公开(公告)号：US20060052116A1

公开(公告)日：2006-03-09

申请号：US10937690

申请日：2004-09-09

申请人： Kulvir Bhogal ,  Kwang Kang

发明人： Kulvir Bhogal ,  Kwang Kang

IPC分类号： H04Q7/20

CPC分类号： H04W4/029 ,  H04W76/10

摘要： An improved caller ID system for providing geographic location information about an incoming call to a cell phone is provided. The area code of an incoming call based on the caller ID information is detected and an area code database is accessed within the cell phone or on the cellular network. The corresponding geographic location of the detected area code for the incoming call is retrieved from the database and displayed for the user on the cell phone, either automatically in response to the incoming call or upon actuation of the function by the user.

摘要翻译： 提供了一种用于向蜂窝电话提供关于来电的地理位置信息的改进的呼叫者ID系统。 检测基于呼叫者ID信息的呼入呼叫的区号，并在蜂窝电话内或蜂窝网络上访问区号码数据库。 从数据库中检索用于来电的检测区域代码的对应地理位置，并且响应于来电或在用户激活功能时自动地在蜂窝电话上为用户显示。

公开(公告)号：US20070069193A1

公开(公告)日：2007-03-29

申请号：US10576579

申请日：2004-04-01

申请人： Doo Yoon ,  Hyun Kim ,  Byung Chae ,  Kwang Kang ,  Sung Maeng

发明人： Doo Yoon ,  Hyun Kim ,  Byung Chae ,  Kwang Kang ,  Sung Maeng

IPC分类号： H01L47/02

CPC分类号： H01L49/003

摘要： Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.

摘要翻译： 提供了一种金属 - 绝缘体转变开关晶体管，其在硅衬底（背栅结构）上具有栅电极，并且具有从绝缘体相变为VO 2的金属 - 绝缘体 - 过渡沟道层 金属相，反之亦然，取决于电场的变化，以及其制造方法，由此可以制造具有高电流增益特性并且热稳定的金属 - 绝缘体转变开关晶体管。

公开(公告)号：US20070028185A1

公开(公告)日：2007-02-01

申请号：US11189889

申请日：2005-07-26

申请人： Kulvir Bhogal ,  Keys Botzum ,  Kwang Kang ,  Alexandre Polozoff

发明人： Kulvir Bhogal ,  Keys Botzum ,  Kwang Kang ,  Alexandre Polozoff

IPC分类号： G06F9/00

CPC分类号： G06F17/30899

摘要： A system and method to allow authorized popup windows on a website are provided. With the system and method, one or more identifiers of authorized popup window sources are associated with website content. When the website content is downloaded to a client device in response to a request, the one or more identifiers are also provided to the client device. A popup blocker application resident on the client device uses the one or more identifiers to generate a filter list of authorized popup window sources against which the source of popup windows may be compared when the popup window attempts to be loaded into the browser. If the source of the popup window that is attempting to be loaded is not present in the list of authorized sources of popup windows, then the loading and output of the popup window content is blocked.

摘要翻译： 提供了允许网站上的授权弹出窗口的系统和方法。 利用系统和方法，授权的弹出窗口源的一个或多个标识符与网站内容相关联。 当网站内容响应于请求被下载到客户端设备时，一个或多个标识符也被提供给客户端设备。 驻留在客户机设备上的弹出窗口阻止程序应用程序使用一个或多个标识符来生成授权的弹出窗口源的过滤器列表，当弹出窗口尝试加载到浏览器中时，弹出窗口的源可以与之对比。 如果尝试加载的弹出窗口的源不在弹出窗口的授权源列表中，则会弹出窗口内容的加载和输出被阻止。

公开(公告)号：US20060121147A1

公开(公告)日：2006-06-08

申请号：US11271051

申请日：2005-11-10

申请人： Ho Ryn ,  Yong Yoo ,  Woo Cheong ,  Dong Suh ,  Mun Paek ,  Kwang Kang

发明人： Ho Ryn ,  Yong Yoo ,  Woo Cheong ,  Dong Suh ,  Mun Paek ,  Kwang Kang

IPC分类号： B28B11/08 ,  B29D17/00 ,  B29C59/00 ,  A01J21/00 ,  A01J25/12 ,  A21C11/02 ,  A21C3/00 ,  A23G1/20 ,  A23G3/00 ,  A23P1/00 ,  B28B21/00

CPC分类号： B29D17/005

摘要： Provided are a jig used in a forming a cover layer of a small form factor optical disk and a method forming a cover layer in a small form factor optical disk using the jig. The jig includes: a body; a cylindrical wall formed inside the body and mounting an optical disk plate to a predetermined depth; and a pin positioned in a center of the cylindrical wall and combined with a central hole of the optical disk plate.

摘要翻译： 提供了一种用于形成小尺寸光盘的覆盖层的夹具以及使用夹具在小尺寸光盘中形成覆盖层的方法。 夹具包括：身体; 形成在体内的圆筒壁，并将光盘板安装到预定深度; 以及定位在圆柱形壁的中心并与光盘板的中心孔组合的销。

公开(公告)号：US20050098836A1

公开(公告)日：2005-05-12

申请号：US10866274

申请日：2004-06-10

申请人： Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

发明人： Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC分类号： H01L21/822 ,  H01L27/04 ,  H01L29/78 ,  H01L45/00 ,  H01L49/00 ,  H02H9/02 ,  H01L29/94

CPC分类号： H01L45/00

摘要： A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

摘要翻译： 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

公开(公告)号：US20070115715A1

公开(公告)日：2007-05-24

申请号：US11603463

申请日：2006-11-22

申请人： Ho Ryu ,  Dong Suh ,  Mun Paek ,  Kwang Kang

发明人： Ho Ryu ,  Dong Suh ,  Mun Paek ,  Kwang Kang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/12

摘要： Provided are a magnetic random access memory (MRAM) device using perpendicular magnetization, capable of stably reducing a size of a magnetic domain, and a method of fabricating the magnetic random access memory device. The magnetic random access memory device includes at least two magnetic layers, a tunnel insulation layer, and an underlayer. Each of the two magnetic layers has a magnetic domain perpendicularly magnetized in a thickness direction. The magnetic random access memory device includes an underlayer located on one side of at least one magnetic layer, and including at least one element of elements forming at least one magnetic layer to induce exchange coupling with the magnetic layer.

摘要翻译： 提供了使用能够稳定地减小磁畴尺寸的垂直磁化的磁性随机存取存储器（MRAM）装置，以及制造磁性随机存取存储器件的方法。 磁性随机存取存储器件包括至少两个磁性层，隧道绝缘层和底层。 两个磁性层中的每一个具有沿厚度方向垂直磁化的磁畴。 磁性随机存取存储器件包括位于至少一个磁性层的一侧的底层，并且包括形成至少一个磁性层的元件的至少一个元件，以引起与磁性层的交换耦合。

公开(公告)号：US20060231872A1

公开(公告)日：2006-10-19

申请号：US10557552

申请日：2003-12-30

申请人： Hyun Kim ,  Kwang Kang ,  Doo Youn ,  Byung Chae

发明人： Hyun Kim ,  Kwang Kang ,  Doo Youn ,  Byung Chae

IPC分类号： H01L29/76

CPC分类号： H01L49/003 ,  H01L21/31691 ,  H01L51/0051 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545

摘要： Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.

摘要翻译： 提供了包括绝缘体 - 半导体过渡材料层的场效应晶体管。 绝缘体 - 半导体过渡材料层选择性地提供第一状态，其中当不施加栅极场时，在绝缘体半导体转移材料层的表面上没有引入带电孔，并且第二状态引入大量带电孔 绝缘体 - 半导体过渡材料层的表面，当施加负电场时形成导电通道。 在绝缘体半导体过渡材料层上形成栅极绝缘层。 栅电极形成在栅极绝缘层上，以将预定强度的负电场施加到绝缘体 - 半导体转移材料层。 源电极和漏电极在绝缘体 - 半导体过渡材料层的两侧彼此面对设置，使得当绝缘体半导体转移材料层处于第二状态时，电荷载流子能够流过导电沟道。