公开(公告)号：US07333303B2

公开(公告)日：2008-02-19

申请号：US11023505

申请日：2004-12-29

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Kenji Inage

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Kenji Inage

IPC分类号： G11B5/39

CPC分类号： G11B5/3903

摘要： Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including a fixing layer made of IrMn, an outer pinned layer of which the magnetization direction is fixed in a +Y direction by the fixing layer, and an inner pinned layer of which the magnetization direction is fixed in a −Y direction by the fixing layer, a pair of conductive lead layers and a constant current circuit which flows a sense current in a +X direction so as to generate a current magnetic field toward a −Y direction in the inner pinned layer, and in the magnetoresistive device, a conditional expression (1) is satisfied. Thereby, the magnetization directions of the outer pinned layer and the inner pinned layer can be stabilized, so even under a high temperature environment, the magnetoresistive device can obtain stable output characteristics, and can respond to a demand for a higher recording density.

摘要翻译： 提供了一种即使在较高温度环境下也能够稳定地保持足够的输出特性并且响应于更高记录密度的需求的磁阻器件。 磁阻器件包括MR膜，其包括由IrMn制成的固定层，通过固定层将磁化方向固定在+ Y方向上的外部钉扎层，以及将磁化方向固定在其中的内部钉扎层 -Y方向，一对导电引线层和恒流电路，其在+ X方向上流过感测电流，以便在内部被钉扎层中朝向-Y方向产生电流磁场，并且在 磁阻器件，条件式（1）被满足。 由此，外部被钉扎层和内部被钉扎层的磁化方向可以稳定，因此即使在高温环境下，磁阻器件也能够得到稳定的输出特性，能够满足更高记录密度的要求。

公开(公告)号：US06433540B1

公开(公告)日：2002-08-13

申请号：US09488559

申请日：2000-01-21

申请人： Nozomu Hachisuka ,  Kenji Inage ,  Toshiaki Maeda

发明人： Nozomu Hachisuka ,  Kenji Inage ,  Toshiaki Maeda

IPC分类号： G01R3312

CPC分类号： G11B5/3166 ,  G11B5/455 ,  G11B2005/0016

摘要： A method for testing a composite type magnetic head having a MR element and an inductive element includes a current application step of applying a current to the inductive element, with applying no external magnetic field to the magnetic head, and a measurement step of measuring output characteristics of the MR element after the current application step is finished.

摘要翻译： 一种用于测试具有MR元件和电感元件的复合型磁头的方法包括：向电感元件施加电流的电流施加步骤，不向磁头施加外部磁场;以及测量步骤，测量输出特性 在当前应用步骤完成之后的MR元件。

公开(公告)号：US06340885B1

公开(公告)日：2002-01-22

申请号：US09196442

申请日：1998-11-20

申请人： Nozomu Hachisuka ,  Toshiaki Maeda ,  Kenji Inage

发明人： Nozomu Hachisuka ,  Toshiaki Maeda ,  Kenji Inage

IPC分类号： G01R3312

CPC分类号： G11B5/3173 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/455 ,  G11B2005/0008 ,  G11B2005/0013

摘要： A current which will change an initial magnetization state of a shield layer for a MR element is applied to an inductive element, and output characteristics of the MR element is measured.

摘要翻译： 将将用于MR元件的屏蔽层的初始磁化状态改变的电流施加到电感元件，并测量MR元件的输出特性。

公开(公告)号：US6163437A

公开(公告)日：2000-12-19

申请号：US44886

申请日：1998-03-20

申请人： Kenji Inage ,  Toshiaki Maeda ,  Jun Shouji ,  Koichi Terunuma ,  Masanori Sakai

发明人： Kenji Inage ,  Toshiaki Maeda ,  Jun Shouji ,  Koichi Terunuma ,  Masanori Sakai

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/40 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/40 ,  G11B2005/3996

摘要： A magnetic head with a spin valve effect MR element and a method of manufacturing the head. A plurality of spin valve effect MR elements on a substrate are formed, a plurality of pairs of lead conductors connected with the respective spin valve effect MR elements on the substrate are formed, and then a plurality of protection circuits of magnetization inversion connected between the respective pairs of lead conductors on the substrate are formed. Each of the protection circuits is constituted so as to turn on when it receives an energy with a level at which the pinned direction inversion in each of the spin valve effect MR elements occurs.

摘要翻译： 具有旋转阀效应MR元件的磁头和制造头部的方法。 在衬底上形成多个自旋阀效应MR元件，形成多个与各个自旋阀连接的引导导体，在衬底上形成MR元件，然后将多个磁化反转保护电路连接在相应的 形成基板上的导体导体对。 每个保护电路被构造成当其接收到具有在每个自旋阀效应MR元件中发生销钉方向反转的水平的能量时接通能量。

公开(公告)号：US07417442B2

公开(公告)日：2008-08-26

申请号：US11130258

申请日：2005-05-17

申请人： Nozomu Hachisuka ,  Kenji Inage ,  Norio Takahashi ,  Tatsushi Shimizu ,  Pak Kin Wong

发明人： Nozomu Hachisuka ,  Kenji Inage ,  Norio Takahashi ,  Tatsushi Shimizu ,  Pak Kin Wong

IPC分类号： G01R27/08 ,  H01L21/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/455 ,  Y10T29/49021

摘要： A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by feeding a plurality of sense currents with different current values each other through the TMR element, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.

摘要翻译： 用于测试TMR元件的方法包括通过通过TMR元件馈送具有不同电流值的多个感测电流来测量TMR元件的多个电阻的步骤，计算电阻变化率 测量TMR元件的多个电阻，以及使用所计算的电阻变化比来评估TMR元件的步骤。

公开(公告)号：US5998993A

公开(公告)日：1999-12-07

申请号：US35946

申请日：1998-03-06

申请人： Kenji Inage ,  Nozomu Hachisuka ,  Masanori Sakai

发明人： Kenji Inage ,  Nozomu Hachisuka ,  Masanori Sakai

IPC分类号： G11B5/00 ,  G11B5/31 ,  G11B5/39 ,  G11B5/455 ,  G01R33/12 ,  G01N27/72

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/455 ,  G11B2005/0008 ,  G11B2005/3996 ,  G11B5/3189

摘要： A method of testing a magnetic head with a spin-valve MR element which includes at least a pinned layer, a free layer and a non-magnetic layer for magnetically separating the pinned layer and the free layer. The method includes a step of measuring an output voltage of the spin-valve MR element under application of an external alternating magnetic field to the magnetic head in a direction parallel to a magnetization direction of the pinned layer, a step of obtaining a .rho.-H loop characteristics of the spin-valve MR element from the measured output voltage, and a step of judging pinned direction of the spin-valve MR element in accordance with a polarity of an inclination of the obtained .rho.-H loop characteristics.

摘要翻译： 一种用自旋阀MR元件测试磁头的方法，该磁头至少包括被钉扎层，自由层和非磁性层，用于磁性分离被钉扎层和自由层。 该方法包括在与被钉扎层的磁化方向平行的方向上向磁头施加外部交变磁场的情况下测量自旋阀MR元件的输出电压的步骤，获得rho -H 根据所测量的输出电压，自旋阀MR元件的回路特性，以及根据获得的rho -H回路特性的倾斜极性来判断自旋阀MR元件的钉扎方向的步骤。

公开(公告)号：US20060028773A1

公开(公告)日：2006-02-09

申请号：US11023505

申请日：2004-12-29

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Kenji Inage

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Kenji Inage

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3903

摘要： Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including a fixing layer made of IrMn, an outer pinned layer of which the magnetization direction is fixed in a +Y direction by the fixing layer, and an inner pinned layer of which the magnetization direction is fixed in a −Y direction by the fixing layer, a pair of conductive lead layers and a constant current circuit which flows a sense current in a +X direction so as to generate a current magnetic field toward a −Y direction in the inner pinned layer, and in the magnetoresistive device, a conditional expression (1) is satisfied. Thereby, the magnetization directions of the outer pinned layer and the inner pinned layer can be stabilized, so even under a high temperature environment, the magnetoresistive device can obtain stable output characteristics, and can respond to a demand for a higher recording density.

摘要翻译： 提供了一种即使在较高温度环境下也能够稳定地保持足够的输出特性并且响应于更高记录密度的需求的磁阻器件。 磁阻器件包括MR膜，其包括由IrMn制成的固定层，通过固定层将磁化方向固定在+ Y方向上的外部钉扎层，以及将磁化方向固定在其中的内部钉扎层 -Y方向，一对导电引线层和恒流电路，其在+ X方向上流过感测电流，以便在内部被钉扎层中朝向-Y方向产生电流磁场，并且在 磁阻器件，条件式（1）被满足。 由此，外部被钉扎层和内部被钉扎层的磁化方向可以稳定，因此即使在高温环境下，磁阻器件也能够得到稳定的输出特性，能够满足更高记录密度的要求。

公开(公告)号：US06194896B1

公开(公告)日：2001-02-27

申请号：US09291376

申请日：1999-04-14

申请人： Masato Takahashi ,  Toshiaki Maeda ,  Kenji Inage

发明人： Masato Takahashi ,  Toshiaki Maeda ,  Kenji Inage

IPC分类号： G01R3302

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/0008 ,  H01F10/3268 ,  H01F41/304

摘要： A method of controlling magnetic characteristics of a MR element and a method of controlling magnetic characteristics of a magnetic head with the MR element utilizing exchange coupling magnetization, include a step of supplying discrete rectangular waveform currents or a rectangular waveform current to the MR element so as to generate magnetic field in a desired direction and to generate joule heat, the generated magnetic field and the generated joule heat being applied to the MR element, and a step of controlling a duty ratio of the discrete rectangular waveform currents or a time constant of the falling of the rectangular waveform current so that a temperature of the MR element is controlled under a desired temperature change characteristics, whereby a magnetization direction caused by the exchange coupling in the MR element is aligned to a desired direction.

摘要翻译： 控制MR元件的磁特性的方法和利用MR元件利用交换耦合磁化来控制磁头的磁特性的方法包括向MR元件提供离散矩形波形电流或矩形波形电流的步骤，以便 在期望的方向上产生磁场并产生焦耳热，所产生的磁场和产生的焦耳热被施加到MR元件，以及控制离散矩形波形电流的占空比或者 矩形波形电流的下降使得MR元件的温度被控制在期望的温度变化特性下，由此由MR元件中的交换耦合引起的磁化方向与期望的方向对准。

公开(公告)号：US07283328B2

公开(公告)日：2007-10-16

申请号：US11113973

申请日：2005-04-26

申请人： Norikazu Ota ,  Kenji Inage ,  Taro Oike

发明人： Norikazu Ota ,  Kenji Inage ,  Taro Oike

IPC分类号： G11B21/02 ,  G11B5/56 ,  G11B5/10

CPC分类号： G11B5/3136 ,  G11B5/314 ,  G11B5/4826 ,  G11B5/6064

摘要： A thin-film magnetic head includes at least one inductive write head element and at least one read magnetic head element, capable of controlling a spacing between a magnetic recording medium and the at least one magnetic read head element by heating. A gain SG (nm/° C.) of the spacing is greater than a spacing gain threshold SGTHLD (nm/° C.) defined by the following expression: SGLIMT=A*dPTP+B A=1.4642E−02*exp(−6.6769E−05*LRDMF) B=4.9602E−01*exp(−2.0423E−03*LRDMF) where dPTP represents an amount of change in protrusion (nm) of a top end of the at least one inductive write head element and/or the at least one read magnetic head element by heating, and LRDMF represents a line recording density (kFCI) at a frequency half of the maximum recording frequency.

摘要翻译： 薄膜磁头包括至少一个感应写头元件和至少一个读磁头元件，能够通过加热来控制磁记录介质和至少一个磁读头元件之间的间隔。 间隔的增益SG（nm /℃）大于由以下表达式定义的间隔增益阈值SG （nm /℃）：<？在线公式描述 =“直线公式”end =“lead”？> SG _{LIMT = A * dPTP + B <？in-line-formula description =“In-line Formulas”end =“tail”？ > A = 1.4642E-02 * exp（-6.6769E-05 * LRD MF）B = 4.9602E-01 * exp（-2.0423E-03 * LRD MF MF ）其中dPTP表示通过加热至少一个感应写入头元件和/或至少一个读磁头元件的顶端的突起（nm）的变化量，并且LRD < 表示在最大记录频率的一半频率处的行记录密度（kFCI）。}

公开(公告)号：US07027271B2

公开(公告)日：2006-04-11

申请号：US09911408

申请日：2001-07-25

申请人： Kenji Inage ,  Yoshihiro Kudo ,  Ken-ichi Takano ,  Koichi Terunuma ,  Yuzuru Iwai

发明人： Kenji Inage ,  Yoshihiro Kudo ,  Ken-ichi Takano ,  Koichi Terunuma ,  Yuzuru Iwai

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08

摘要： A magnetoresisive device comprises an MR element, bias field applying layers located adjacent to the side portions of the MR element, and two electrode layers that feed a sense current to the MR element. The electrode layers overlap one of the surfaces of the MR element. The total overlap amount of the two electrode layers is smaller than 0.3 μm. The MR element is a spin-valve GMR element. The MR element incorporates a base layer, a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a cap layer that are stacked in this order. The pinned layer includes a nonmagnetic spacer layer, and two ferromagnetic layers that sandwich this spacer layer.

摘要翻译： 磁感应装置包括MR元件，邻近MR元件的侧部定位的偏置场施加层和向MR元件馈送感测电流的两个电极层。 电极层与MR元件的一个表面重叠。 两个电极层的总重叠量小于0.3μm。 MR元件是自旋阀GMR元件。 MR元件包括依次层叠的基底层，自由层，间隔层，钉扎层，反铁磁层和盖层。 被钉扎层包括非磁性间隔层和夹住该间隔层的两个铁磁层。