摘要:
The present invention relates to a novel polymer suitable for use as an antireflective coating or as an additive in photoresist for absorption of reflected light. The novel polymer comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm and at least one unit that contains no aromatic funtionality. The polymer is soluble in organic solvents, preferrably solvents of low toxicity, or it may be soluble in water, which may additionally contain other water miscible organic solvents.
摘要:
Process for producing a photosensitizer comprising a diazo ester of a p-cresol oligomer where at least one of the hydroxy groups on the p-cresol ring has been esterified with diazo-sulfonyl chloride comprising from about 60 to 100 mole % 2,1,4 or 2,1,5-diazo sulfonyl chloride, or a mixture thereof; and a photoresist comprising an admixture of the photosensitizer, which is present in the photoresist composition in an amount sufficient to uniformly photosensitive the photoresist composition, a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition, and a suitable solvent.
摘要:
The present invention provides a method for producing a film forming, fractionated novolak resin, by:a) condensing formaldehyde with one or more phenolic compounds, and thereby producing a novolak resin;b) adding a photoresist solvent, and optionally a water-soluble organic polar solvent;c) feeding the mixture into a liquid/liquid centrifuge and feeding a C.sub.5 -C.sub.8 alkane, water or aromatic hydrocarbon solvent into the liquid/liquid centrifuge at a ratio of optional water-soluble organic polar solvent and photoresist solvent to C.sub.5 -C.sub.8 alkane, water or aromatic solvent, of from 5:1 to 0.5:1;d) rotating the liquid/liquid centrifuge containing the mixture at a speed of at least 500 rpm and thereby separating the mixture into two phases, collecting the two phases;e) optionally separating the lighter phase (L) into two second phases;f) removing residual C.sub.5 -C.sub.8 alkane, water or aromatic hydrocarbon solvent from the heavier phase (H) from step d) and leaving the novolak resin dissolved in the photoresist solvent;A method is also provided for producing photoresist composition from such a fractionated novolak resin and for producing microelectronic devices using such a photoresist composition.
摘要:
Disclosed is a method for producing low molecular weight oligomers of a film forming resin, which involves: a) providing a solution of the film forming resin in a first solvent system comprising a photoresist solvent, and optionally a water-soluble organic solvent; b) providing a second solvent system comprising at least one substantially pure C5-C8 alkane and/or at least one aromatic compound having at least one hydrocarbyl substituent and/or water/C1-C4 alcohol mixture; and performing steps c)-e) in the following order: c) mixing the solutions from a) and second solvent system from b) in a static mixer for a time period sufficient for efficient mixing; d) feeding the mixture from c) and second solvent system from b) through two separate inlet ports into a liquid/liquid centrifuge, one of the inlet ports feeding the mixture from c), the second inlet port feeding the second solvent system from b) into said liquid/liquid centrifuge at a feed ratio of the mixture from c) to the second solvent system from b) of from about 10/90 to about 90/10, at a temperature of from about 0° C. up to maximum temperature that is less than the boiling point of the lowest boiling solvent in the first or second solvent system; e) rotating the mixture from step d) inside the liquid/liquid centrifuge at a rotational speed sufficient to separate the mixture from step d) into two separate phases, and then collecting the two separate phases, each from two separate outlet ports, into two separate containers, wherein the heavier phase (H) comprises a fractionated film forming resin comprising higher molecular weight fractions of the film forming resin and the lighter phase (L) comprises low molecular weight oligomers of the film forming resin. The present invention also provides a method for producing a photoresist composition, and method for producing a microelectronic device using the aforementioned fractionated resin or low molecular weight oligomers of the film forming resin.
摘要:
The present invention provides a method for reducing the metal ion content of a film-forming resin, said method comprising the steps of: a) providing a solution of the film-forming resin in a water-immiscible solvent system comprising at least one water-immiscible solvent; b) providing a washing solution comprising water or a dilute solution of a water-soluble metal ion chelating agent; c) feeding the solutions from a) and b) through two separate inlet ports into a liquid/liquid centrifuge, one of said inlet ports feeding solution from a), the second inlet port feeding the solution from b) into said liquid/liquid centrifuge at a feed rate ratio of the solution from a) to that from b) from about 10/90 to about 90/10, at a temperature of from about 0° C. up to a maximum temperature that is less than the boiling point of the lowest boiling water-immiscible solvent in the water-immiscible solvent system; and d) rotating the mixture from step c) inside said liquid/liquid centrifuge at a rotational speed sufficient to separate the mixture from step c) into two separate phases, and then collecting the two separate phases, each through a separate outlet port, into two separate containers, wherein the heavier phase (H) comprises the film-forming resin having a reduced metal ion content in the water-immiscible solvent system, with a minor amount of water; and the lighter phase (L) comprises: 1) an aqueous solution of metal ions and a minor amount of a mixture of 2) the water-immiscible solvent system, and 3) the film-forming resin. The present invention also provides for a method for producing a photoresist composition and a method for producing a microelectronic device utilizing a film-forming resin produced by the aforementioned method.
摘要:
The present invention provides methods for producing TPPA having low level of metal ions, utilizing treated ion exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such TPPA for producing semiconductor devices using such photoresist compositions.
摘要:
The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions and a substantially consistent molecular weight. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.
摘要:
The present invention provides methods for producing a photoresist having a very low level of metal ions, utilizing a treated chelating ion exchange resins to make the neutral ammonium salt or acid form. A method is also provided for producing semiconductor devices using such photoresist compositions.
摘要:
The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having consistent molecular weight and a very low level of metal ions, utilizing a solid acid condensation catalyst. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.