公开(公告)号：US20050098836A1

公开(公告)日：2005-05-12

申请号：US10866274

申请日：2004-06-10

申请人： Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

发明人： Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC分类号： H01L21/822 ,  H01L27/04 ,  H01L29/78 ,  H01L45/00 ,  H01L49/00 ,  H02H9/02 ,  H01L29/94

CPC分类号： H01L45/00

摘要： A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

摘要翻译： 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

公开(公告)号：US20060011942A1

公开(公告)日：2006-01-19

申请号：US11011878

申请日：2004-12-13

申请人： Hyun Kim ,  Doo Youn ,  Byung Chae ,  Kwang Kang ,  Yong Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Kim

发明人： Hyun Kim ,  Doo Youn ,  Byung Chae ,  Kwang Kang ,  Yong Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Kim

IPC分类号： H01L31/0328 ,  H01L21/8232

CPC分类号： H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

摘要： Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

摘要翻译： 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

公开(公告)号：US20060231872A1

公开(公告)日：2006-10-19

申请号：US10557552

申请日：2003-12-30

申请人： Hyun Kim ,  Kwang Kang ,  Doo Youn ,  Byung Chae

发明人： Hyun Kim ,  Kwang Kang ,  Doo Youn ,  Byung Chae

IPC分类号： H01L29/76

CPC分类号： H01L49/003 ,  H01L21/31691 ,  H01L51/0051 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545

摘要： Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.

摘要翻译： 提供了包括绝缘体 - 半导体过渡材料层的场效应晶体管。 绝缘体 - 半导体过渡材料层选择性地提供第一状态，其中当不施加栅极场时，在绝缘体半导体转移材料层的表面上没有引入带电孔，并且第二状态引入大量带电孔 绝缘体 - 半导体过渡材料层的表面，当施加负电场时形成导电通道。 在绝缘体半导体过渡材料层上形成栅极绝缘层。 栅电极形成在栅极绝缘层上，以将预定强度的负电场施加到绝缘体 - 半导体转移材料层。 源电极和漏电极在绝缘体 - 半导体过渡材料层的两侧彼此面对设置，使得当绝缘体半导体转移材料层处于第二状态时，电荷载流子能够流过导电沟道。

公开(公告)号：US20070069193A1

公开(公告)日：2007-03-29

申请号：US10576579

申请日：2004-04-01

申请人： Doo Yoon ,  Hyun Kim ,  Byung Chae ,  Kwang Kang ,  Sung Maeng

发明人： Doo Yoon ,  Hyun Kim ,  Byung Chae ,  Kwang Kang ,  Sung Maeng

IPC分类号： H01L47/02

CPC分类号： H01L49/003

摘要： Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.

摘要翻译： 提供了一种金属 - 绝缘体转变开关晶体管，其在硅衬底（背栅结构）上具有栅电极，并且具有从绝缘体相变为VO 2的金属 - 绝缘体 - 过渡沟道层 金属相，反之亦然，取决于电场的变化，以及其制造方法，由此可以制造具有高电流增益特性并且热稳定的金属 - 绝缘体转变开关晶体管。

公开(公告)号：US20060125052A1

公开(公告)日：2006-06-15

申请号：US11210015

申请日：2005-08-22

申请人： Seung Moon ,  Han Ryu ,  Young Kim ,  Min Kwak ,  Su Lee ,  Kwang Kang

发明人： Seung Moon ,  Han Ryu ,  Young Kim ,  Min Kwak ,  Su Lee ,  Kwang Kang

IPC分类号： H01L29/93

CPC分类号： H01L28/82 ,  H01L27/0808

摘要： A lateral type tunable capacitor and a high frequency tunable device having the same are provided. The high frequency tunable device includes substrate; a signal line formed on the substrate; a plurality of tunable capacitors aligned on both sides of the signal line along the longitudinal direction of the signal line; an electrode disposed on the substrate for applying a DC voltage to the tunable capacitors. The tunable capacitor includes a dielectric layer formed on the substrate, and a first capacitor electrode and a second capacitor electrode formed on both sides of the dielectric layer on the substrate, and the first capacitor electrode, the dielectric layer, and the second capacitor electrode are aligned in parallel on the substrate.

摘要翻译： 提供了一种横向型可调电容器和具有该横向型可调电容器的高频可调谐器件。 高频可调谐装置包括基板; 形成在基板上的信号线; 多个可调谐电容器，沿信号线的纵向排列在信号线的两侧; 设置在所述基板上的用于向所述可调电容器施加DC电压的电极。 可调谐电容器包括形成在基板上的电介质层，以及形成在基板上的电介质层两侧的第一电容电极和第二电容电极，第一电容电极，电介质层和第二电容器电极是 在基板上平行排列。

公开(公告)号：US20070174232A1

公开(公告)日：2007-07-26

申请号：US11327578

申请日：2006-01-06

申请人： Roland Barcia ,  Kulvir Bhogal ,  Kwang Kang ,  Alexandre Polozoff

发明人： Roland Barcia ,  Kulvir Bhogal ,  Kwang Kang ,  Alexandre Polozoff

IPC分类号： G06F17/30

CPC分类号： H04L51/00

摘要： A method, apparatus and computer-usable medium for using wildcards in a JMS Topic name. The method includes the steps of sending to a Java Naming and Directory Interface (JNDI) a storage message for messages that are identified by an identifier that includes a topic stock identifier and a topic wildcard indicator; and sending an implementation message from the JNDI to a middleware instructing the middleware to store new messages in any topic having the topic stock identifier. The implementation message causes the middleware to create a special topic that includes the topic stock identifier and the topic wildcard indicator, a query of all topics that include the topic stock identifier, and a generation of a reusable dynamic message flow instruction to a broker to direct future new messages from a publisher to all topics having the topic stock identifier.

摘要翻译： 用于在JMS主题名称中使用通配符的方法，设备和计算机可用介质。 该方法包括以下步骤：向包含主题库标识符和主题通配符指示符的标识符标识的消息发送到Java命名和目录接口（JNDI）存储消息; 并将实现消息从JNDI发送到指示中间件的中间件，以在具有主题库存标识符的任何主题中存储新消息。 实现消息导致中间件创建一个特殊主题，其中包括主题库存标识符和主题通配符指示符，包括主题库存标识符的所有主题的查询，以及生成可重用动态消息流指令， 从发布商到具有主题库存标识符的所有主题的未来新消息。

公开(公告)号：US20070022166A1

公开(公告)日：2007-01-25

申请号：US11186708

申请日：2005-07-21

申请人： Kulvir Bhogal ,  Kwang Kang ,  Alexandre Polozoff

发明人： Kulvir Bhogal ,  Kwang Kang ,  Alexandre Polozoff

IPC分类号： G06F15/16

CPC分类号： G06Q10/107

摘要： A system, computer program product and method of keeping track of an attachment that has been detached from an e-mail message are provided. Generally, a table on which an attachment that has been detached from an e-mail message is cross-referenced to its storage location is used. Further, a link is inserted into the e-mail message to facilitate access to the detached attachment. If the attachment is ever moved from its storage location to a new storage location, the cross-referencing table is updated to reflect the new storage location. The link is also updated to facilitate access to the attachment at the new storage location.

摘要翻译： 提供了一种系统，计算机程序产品和跟踪已经从电子邮件消息分离的附件的方法。 通常，使用与电子邮件消息分离的附件与其存储位置相对照的表。 此外，将链接插入到电子邮件消息中以便于访问分离的附件。 如果附件从其存储位置移动到新的存储位置，则更新相关参考表以反映新的存储位置。 该链接也被更新，以便于访问新存储位置的附件。

公开(公告)号：US20060123437A1

公开(公告)日：2006-06-08

申请号：US11270161

申请日：2005-11-09

申请人： Sung Lee ,  Kang Park ,  Mun Paek ,  Kwang Kang

发明人： Sung Lee ,  Kang Park ,  Mun Paek ,  Kwang Kang

IPC分类号： G11B7/08 ,  G11B7/085 ,  G11B7/09

CPC分类号： G11B7/08576 ,  G11B5/4833 ,  G11B5/5569

摘要： An ultra-small optical/magnetic head actuator includes: a swing arm movable in a horizontal direction (tracking direction) and a vertical direction (focusing direction) and having mounted thereon a head for reading and writing information on a disk. A tracking actuator moves the swing arm in the horizontal direction (tracking direction) and a pivot hinge adjusts a radius of rotation of the swing arm and guides the movement of the swing arm in the tracking direction. A focusing actuator moves the swing arm in the vertical direction (focusing direction), wherein the focusing actuator includes a focusing coil attached under the swing arm and a Halbach magnet array disposed under the focusing coil minimizes thickness. Friction or backlash can be avoided, and non-repetitive errors can be reduced. The thickness of the ultra-small storage device can be reduced due to the use of a Halbach magnet array.

公开(公告)号：US20060290259A1

公开(公告)日：2006-12-28

申请号：US10573518

申请日：2005-06-03

申请人： Yoon Song ,  Jin Lee ,  Kwang Kang

发明人： Yoon Song ,  Jin Lee ,  Kwang Kang

IPC分类号： H01J63/04

CPC分类号： H01J3/021 ,  B82Y10/00 ,  H01J29/467 ,  H01J29/481 ,  H01J2201/30469

摘要： Provided are a field emission device and a field emission display device using the same. The field emission device includes a cathode portion having a substrate, a cathode electrode formed on the substrate, and a field emitter connected to the cathode electrode; a field emission-suppressing gate portion formed on the cathode portion around the field emitter and surrounding the field emitter; and a field emission-inducing gate portion having a metal mesh with at least one penetrating hole, and a dielectric layer formed on at least a part of the metal mesh, wherein the field emission-suppressing gate portion suppresses electrons from being emitted from the field emitter, and the field emission-inducing gate portion induces electrons to be emitted from the field emitter. According to this configuration, the conventional problems of the field emission device including a gate leakage current, electron emission caused by an anode voltage, electron beam divergence can be significantly improved.

摘要翻译： 提供一种场发射器件和使用该场致发射器件的场致发射显示器件。 场发射器件包括阴极部分，其具有衬底，形成在衬底上的阴极电极和连接到阴极电极的场发射体; 形成在场发射体周围的阴极部分并且围绕场发射体的场致发射抑制栅极部; 以及具有至少一个贯通孔的金属网的场致发射栅极部分和形成在所述金属网的至少一部分上的电介质层，其中所述场致发射抑制栅极部分抑制电子从所述场发射 发射极和场致发射栅极部分引起从场致发射体发射的电子。 根据该结构，可以显着提高包括栅极漏电流，由阳极电压引起的电子发射，电子束发散的场致发射器件的常规问题。

公开(公告)号：US20060120249A1

公开(公告)日：2006-06-08

申请号：US11270998

申请日：2005-11-10

申请人： Dong Suh ,  Yong Park ,  Mun Paek ,  Ho Ryu ,  Hee Chung ,  Kwang Kang

发明人： Dong Suh ,  Yong Park ,  Mun Paek ,  Ho Ryu ,  Hee Chung ,  Kwang Kang

IPC分类号： G11B7/135

CPC分类号： G11B7/124

摘要： An optical head has a beam input/output coupler on a planar waveguide and other parts including: a light transmitting element emitting a beam; a planar waveguide formed on a substrate and receiving the beam oscillated from the light transmitting element; a beam input/output coupler integrated as a thin film on a portion of the planar waveguide and receiving the beam through the planar waveguide to transmit the beam vertically toward a disc positioned above the planar waveguide or transmitting the beam reflected from the disc through the planar waveguide; and light receiving elements receiving the beam propagated to the planar waveguide through the beam input/output coupler.