单元中。 设置在主盒体单元中的内壳包括设置有孔的第一模制部分，具有树脂注入口的第二模制部分，并且在形成该孔的位置处模制，以及连接该壳体的凸缘薄壁部分 第一和第二模制部分彼此。 该方法包括以下步骤：将熔融树脂注入到由固定金属模具和用于模制第一模制部分，第二模制部分和带凸缘的薄壁部分的可移动金属模具限定的空腔中，并且将法兰薄壁 在注入到空腔中的熔融树脂被冷却和固化之前通过设置到可移动金属模具的冲头的截面。

公开(公告)号：US20060186477A1

公开(公告)日：2006-08-24

申请号：US11360286

申请日：2006-02-22

Applicant: Ryo Kanda ,  Shuichi Kikuchi ,  Seiji Otake

Inventor： Ryo Kanda ,  Shuichi Kikuchi ,  Seiji Otake

IPC: H01L29/76

CPC classification number: H01L29/7816 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66681

Abstract: In a conventional semiconductor device, there is a problem that an N-type diffusion region provided for protecting an element from an overvoltage is narrow and a breakdown current is concentrated so that a PN junction region for protection is broken. In a semiconductor device of the present invention, an N-type buried diffusion layer is formed across a substrate and an epitaxial layer. A P-type buried diffusion layer is formed across a wider region on an upper surface of the N-type buried diffusion layer so that a PN junction region for overvoltage protection is formed. A P-type diffusion layer is formed so as to be connected to the P-type diffusion layer. A breakdown voltage of the PN junction region is lower than a breakdown voltage between a source and a drain. With this structure, the concentration of the breakdown current is prevented so that the semiconductor device can be protected from the overvoltage.

Abstract translation: 在传统的半导体器件中，存在用于保护元件免于过电压的N型扩散区域窄并且击穿电流被集中以使得用于保护的PN结区域被破坏的问题。 在本发明的半导体器件中，在衬底和外延层上形成N型掩埋扩散层。 在N型掩埋扩散层的上表面上的较宽区域上形成P型埋入扩散层，从而形成用于过电压保护的PN结区域。 P型扩散层形成为与P型扩散层连接。 PN结区域的击穿电压低于源极和漏极之间的击穿电压。 利用这种结构，防止了击穿电流的集中，从而可以保护半导体器件免受过电压。

公开(公告)号：US07087961B2

公开(公告)日：2006-08-08

申请号：US10651855

申请日：2003-08-29

Applicant: Shuichi Kikuchi ,  Eiji Nishibe

Inventor： Shuichi Kikuchi ,  Eiji Nishibe

IPC: H01L29/76

CPC classification number: H01L29/66659 ,  H01L21/823462 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/42368 ,  H01L29/7835

Abstract: To enable the reduction of ON-state resistance in a state in which the withstand voltage is secured, a semiconductor device according to the invention is provided with a gate electrode formed so that the gate electrode ranges from a gate oxide film formed on an N-type well region formed in a P-type semiconductor substrate to a selective oxide film, a P-type source region formed so that the source region is adjacent to the gate electrode, a P-type drain region formed in a position apart from the gate electrode and a P-type drift region (an LP layer) formed so that the drift region surrounds the drain region, and is characterized in that a P-type impurities layer (an FP layer) is formed so that the impurities layer is adjacent to the drain region.

Abstract translation: 为了在确保耐电压的状态下能够降低导通电阻，根据本发明的半导体器件设置有栅电极，栅电极形成为栅极电极的范围从形成在N- 形成在P型半导体衬底中的选择性氧化膜的P型阱区，形成为使得源极区与栅电极相邻的P型源极区，形成在与栅极隔开的位置的P型漏极区 电极和形成为漂移区域围绕漏极区域的P型漂移区域（LP层），其特征在于，形成P型杂质层（FP层），使得杂质层与 漏极区域。

公开(公告)号：US06963109B2

公开(公告)日：2005-11-08

申请号：US09943667

申请日：2001-08-31

Applicant: Shuichi Kikuchi ,  Eiji Nishibe

Inventor： Shuichi Kikuchi ,  Eiji Nishibe

IPC: H01L29/78 ,  H01L21/22 ,  H01L21/265 ,  H01L21/336 ,  H01L21/425 ,  H01L29/08 ,  H01L29/423 ,  H01L29/76 ,  H01L29/80

CPC classification number: H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

Abstract: A semiconductor device has a gate electrode formed on a P type semiconductor substrate via gate oxide films. A first low concentration (LN type) drain region is made adjacent to one end of the gate electrode. A second low concentration (SLN type) drain region is formed in the first tow concentration drain region so that the second low concentration drain region is very close to the outer boundary of the second low concentration drain region and has at least a higher impurity concentration than the first low concentration drain region. A high concentration (N+ type) source region is formed adjacent to the other end of said gate electrode, and a high concentration (N+ type) drain region is formed in the second low concentration drain region having the designated space from one end of the gate electrode.

Abstract translation: 半导体器件具有通过栅极氧化膜在P型半导体衬底上形成的栅电极。 第一低浓度（LN型）漏极区域与栅电极的一端相邻。 第一低浓度漏极区域形成第二低浓度（SLN型）漏极区域，使得第二低浓度漏极区域非常接近第二低浓度漏极区域的外边界，并且至少具有比 第一个低浓度排放区域。 在所述栅电极的另一端附近形成高浓度（N +型）源极区，并且在从栅极的一端开始的具有指定空间的第二低浓度漏区形成高浓度（N +型）漏区 电极。

公开(公告)号：US20050061902A1

公开(公告)日：2005-03-24

申请号：US10494229

申请日：2002-10-31

Applicant: Takaaki Sanpei ,  Shuichi Kikuchi ,  Kazuo Sasaki ,  Mitsue Sakurai ,  Toshiya Kurokawa ,  Katsumi Maekawa ,  Hitomi Chiba

Inventor： Takaaki Sanpei ,  Shuichi Kikuchi ,  Kazuo Sasaki ,  Mitsue Sakurai ,  Toshiya Kurokawa ,  Katsumi Maekawa ,  Hitomi Chiba

IPC: G11B15/67 ,  G11B23/037 ,  G11B23/04 ,  G11B23/107 ,  G11B23/26

CPC classification number: G11B23/107 ,  G11B15/67 ,  G11B23/037 ,  G11B23/043 ,  G11B23/044 ,  G11B23/048 ,  G11B23/26

Abstract: A tape reel in which the reliability while running a magnetic tape at high speed is improved and a tape cartridge including the same. By configuring an annular chucking gear (152b) formed in a center section of a bottom surface of a lower flange (152) of a tape reel (150) with a perpendicular wall, idling and floating of the tape reel is suppressed, and thus, the running stability and linearity of the magnetic tape during high-speed rotation of the tape reel (150) are secured, and the reliability of the tape cartridge with regard to high speed operations is improved.

Abstract translation: 其中提高了高速运行磁带时的可靠性的带卷盘和包括该磁带的带盒。 通过在带状卷轴（150）的下部凸缘（152）的底面的中央部形成有环状的夹紧齿轮（152b），通过配置垂直壁，能够抑制带卷盘的空转和浮动， 固定磁带卷盘（150）的高速旋转期间的磁带的运行稳定性和线性度，并提高带盒相对于高速运行的可靠性。

公开(公告)号：US06560193B2

公开(公告)日：2003-05-06

申请号：US09799294

申请日：2001-03-05

Applicant: Shuichi Kikuchi ,  Rie Izu

Inventor： Shuichi Kikuchi ,  Rie Izu

IPC: G11B2303

CPC classification number: G11B23/0311 ,  G11B23/0308 ,  G11B23/0316

Abstract: To provide a new shutter open/close mechanism (26) suitable for use with a cartridge body whose front end is formed in an arbitrary shape for easily knowing a correct direction of insertion in a recorder/player, a guide recess (36) to support a shutter plate (25) movably is formed on a main side of the cartridge body (6) to be oblique relative to the width of the cartridge body (6). The shutter open/close mechanism (26) includes a guide member (31) supporting the shutter plate (25) and movably engaged in the guide recess (36), an operating member (32) to move the guide member (31), a transmission member (33) connecting the guide member (31) and operating member (32) to each other to transmit an operating force from the operating member (32) to the guide member (31), and support surfaces (37) formed on the cartridge body (6) to support the operating member (32) movably. The shutter open/close mechanism 26 further includes a shutter locking mechanism 38 disposed at the lateral side of the cartridge body (6) to lock the shutter plate (25) against movement.

Abstract translation: 为了提供一种新的快门打开/关闭机构（26），其适用于盒体，其前端形成为任意形状，以容易地知道在记录器/播放器中插入的正确方向;引导凹部（36），以支撑 活动板（25）可移动地形成在盒体（6）的主侧上，以相对于盒体（6）的宽度倾斜。 挡板打开/关闭机构（26）包括支撑挡板（25）并且可移动地接合在引导凹槽（36）中的引导构件（31），用于移动引导构件（31）的操作构件（32） 将引导构件（31）与操作构件（32）相互连接的传动构件（33）将作用力从操作构件（32）传递到引导构件（31）;以及支撑面（37） 盒主体（6）可移动地支撑操作构件（32）。 快门打开/关闭机构26还包括设置在盒主体（6）的侧面处以防止快门板（25）移动的快门锁定机构38。

公开(公告)号：US06482279B2

公开(公告)日：2002-11-19

申请号：US09811896

申请日：2001-03-19

Applicant: Jun Nakano ,  Shuichi Kikuchi

Inventor： Jun Nakano ,  Shuichi Kikuchi

IPC: B32B3116

CPC classification number: B29C59/02 ,  B29C35/0261 ,  B29C59/002 ,  B29C65/08 ,  B29C66/0044 ,  B29C66/7392 ,  B29C66/81429 ,  B29C66/81431 ,  B29C66/8322 ,  B29C66/9512 ,  B29C66/9513 ,  B29C66/9516 ,  B29C66/9517 ,  B29C2059/023 ,  B29D17/005 ,  B29L2017/005 ,  Y10T156/1039

Abstract: In the manufacturing process of recording media by transcribing information signals formed on a stamper onto the substrate, high-quality transcriptions must be achieved without causing any thermal deformations or warps. To this end, when the convexconcaves formed on a main surface of the stamper representing information signals are transcribed onto the substrate, a main surface of said substrate and a main surface of said stamper where the convexconcaves are formed are brought into contact facing each other, and said substrate and said stamper are pressurized with a prescribed pressure as they remain in contact, and in addition the temperature of only the contact surface layer of said substrate with said stamper is raised.