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11 条记录 (耗时 0.035 秒)

    TRANSISTOR AND DISPLAY DEVICE
    1.
    发明申请
    TRANSISTOR AND DISPLAY DEVICE 审中-公开
    晶体管和显示器件

    公开(公告)号：US20110062436A1

    公开(公告)日：2011-03-17

    申请号：US12880343

    申请日：2010-09-13

    申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

    发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

    IPC分类号： H01L29/12

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

    摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

    摘要翻译： 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。 此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

    TRANSISTOR AND DISPLAY DEVICE
    2.
    发明申请
    TRANSISTOR AND DISPLAY DEVICE 审中-公开
    晶体管和显示器件

    公开(公告)号：US20120256179A1

    公开(公告)日：2012-10-11

    申请号：US13528009

    申请日：2012-06-20

    申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

    发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

    摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

    摘要翻译： 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。 此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20110204362A1

    公开(公告)日：2011-08-25

    申请号：US13026518

    申请日：2011-02-14

    申请人： Kengo AKIMOTO ,  Ryosuke WATANABE ,  Masashi TSUBUKU ,  Shunpei YAMAZAKI

    发明人： Kengo AKIMOTO ,  Ryosuke WATANABE ,  Masashi TSUBUKU ,  Shunpei YAMAZAKI

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618

    摘要： It is an object to provide a semiconductor device including an oxide semiconductor, in which miniaturization of a transistor is achieved and the concentration of an electric field is relieved. The width of a gate electrode is reduced and a space between a source electrode layer and a drain electrode layer is shortened. By adding a rare gas in a self-alignment manner with the use of a gate electrode as a mask, a low-resistance region in contact with a channel formation region can be provided in an oxide semiconductor layer. Accordingly, even when the width of the gate electrode, that is, the line width of a gate wiring is small, the low-resistance region can be provided with high positional accuracy, so that miniaturization of a transistor can be realized.

    摘要翻译： 本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了晶体管的小型化和电场的集中。 栅电极的宽度减小，源电极层和漏电极层之间的间隔缩短。 通过使用栅电极作为掩模以自对准的方式添加稀有气体，可以在氧化物半导体层中提供与沟道形成区域接触的低电阻区域。 因此，即使栅电极的宽度，即栅极配线的线宽小，也能够提供高电位区域的高位置精度，能够实现晶体管的小型化。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20110287591A1

    公开(公告)日：2011-11-24

    申请号：US13110314

    申请日：2011-05-18

    申请人： Shunpei YAMAZAKI ,  Ryosuke WATANABE ,  Suzunosuke HIRAISHI ,  Junichiro SAKATA

    发明人： Shunpei YAMAZAKI ,  Ryosuke WATANABE ,  Suzunosuke HIRAISHI ,  Junichiro SAKATA

    IPC分类号： H01L21/336 ,  H01L21/20

    CPC分类号： H01L21/477 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

    摘要： An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.

    摘要翻译： 目的在于提供一种具有稳定的电气特性和高可靠性的氧化物半导体的半导体装置。 在包括氧化物半导体层的底栅晶体管的制造工艺中，在氧化物气氛中进行热处理，在真空中进行热处理，依次进行氧化物半导体层的脱水或脱氢。 此外，与热处理同时进行具有短波长的光的照射，由此促进氢，OH等的消除。 包括通过这种热处理进行脱水或脱氢处理的氧化物半导体层的晶体管具有改善的稳定性，从而抑制了由于光照射或偏压温度应力（BT）测试而导致的晶体管的电特性的变化。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    7.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20110183470A1

    公开(公告)日：2011-07-28

    申请号：US13053242

    申请日：2011-03-22

    申请人： Ryosuke WATANABE

    发明人： Ryosuke WATANABE

    IPC分类号： H01L21/50

    CPC分类号： H01L27/1266 ,  H01L24/97 ,  H01L27/1285 ,  H01L27/1292 ,  H01L51/56 ,  H01L2924/14 ,  H01L2924/00

    摘要： It is an object of the present invention to provide a manufacturing method of a semiconductor device where a semiconductor element is prevented from being damaged and throughput speed thereof is improved, even in a case of thinning or removing a supporting substrate after forming the semiconductor element over the supporting substrate. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of forming a plurality of element groups over an upper surface of a substrate; forming an insulating film so as to cover the plurality of element groups; selectively forming an opening to the insulating film which is located in a region between neighboring two element groups in the plurality of element groups to expose the substrate; forming a first film so as to cover the insulating film and the opening; exposing the element groups by removing the substrate; forming a second film so as to cover the surface of the exposed element groups; and cutting off between the plurality of element groups so as not to expose the insulating film.

    摘要翻译： 本发明的目的是提供一种半导体器件的制造方法，即使在形成半导体元件之后，在使半导体元件变薄或去除支撑基板的情况下，也可以防止半导体元件受到损坏并且其吞吐速度得到改善 支撑基板。 根据本发明的一个特征，一种制造半导体器件的方法包括以下步骤：在衬底的上表面上形成多个元件组; 形成绝缘膜以覆盖所述多个元件组; 选择性地形成位于所述多个元件组中相邻的两个元件组之间的区域中的绝缘膜的开口以露出所述衬底; 形成第一膜以覆盖绝缘膜和开口; 通过去除衬底暴露元件组; 形成第二膜以覆盖暴露的元件组的表面; 并且在多个元件组之间切断以便不暴露绝缘膜。

    TRANSMITTER
    8.
    发明申请
    TRANSMITTER 有权
    发射机

    公开(公告)号：US20110075756A1

    公开(公告)日：2011-03-31

    申请号：US12890732

    申请日：2010-09-27

    申请人： Ryosuke WATANABE

    发明人： Ryosuke WATANABE

    IPC分类号： H04L27/28

    CPC分类号： H04L27/2607 ,  H04L27/2626

    摘要： A transmitter includes an OFDM symbol generator for generating an effective symbol including a plurality of sub-carriers orthogonal to each other in frequency and sequentially generating an OFDM symbol in which a signal in a first period from a first end of the effective symbol is added to a second end of the effective symbol as a guard interval, and a convolution filter for performing an convolution operation on data strings at a plurality of sampling points of the OFDM symbol, wherein when the convolution filter performs a convolution operation on the first data strings including a data string at the first end of the effective symbol, the convolution filter performs the convolution operation on the first data strings in which a data string at the second end of the effective symbol is cyclically added to a data string at the first end.

    摘要翻译： 发射机包括：OFDM符号发生器，用于生成包括频率彼此正交的多个子载波的有效符号，并且顺序地生成OFDM符号，其中从有效符号的第一个末尾起的第一周期中的信号被加到 所述有效符号的第二端作为保护间隔，以及卷积滤波器，用于对所述OFDM符号的多个采样点处的数据串进行卷积运算，其中当所述卷积滤波器对所述第一数据串进行卷积运算时，包括： 在有效符号的第一端的数据串，卷积滤波器对第一数据串执行卷积运算，其中有效符号的第二端的数据串被循环地添加到第一端的数据串。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    10.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20070004233A1

    公开(公告)日：2007-01-04

    申请号：US11425559

    申请日：2006-06-21

    申请人： Masafumi MORISUE ,  Ryosuke WATANABE ,  Junya MARUYAMA ,  Daiki YAMADA

    发明人： Masafumi MORISUE ,  Ryosuke WATANABE ,  Junya MARUYAMA ,  Daiki YAMADA

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/13 ,  H01L31/18 ,  Y10S438/94

    摘要： A first layer (an insulating layer), a second layer (a metal layer), and a third layer (an insulating layer) are formed over a substrate. Then, a fourth layer including a semiconductor element is formed over the third layer. After applying an organic resin film covering the fourth layer, laser light is irradiated to sections of a rear surface side of the substrate. By irradiating the second layer with laser light, the state of being covered with the organic resin film can be maintained at the same time as forming a space under the organic resin film by ablating (alternatively, evaporating or breaking down) an irradiated region of the second layer, to cause a lift in the film in a periphery thereof.

    摘要翻译： 在基板上形成第一层（绝缘层），第二层（金属层）和第三层（绝缘层）。 然后，在第三层上形成包括半导体元件的第四层。 在涂覆覆盖第四层的有机树脂膜之后，激光照射到基板的后表面侧的部分。 通过用激光照射第二层，可以在与有机树脂膜之间形成空间的同时通过烧蚀（或者，蒸发或分解）有机树脂膜的照射区域同时保持有机树脂膜被覆盖的状态。 第二层，以在其周围引起膜的提升。