公开(公告)号：US07412259B2

公开(公告)日：2008-08-12

申请号：US11062984

申请日：2005-02-22

申请人： Kyung-Min Yoo ,  Doo-Youn Lee

发明人： Kyung-Min Yoo ,  Doo-Youn Lee

IPC分类号： H04B1/00 ,  H04M1/00

CPC分类号： H04M1/0262 ,  H04M1/15 ,  H04M1/72527 ,  H04W88/02

摘要： A mobile phone having a USB interface and including a main body and a battery pack removably mounted to the main body is provided. The mobile phone includes a USB connector that may be connected to an external device to allow data transmission between the external device and the mobile phone; a holding unit for containing the USB connector and from which the USB connector may be withdrawn; and a housing mounted in the mobile phone and including a flash memory for storing data, and a controller for controlling a data signal of the flash memory through the USB connector.

摘要翻译： 提供一种具有USB接口并且包括可拆卸地安装到主体的主体和电池组的移动电话。 手机包括可连接到外部设备的USB连接器，以允许外部设备和移动电话之间的数据传输; 用于容纳所述USB连接器的保持单元，并且所述USB连接器可从所述保持单元中取出; 以及安装在移动电话中并且包括用于存储数据的闪存的外壳，以及用于通过USB连接器控制闪存的数据信号的控制器。

公开(公告)号：US20060231872A1

公开(公告)日：2006-10-19

申请号：US10557552

申请日：2003-12-30

申请人： Hyun Kim ,  Kwang Kang ,  Doo Youn ,  Byung Chae

发明人： Hyun Kim ,  Kwang Kang ,  Doo Youn ,  Byung Chae

IPC分类号： H01L29/76

CPC分类号： H01L49/003 ,  H01L21/31691 ,  H01L51/0051 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545

摘要： Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.

摘要翻译： 提供了包括绝缘体 - 半导体过渡材料层的场效应晶体管。 绝缘体 - 半导体过渡材料层选择性地提供第一状态，其中当不施加栅极场时，在绝缘体半导体转移材料层的表面上没有引入带电孔，并且第二状态引入大量带电孔 绝缘体 - 半导体过渡材料层的表面，当施加负电场时形成导电通道。 在绝缘体半导体过渡材料层上形成栅极绝缘层。 栅电极形成在栅极绝缘层上，以将预定强度的负电场施加到绝缘体 - 半导体转移材料层。 源电极和漏电极在绝缘体 - 半导体过渡材料层的两侧彼此面对设置，使得当绝缘体半导体转移材料层处于第二状态时，电荷载流子能够流过导电沟道。

公开(公告)号：US20050098836A1

公开(公告)日：2005-05-12

申请号：US10866274

申请日：2004-06-10

申请人： Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

发明人： Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC分类号： H01L21/822 ,  H01L27/04 ,  H01L29/78 ,  H01L45/00 ,  H01L49/00 ,  H02H9/02 ,  H01L29/94

CPC分类号： H01L45/00

摘要： A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

摘要翻译： 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

公开(公告)号：US20060089171A1

公开(公告)日：2006-04-27

申请号：US11062984

申请日：2005-02-22

申请人： Kyung-Min Yoo ,  Doo-Youn Lee

发明人： Kyung-Min Yoo ,  Doo-Youn Lee

IPC分类号： H04B1/38

CPC分类号： H04M1/0262 ,  H04M1/15 ,  H04M1/72527 ,  H04W88/02

摘要： A mobile phone having a USB interface and including a main body and a battery pack removably mounted to the main body is provided. The mobile phone includes a USB connector that may be connected to an external device to allow data transmission between the external device and the mobile phone; a holding unit for containing the USB connector and from which the USB connector may be withdrawn; and a housing mounted in the mobile phone and including a flash memory for storing data, and a controller for controlling a data signal of the flash memory through the USB connector.

摘要翻译： 提供一种具有USB接口并且包括可拆卸地安装到主体的主体和电池组的移动电话。 手机包括可连接到外部设备的USB连接器，以允许外部设备和移动电话之间的数据传输; 用于容纳所述USB连接器的保持单元，并且所述USB连接器可从所述保持单元中取出; 以及安装在移动电话中并且包括用于存储数据的闪存的外壳，以及用于通过USB连接器控制闪存的数据信号的控制器。

公开(公告)号：US20060011942A1

公开(公告)日：2006-01-19

申请号：US11011878

申请日：2004-12-13

申请人： Hyun Kim ,  Doo Youn ,  Byung Chae ,  Kwang Kang ,  Yong Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Kim

发明人： Hyun Kim ,  Doo Youn ,  Byung Chae ,  Kwang Kang ,  Yong Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Kim

IPC分类号： H01L31/0328 ,  H01L21/8232

CPC分类号： H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

摘要： Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

摘要翻译： 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。