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公开(公告)号：US20130149496A1
公开(公告)日：2013-06-13
申请号：US13693379
申请日：2012-12-04
Applicant: Prantik Mazumder , Valerio Pruneri , Mark Alejandro Quesada , Wageesha Senaratne , Lili Tian
Inventor： Prantik Mazumder , Valerio Pruneri , Mark Alejandro Quesada , Wageesha Senaratne , Lili Tian
IPC: C09D7/12
CPC classification number: G02B1/18 , B82Y30/00 , C09D7/66 , G02B27/0006 , G06F3/041 , G06F2203/04103 , Y10T428/24372
Abstract: Described herein are various methods for making textured articles, textured articles that have improved fingerprint resistance, and methods of using the textured articles. The textured articles generally include a substrate and at least two different sets of nanostructured topographical features that are created in or on a surface of the substrate. Each set of nanostructured topographical features will have at least one average dimensional attribute that is different from that of any other set of nanostructured topographical features.
Abstract translation: 本文描述了用于制造纹理制品，具有改善的耐指纹性的纹理制品以及使用纹理制品的方法的各种方法。 纹理制品通常包括衬底和在衬底的表面中或表面上形成的至少两组不同的纳米结构化形貌特征。 每组纳米结构的地形特征将具有与任何其他一组纳米结构化地形特征不同的至少一个平均尺寸属性。
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公开(公告)号：US20130136894A1
公开(公告)日：2013-05-30
申请号：US13687208
申请日：2012-11-28
Applicant: David Eugene Baker , Carme Gomex Carbonell , David Francis Dawson-Elli , Prantik Mazumder , Valerio Pruneri , Lili Tian
Inventor： David Eugene Baker , Carme Gomex Carbonell , David Francis Dawson-Elli , Prantik Mazumder , Valerio Pruneri , Lili Tian
CPC classification number: B05D3/007 , B05D3/0254 , B32B33/00 , C03C17/06 , C23C14/185 , C23C14/5806 , Y10T428/24355
Abstract: Described herein are improved dewetting methods and improved patterned articles produced using such methods. The improved methods and articles generally implement continuous ultra-thin metal-containing films or film stacks as the materials to be dewetted. For example, a method can involve the steps of providing a substrate that has a continuous ultra-thin metal-containing film or film stack disposed on a surface thereof, and dewetting at least a portion of the continuous ultra-thin metal-containing film or film stack to produce a plurality of discrete metal-containing dewetted islands on the surface of the substrate.
Abstract translation: 本文描述了改进的去湿方法和使用这种方法制备的改进的图案化制品。 改进的方法和制品通常实现连续的超薄含金属膜或膜叠层作为要脱色的材料。 例如，一种方法可以包括以下步骤：提供具有设置在其表面上的连续的含超薄金属膜或薄膜叠层的基板，并且将至少一部分连续的超薄金属含膜膜或 膜堆叠以在基板的表面上产生多个离散的含金属的脱色岛。
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公开(公告)号：US08242033B2
公开(公告)日：2012-08-14
申请号：US12632837
申请日：2009-12-08
Applicant: Glen Bennett Cook , Prantik Mazumder , Balram Suman , Natesan Venkataraman
Inventor： Glen Bennett Cook , Prantik Mazumder , Balram Suman , Natesan Venkataraman
IPC: H01L21/00
CPC classification number: C30B29/64 , C30B11/003 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/16 , C30B29/42 , C30B29/52 , H01L21/02532 , H01L21/02667 , H01L31/182 , H01L31/1872 , Y02E10/546 , Y02P70/521
Abstract: Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.
Abstract translation: 公开了制备和/或处理半导体材料制品的方法。 在各种方法中，提供了半导体材料的第一制品，第一半导体材料被充分加热以熔化半导体材料，并且熔化的半导体材料在基本平行于熔融半导体制品的最短尺寸的方向上固化 材料。 还公开了通过本文所述方法制备的半导体材料制品。
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公开(公告)号：US20110206903A1
公开(公告)日：2011-08-25
申请号：US13027396
申请日：2011-02-15
Applicant: Prantik Mazumder
Inventor： Prantik Mazumder
CPC classification number: C03C17/28 , C03C17/30 , C03C2204/08 , C03C2217/75 , Y10T428/24355 , Y10T428/24479 , Y10T428/24521
Abstract: A glass substrate having an oleophobic surface. The surface is substantially free of features that form a reentrant geometry and includes a plurality of gas-trapping features extending from the surface to a depth below the surface and a coating comprising at least one of a fluoropolymer and a fluorosilane. The gas-trapping features are substantially isolated from each other, and trap gas below droplets to prevent wetting of the surface.
Abstract translation: 具有疏油性表面的玻璃基板。 表面基本上没有形成折入几何形状的特征，并且包括从表面延伸到表面下方的深度的多个气体捕获特征以及包含含氟聚合物和氟硅烷中的至少一种的涂层。 气体捕获特征基本上彼此隔离，并将气体捕获在液滴之下以防止表面的润湿。
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公开(公告)号：US20110135902A1
公开(公告)日：2011-06-09
申请号：US12631054
申请日：2009-12-04
Applicant: Prantik Mazumder , Balram Suman
Inventor： Prantik Mazumder , Balram Suman
IPC: B28B1/30
CPC classification number: C30B15/007 , C30B11/00 , C30B19/062 , C30B29/06
Abstract: A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold.
Abstract translation: 制造半导体材料制品的方法包括选择制品的目标厚度，然后将模具浸入熔融半导体材料中以便浸入时间有效地在模具的外表面上形成半导体材料的固体层，其中 固体层的厚度基本上等于目标厚度。 浸入时间被选择为基本上等于转变时间，其从具有特定属性的模具的实心层厚度对浸没时间的图确定，包括模具成分，模具厚度和初始模具温度。 过渡时间，从而浸没时间对应于固体层厚度对于特定模具的固体层厚度与浸没时间曲线的最大值。
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Patent Agency Ranking
16.发明申请System and method for self-referencing a sensor in a micron-sized deep flow chamber 失效用于在微米级深流动室中自我参考传感器的系统和方法公开(公告)号：US20060106557A1
公开(公告)日：2006-05-18
申请号：US10993565
申请日：2004-11-18
Applicant: Norman Fontaine , Prantik Mazumder , Mark Quesada , Eric Mozdy , Po Yuen
Inventor： Norman Fontaine , Prantik Mazumder , Mark Quesada , Eric Mozdy , Po Yuen
IPC: G01R35/00
CPC classification number: G01N21/7743 , G01N21/05 , G01N21/276 , G01N21/553 , G01N2021/0346 , G01N2021/058 , G01N2201/108 , G01N2201/1211 , G01N2201/1217 , G01N2201/127 , G01N2201/12723 , G01N2201/128 , Y10T436/117497 , Y10T436/2575
Abstract: A system and method are described herein for self-referencing a sensor that is used to detect a biomolecular binding event and/or kinetics which occur in a sample solution flowing along side a reference solution in a micron-sized deep flow channel.
Abstract translation: 本文描述了一种系统和方法，用于自我参考用于检测在微米尺寸深流动通道中沿着参考溶液侧流动的样品溶液中发生的生物分子结合事件和/或动力学的传感器。
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公开(公告)号：US09296183B2
公开(公告)日：2016-03-29
申请号：US13687208
申请日：2012-11-28
Applicant: David Eugene Baker , Carme Gomez Carbonell , David Francis Dawson-Elli , Prantik Mazumder , Valerio Pruneri , Lili Tian
Inventor： David Eugene Baker , Carme Gomez Carbonell , David Francis Dawson-Elli , Prantik Mazumder , Valerio Pruneri , Lili Tian
CPC classification number: B05D3/007 , B05D3/0254 , B32B33/00 , C03C17/06 , C23C14/185 , C23C14/5806 , Y10T428/24355
Abstract: Described herein are improved dewetting methods and improved patterned articles produced using such methods. The improved methods and articles generally implement continuous ultra-thin metal-containing films or film stacks as the materials to be dewetted. For example, a method can involve the steps of providing a substrate that has a continuous ultra-thin metal-containing film or film stack disposed on a surface thereof, and dewetting at least a portion of the continuous ultra-thin metal-containing film or film stack to produce a plurality of discrete metal-containing dewetted islands on the surface of the substrate.
Abstract translation: 本文描述了改进的去湿方法和使用这种方法制备的改进的图案化制品。 改进的方法和制品通常实现连续的超薄含金属膜或膜叠层作为要脱色的材料。 例如，一种方法可以包括以下步骤：提供具有设置在其表面上的连续的含超薄金属膜或薄膜叠层的基板，并且将至少一部分连续的超薄金属含膜膜或 膜堆叠以在基板的表面上产生多个离散的含金属的脱色岛。
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18.发明授权公开(公告)号：US08445364B2
公开(公告)日：2013-05-21
申请号：US12156499
申请日：2008-06-02
Applicant: Prantik Mazumder , Kamal Kishore Soni , Christopher Scott Thomas , Natesan Venkataraman , Glen Bennett Cook
Inventor： Prantik Mazumder , Kamal Kishore Soni , Christopher Scott Thomas , Natesan Venkataraman , Glen Bennett Cook
CPC classification number: H01L21/02667 , H01L21/02532 , H01L21/02546
Abstract: A method for treating semiconducting materials includes providing a semiconducting material having a crystalline structure, pre-heating a portion of the semiconducting material to a temperature less than the melting temperature of the semiconducting material, and then cooling the semiconducting material prior to exposing at least the portion of the semiconducting material to a heat source to create a melt pool, and cooling the semiconducting material.
Abstract translation: 一种用于处理半导体材料的方法包括提供具有晶体结构的半导体材料，将半导体材料的一部分预加热到低于半导体材料的熔融温度的温度，然后在至少暴露出半导体材料之前冷却半导体材料 半导体材料的一部分到热源以产生熔池，并冷却半导体材料。
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19.发明申请COMPOSITE ACTIVE MOLDS AND METHODS OF MAKING ARTICLES OF SEMICONDUCTING MATERIAL 审中-公开复合材料的主要成分及制备方法公开(公告)号：US20120299218A1
公开(公告)日：2012-11-29
申请号：US13117440
申请日：2011-05-27
Applicant: Glen Bennett Cook , Prantik Mazumder , Balram Suman , Natesan Venkataraman
Inventor： Glen Bennett Cook , Prantik Mazumder , Balram Suman , Natesan Venkataraman
CPC classification number: C30B15/007 , C30B15/36 , C30B29/06
Abstract: The disclosure relates to a substrate mold comprising a shell material having an external surface configured to engage with molten semiconducting material, and an internal surface configured as a thermal transfer surface to transfer heat therethrough, and a core defined within the shell material and configured to remove heat from the shell material through the thermal transfer surface of the shell material. The substrate mold is configured to be immersed into the molten semiconducting material, and the external surface of the shell material is configured to have solidified molten semiconducting material formed thereon.
Abstract translation: 本公开涉及一种基材模具，其包括壳体材料，该外壳材料具有被配置为与熔融半导体材料接合的外表面，以及被配置为热转印表面以传递热量的内表面，以及限定在外壳材料内的构造物， 外壳材料通过外壳材料的热传递表面的热量。 衬底模具被配置为浸入熔融半导体材料中，并且外壳材料的外表面被配置为具有在其上形成的凝固的熔融半导体材料。
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20.发明授权公开(公告)号：US08300385B2
公开(公告)日：2012-10-30
申请号：US13050108
申请日：2011-03-17
Applicant: Adra Smith Baca , Roy Joseph Bourcier , Todd P St Clair , Prantik Mazumder , Andrew R Nadjadi , Vitor Marino Schneider
Inventor： Adra Smith Baca , Roy Joseph Bourcier , Todd P St Clair , Prantik Mazumder , Andrew R Nadjadi , Vitor Marino Schneider
IPC: H01G9/00
CPC classification number: H01G9/058 , C02F1/469 , C02F2001/46138 , C02F2001/46161 , H01G9/155 , H01G11/34 , Y02E60/13
Abstract: Composite carbon electrodes for use in, for example, Capacitive Deionization (CDI) of a fluid stream or, for example, an electric double layer capacitor (EDLC) are described. Methods of making the composite carbon electrodes are also described. The composite carbon electrode comprises an electrically conductive porous matrix comprising carbon; and an electric double layer capacitor, comprising an activated carbonized material, dispersed throughout the pore volume of the electrically conductive porous matrix.
Abstract translation: 描述了用于例如流体流的电容去离子（CDI）或例如电双层电容器（EDLC）的复合碳电极。 还描述了制备复合碳电极的方法。 复合碳电极包括含碳的导电多孔基体; 以及分散在导电多孔基体的细孔体积中的活性炭化材料的双电层电容器。
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