摘要:
Disclosed is a method for producing low molecular weight oligomers of a film forming resin, which involves: a) providing a solution of the film forming resin in a first solvent system comprising a photoresist solvent, and optionally a water-soluble organic solvent; b) providing a second solvent system comprising at least one substantially pure C5-C8 alkane and/or at least one aromatic compound having at least one hydrocarbyl substituent and/or water/C1-C4 alcohol mixture; and performing steps c)-e) in the following order: c) mixing the solutions from a) and second solvent system from b) in a static mixer for a time period sufficient for efficient mixing; d) feeding the mixture from c) and second solvent system from b) through two separate inlet ports into a liquid/liquid centrifuge, one of the inlet ports feeding the mixture from c), the second inlet port feeding the second solvent system from b) into said liquid/liquid centrifuge at a feed ratio of the mixture from c) to the second solvent system from b) of from about 10/90 to about 90/10, at a temperature of from about 0° C. up to maximum temperature that is less than the boiling point of the lowest boiling solvent in the first or second solvent system; e) rotating the mixture from step d) inside the liquid/liquid centrifuge at a rotational speed sufficient to separate the mixture from step d) into two separate phases, and then collecting the two separate phases, each from two separate outlet ports, into two separate containers, wherein the heavier phase (H) comprises a fractionated film forming resin comprising higher molecular weight fractions of the film forming resin and the lighter phase (L) comprises low molecular weight oligomers of the film forming resin. The present invention also provides a method for producing a photoresist composition, and method for producing a microelectronic device using the aforementioned fractionated resin or low molecular weight oligomers of the film forming resin.
摘要:
The present invention relates to an antireflective composition comprising a polymer, a thermal acid generator and optionally a crosslinking agent, where the polymer comprises at least one hydrophobic unit (1), at least one chromophore unit (2), at least one unit with a crosslinking site (3) and optionally a unit capable of crosslinking the polymer, where, R1 to R8 are independently selected from hydrogen and C1-C4 alkyl, W1 is a fully or partially fluorinated alkylene group, X is selected from F, H and OH; W2 comprises a chromophore group, and W3 Y comprises a crosslinking site. The invention also relates to a process for using the antireflective coating composition.
摘要:
The invention relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least one primary organic solvent and at least one secondary organic solvent selected from any of structures 1, 2 and 3, where, R1, R3, and R4, are selected from H and C1-C6 alkyl, and R2, R5, R6, R7, R8, and R9 are selected from C1-C6 alkyl, and n=1-5. The invention also relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least 2 organic solvents, and where the antireflective coating composition has a liquid particle count at 0.2 micron of less than 100/ml after accelerated aging.
摘要:
The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, A is a nonaromatic linking moiety, R′ and R″ are independently selected from hydrogen, Z and W—OH, where Z is a (C1-C20) hydrocarbyl moiety and W is a (C1-C20) hydrocarbyl linking moiety, and, Y′ is independently a (C1-C20) hydrocarbyl linking moiety. The invention further relates to a process for imaging the antireflective coating composition.
摘要:
The present invention relates to a coating solution comprising a polymer obtained by reacting a glycoluril compound with at least one reactive compound containing at least one hydroxy group and/or at least one acid group, and further where the polymer is soluble in an organic solvent. The invention also relates to a process for imaging a photoresist coated over such a coating composition and to a polymer for the coating composition.
摘要:
The present invention relates to an underlayer coating composition capable of being crosslinked comprising a polymer, a compound capable of generating a strong acid, and optionally a crosslinker, where the polymer comprises at least one absorbing chromophore and at least one moiety selected from an epoxy group, an aliphatic hydroxy group and mixtures thereof.The invention further relates to a process of imaging the underlayer coating compositions.
摘要:
The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, A is a nonaromatic linking moiety, R′ and R″ are independently selected from hydrogen, Z and W—OH, where Z is a (C1-C20) hydrocarbyl moiety and W is a (C1-C20) hydrocarbyl linking moiety, and, Y′ is independently a (C1-C20) hydrocarbyl linking moiety. The invention further relates to a process for imaging the antireflective coating composition.
摘要翻译:本发明涉及一种用于光致抗蚀剂层的抗反射涂料组合物,其包含聚合物,交联剂和酸产生剂,其中聚合物包含至少一个结构单元1,其中A是非芳族连接部分,R'和R' '独立地选自氢,Z和W-OH,其中Z是(C 1 -C 20 -C 20)烃基部分,W是(C 1 H 12) C 20 -C 20烃基连接部分,Y'独立地为(C 1 -C 20)烃基连接部分 。 本发明还涉及一种用于对抗反射涂料组合物进行成像的方法。