公开(公告)号：US20110062992A1

公开(公告)日：2011-03-17

申请号：US12880312

申请日：2010-09-13

申请人： Kenichi OKAZAKI ,  Yoshiaki OIKAWA ,  Hotaka MARUYAMA ,  Hiromichi GODO ,  Shunpei YAMAZAKI

发明人： Kenichi OKAZAKI ,  Yoshiaki OIKAWA ,  Hotaka MARUYAMA ,  Hiromichi GODO ,  Shunpei YAMAZAKI

IPC分类号： H01L25/00

CPC分类号： H01L27/1233 ,  H01L27/0207 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288

摘要： An object is to obtain a desired threshold voltage of a thin film transistor using an oxide semiconductor. Another object is to suppress a change of the threshold voltage over time. Specifically, an object is to apply the thin film transistor to a logic circuit formed using a transistor having a desired threshold voltage. In order to achieve the above object, thin film transistors including oxide semiconductor layers with different thicknesses may be formed over the same substrate, and the thin film transistors whose threshold voltages are controlled by the thicknesses of the oxide semiconductor layers may be used to form a logic circuit. In addition, by using an oxide semiconductor film in contact with an oxide insulating film formed after dehydration or dehydrogenation treatment, a change in threshold voltage over time is suppressed and the reliability of a logic circuit can be improved.

摘要翻译： 目的是获得使用氧化物半导体的薄膜晶体管的期望阈值电压。 另一个目的是抑制阈值电压随时间的变化。 具体地，目的是将薄膜晶体管施加到使用具有期望阈值电压的晶体管形成的逻辑电路。 为了实现上述目的，可以在相同的衬底上形成包括具有不同厚度的氧化物半导体层的薄膜晶体管，并且其阈值电压由氧化物半导体层的厚度控制的薄膜晶体管可以用于形成 逻辑电路。 此外，通过使用与脱水或脱氢处理之后形成的氧化物绝缘膜接触的氧化物半导体膜，抑制了阈值电压随时间的变化，并且可以提高逻辑电路的可靠性。

公开(公告)号：US20110024740A1

公开(公告)日：2011-02-03

申请号：US12846572

申请日：2010-07-29

申请人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L29/7869

摘要： A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.

摘要翻译： 提供具有能够充分降低寄生电容的结构的半导体器件。 此外，提高了驱动电路中薄膜晶体管的操作速度。 在其中氧化物绝缘层与氧化物半导体层中的沟道形成区域接触的底栅极薄膜晶体管中，以与栅极薄膜晶体管不重叠的方式形成源电极层和漏电极层， 栅电极层。 因此，栅极电极层与源电极层之间以及栅极电极层和漏极电极层之间的距离增加; 因此，可以减小寄生电容。

公开(公告)号：US20110057186A1

公开(公告)日：2011-03-10

申请号：US12869278

申请日：2010-08-26

申请人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

发明人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC分类号： H01L29/786

CPC分类号： H01L27/1225 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

摘要： It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

摘要翻译： 本发明的目的是制造使用具有良好的电特性和高可靠性的薄膜晶体管作为开关元件的高度可靠的显示装置。 在包括非晶氧化物半导体的底栅薄膜晶体管中，在已经通过热处理脱水或脱氢的氧化物半导体层与源电极层和漏电极层中的每一个之间形成具有晶体区的氧化物导电层， 使用金属材料形成。 因此，可以减小氧化物半导体层与源极电极层和漏极电极层中的每一个之间的接触电阻; 因此，可以提供具有良好电特性的薄膜晶体管和使用该薄膜晶体管的高度可靠的显示装置。

公开(公告)号：US20100200851A1

公开(公告)日：2010-08-12

申请号：US12695179

申请日：2010-01-28

申请人： Yoshiaki OIKAWA ,  Hotaka MARUYAMA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Shunpei YAMAZAKI

发明人： Yoshiaki OIKAWA ,  Hotaka MARUYAMA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L33/00 ,  H01L21/34 ,  H01L21/44

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/156 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.

摘要翻译： 本发明的目的是提供一种具有使用氧化物半导体层的具有优异电特性的薄膜晶体管的半导体器件。 包括SiOX的In-Sn-O系氧化物半导体层用于沟道形成区域。 为了降低包含SiOX的In-Sn-O系氧化物半导体层与由电阻低的金属材料形成的布线层之间的接触电阻，在源电极层或漏电极之间形成源极区或漏极区 层和包含SiOX的In-Sn-O系氧化物半导体层。 使用不包含SiOX的In-Sn-O系氧化物半导体层来形成源极区域或漏极区域以及像素区域。

公开(公告)号：US20120214276A1

公开(公告)日：2012-08-23

申请号：US13455425

申请日：2012-04-25

申请人： Yoshiaki OIKAWA ,  Hotaka MARUYAMA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Shunpei YAMAZAKI

发明人： Yoshiaki OIKAWA ,  Hotaka MARUYAMA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Shunpei YAMAZAKI

IPC分类号： H01L21/363

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/156 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.

摘要翻译： 本发明的目的是提供一种具有使用氧化物半导体层的具有优异电特性的薄膜晶体管的半导体器件。 包括SiOX的In-Sn-O系氧化物半导体层用于沟道形成区域。 为了降低包含SiOX的In-Sn-O系氧化物半导体层与由电阻低的金属材料形成的布线层之间的接触电阻，在源电极层或漏电极之间形成源极区或漏极区 层和包含SiOX的In-Sn-O系氧化物半导体层。 使用不包含SiOX的In-Sn-O系氧化物半导体层来形成源极区域或漏极区域以及像素区域。

公开(公告)号：US20110151618A1

公开(公告)日：2011-06-23

申请号：US12968331

申请日：2010-12-15

申请人： Shunpei YAMAZAKI ,  Hotaka MARUYAMA ,  Yoshiaki OIKAWA ,  Katsuaki TOCHIBAYASHI

发明人： Shunpei YAMAZAKI ,  Hotaka MARUYAMA ,  Yoshiaki OIKAWA ,  Katsuaki TOCHIBAYASHI

IPC分类号： H01L21/34

CPC分类号： H01L27/1225 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/28185 ,  H01L27/1229 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869

摘要： An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over the first oxide semiconductor layer. By second heat treatment, an oxide semiconductor layer including a crystal region having the c-axis oriented substantially perpendicular to a surface is efficiently formed and oxygen vacancies are efficiently filled. An oxide insulating layer is formed over and in contact with the oxide semiconductor layer. By third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer. By fourth heat treatment, hydrogen is supplied at least to an interface between the second oxide semiconductor layer and the oxide insulating layer.

摘要翻译： 形成具有优异结晶度的氧化物半导体层，以便制造具有优异的电特性的晶体管，用于实际应用大型显示器件，高性能半导体器件等。通过第一热处理，第一氧化物半导体层被结晶。 在第一氧化物半导体层上形成第二氧化物半导体层。 通过第二热处理，有效地形成包括具有取向为基本上垂直于表面的c轴的晶体区域的氧化物半导体层，并且有效地填充氧空位。 氧化物绝缘层形成在氧化物半导体层上并与氧化物半导体层接触。 通过第三次热处理，再次向氧化物半导体层供给氧。 在氧化物绝缘层上形成含有氢的氮化物绝缘层。 通过第四热处理，至少向第二氧化物半导体层和氧化物绝缘层之间的界面供应氢。

公开(公告)号：US20120256179A1

公开(公告)日：2012-10-11

申请号：US13528009

申请日：2012-06-20

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

摘要翻译： 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。 此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

公开(公告)号：US20110121289A1

公开(公告)日：2011-05-26

申请号：US12950186

申请日：2010-11-19

申请人： Akiharu MIYANAGA ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Shunpei YAMAZAKI

发明人： Akiharu MIYANAGA ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/10 ,  H01L29/41733

摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US20110070693A1

公开(公告)日：2011-03-24

申请号：US12888846

申请日：2010-09-23

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Akiharu MIYANAGA ,  Masayuki SAKAKURA ,  Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Akiharu MIYANAGA ,  Masayuki SAKAKURA ,  Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

IPC分类号： H01L21/34 ,  C23C14/34

CPC分类号： H01L29/66742 ,  C23C14/086 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

摘要翻译： 目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。 通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。 在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。 当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。 因此，可以使氧化物半导体膜稳定。

公开(公告)号：US20110068336A1

公开(公告)日：2011-03-24

申请号：US12888835

申请日：2010-09-23

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Akiharu MIYANAGA ,  Masayuki SAKAKURA ,  Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Akiharu MIYANAGA ,  Masayuki SAKAKURA ,  Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

IPC分类号： H01L29/26 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

摘要翻译： 目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。 可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。 可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。 与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。