摘要:
A light generating part generates a first light based on a first control signal. A first driving part outputs a panel driving signal. A display panel receives the first light or a second light that is provided from an exterior to display an image based on the panel driving signal. A sensing part outputs a sensing signal based on the second light. A second driving part compares a reference voltage range with the sensing signal to output the first control signal. The reference voltage range is determined by a first reference voltage and a second reference voltage. Therefore, the light generating part is turned on/off based on the second light to decrease the power consumption of the light generating part, and an operation of the light generating part is stabilized.
摘要:
In a display apparatus, a light generating part generates a first light in response to a driving signal, and a first driving part outputs a panel driving signal. A display panel receives the first light from the light generating part and a second light externally provided, and displays an image in response to the panel driving signal. A light sensing part is disposed in the display panel so as to output a sensing signal corresponding a light amount of the second light. A second driving part compares the sensing signal with a predetermined reference value, and outputs a driving signal in accordance with the compared result. Thus, the display apparatus may reduce an electrical power consumed to drive the display apparatus.
摘要:
A light generating part generates a first light based on a first control signal. A first driving part outputs a panel driving signal. A display panel receives the first light or a second light that is provided from an exterior to display an image based on the panel driving signal. A sensing part outputs a sensing signal based on the second light. A second driving part compares a reference voltage range with the sensing signal to output the first control signal. The reference voltage range is determined by a first reference voltage and a second reference voltage. Therefore, the light generating part is turned on/off based on the second light to decrease the power consumption of the light generating part, and an operation of the light generating part is stabilized.
摘要:
In a display apparatus, a light generating part generates a first light in response to a driving signal, and a first driving part outputs a panel driving signal. A display panel receives the first light from the light generating part and a second light externally provided, and displays an image in response to the panel driving signal. A light sensing part is disposed in the display panel so as to output a sensing signal corresponding a light amount of the second light. A second driving part compares the sensing signal with a predetermined reference value, and outputs a driving signal in accordance with the compared result. Thus, the display apparatus may reduce an electrical power consumed to drive the display apparatus.
摘要:
The present invention provides a TFT array panel having a transmissive region and a reflective region. A transmissive electrode is disposed in the transmissive region. The first reflective electrode connected to the transmissive electrode is disposed on the reflective region. The second reflective electrode separated from the transmissive electrode and the first reflective region is formed in the reflective region. A first conductor is connected to at least one of the transmissive electrode and the first reflective electrode. A second conductor is connected to the second reflective electrode. At least one of the transmissive electrode, the first reflective electrode and the first conductor overlaps at least one of the second reflective electrode and the second conductor.
摘要:
The present invention provides a TFT array panel having a transmissive region and a reflective region. A transmissive electrode is disposed in the transmissive region. The first reflective electrode connected to the transmissive electrode is disposed on the reflective region. The second reflective electrode separated from the transmissive electrode and the first reflective region is formed in the reflective region. A first conductor is connected to at least one of the transmissive electrode and the first reflective electrode. A second conductor is connected to the second reflective electrode. At least one of the transmissive electrode, the first reflective electrode and the first conductor overlaps at least one of the second reflective electrode and the second conductor.
摘要:
A flexible self-expandable stent has inside and outside stent bodies each fabricated by knitting first and second super-elastic shape memory alloy wires into a net-like structure with the first wire zigzagged with a diagonal length P interlocked with the second wire zigzagged with a diagonal length 2P at a plurality of interlocked points with intersecting points therebetween to allow the stent bodies to apply force against longitudinal contraction of the stent bodies. The interlocked points and the intersecting points form a plurality of diamond-shaped meshes in the net-like structure of each stent body. A hollow rubber tube is closely fitted between the inside and outside stent bodies, with each of the overlapped ends of the rubber tube and the stent bodies being integrating into a single structure.
摘要:
Methods for fabricating semiconductor devices having capacitors are provided. A plurality of storage node electrodes are formed on a semiconductor substrate. Then, a capacitor dielectric layer is formed over the storage node electrodes. A plate electrode layer is subsequently formed on the capacitor dielectric layer. A hard mask layer is then formed on the resultant structure where the plate electrode layer is formed so as to fill a gap between the adjacent storage node electrodes. The hard mask layer and the plate electrode layer are successively patterned to form a plate electrode.
摘要:
A poly-silicon thin film transistor having LDD structure which has very low source/drain resistance is described. A TFT according to a preferred embodiment of the present invention, has, on a substrate, an active poly-silicon layer with a heavily-doped region on an outer peripheral thereof, a lightly doped region on ban inside the outer peripheral band and an un-doped region on a center part thereof. A gate insulating layer is comprised of a lower oxide layer, a nitride layer and an upper oxide layer. The lower oxide layer is formed over the whole active poly-silicon layer, but the nitride layer and the upper oxide layer are formed only on the un-doped portions of the active poly-silicon layer. A gate electrode is then formed on the upper oxide layer. A method for forming this structure is also described, which method uses a dry etch to remove the upper oxide layer and the nitride layer, but not the lower oxide layer prior to ion implantation of the active region.
摘要:
A method of fabricating a semiconductor device using a self-aligned metal shunt process is disclosed. The method can include sequentially forming a lower conductive pattern and a sacrificial pattern on a semiconductor substrate. An interlayer dielectric layer is formed to cover the sacrificial pattern. The interlayer dielectric layer is patterned to form a preliminary trench that exposes the top surface of the sacrificial pattern. The exposed sacrificial pattern is removed to form a trench that expose the top surface of the lower conductive pattern. An upper conductive pattern is formed to fill the trench.