公开(公告)号：US20080176374A1

公开(公告)日：2008-07-24

申请号：US12018469

申请日：2008-01-23

申请人： Yeol Jon ,  Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim

发明人： Yeol Jon ,  Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim

IPC分类号： H01L21/336 ,  H01L21/768

CPC分类号： H01L21/823437 ,  H01L21/76897 ,  H01L21/823475 ,  H01L21/823828 ,  H01L21/823871 ,  H01L27/11 ,  H01L29/66545

摘要： A method of fabricating a semiconductor device using a self-aligned metal shunt process is disclosed. The method can include sequentially forming a lower conductive pattern and a sacrificial pattern on a semiconductor substrate. An interlayer dielectric layer is formed to cover the sacrificial pattern. The interlayer dielectric layer is patterned to form a preliminary trench that exposes the top surface of the sacrificial pattern. The exposed sacrificial pattern is removed to form a trench that expose the top surface of the lower conductive pattern. An upper conductive pattern is formed to fill the trench.

摘要翻译： 公开了使用自对准金属分流工艺制造半导体器件的方法。 该方法可以包括在半导体衬底上顺序地形成下导电图案和牺牲图案。 形成层间电介质层以覆盖牺牲图案。 图案化层间电介质层以形成暴露牺牲图案的顶表面的预备沟槽。 去除暴露的牺牲图案以形成暴露下导电图案的顶表面的沟槽。 形成上部导电图案以填充沟槽。

公开(公告)号：US08419853B2

公开(公告)日：2013-04-16

申请号：US12623515

申请日：2009-11-23

申请人： Yun-Seung Kang ,  Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang

发明人： Yun-Seung Kang ,  Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang

IPC分类号： C30B21/04

CPC分类号： H01L29/66772 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/76879 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/481 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

摘要： A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.

摘要翻译： 公开了一种叠层半导体器件及其制造方法。 堆叠半导体器件包括具有部分地暴露衬底的开口的第一绝缘中间层，其中衬底包括单晶硅和填充开口的第一种子图案，其中第一种子图案具有设置在开口上方的上部， 并且上部部分与基板成锥形。 层叠半导体器件还包括形成在第一绝缘中间层上的第二绝缘中间层，其中暴露第一种子图案的上部的沟槽穿透第二绝缘夹层，以及填充沟槽的第一单晶硅结构。

公开(公告)号：US07585757B2

公开(公告)日：2009-09-08

申请号：US11446151

申请日：2006-06-05

申请人： Jong-Seon Ahn ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang ,  Eun-Kuk Chung ,  Hyung-Mo Yang ,  Chang-Yeon Yoo ,  Yun-Seung Kang ,  Kyung-Tae Jang

发明人： Jong-Seon Ahn ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang ,  Eun-Kuk Chung ,  Hyung-Mo Yang ,  Chang-Yeon Yoo ,  Yun-Seung Kang ,  Kyung-Tae Jang

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L23/53271 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.

摘要翻译： 在制造半导体器件的半导体器件和方法中，在绝缘层上形成防穿透膜图案和沟道膜图案。 穿透防止图案和绝缘层可以分别包括氮化物和氧化物。 穿透防止图案位于通道图案下方。

公开(公告)号：US20080087933A1

公开(公告)日：2008-04-17

申请号：US11905035

申请日：2007-09-27

申请人： Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang ,  Jong-Seon Ahn

发明人： Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang ,  Jong-Seon Ahn

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/11 ,  B82Y10/00 ,  H01L27/10873 ,  H01L27/10879 ,  H01L29/66795 ,  H01L29/785

摘要： Example embodiments relate to a semiconductor memory device including a channel layer pattern on a substrate, the channel layer pattern having a sidewall and an upper face, a spacer on the sidewall of the channel layer pattern, and a gate electrode covering the sidewall of the channel layer pattern, the spacer and the upper face of the channel layer pattern.

摘要翻译： 示例性实施例涉及包括衬底上的沟道层图案，沟道层图案具有侧壁和上表面的半导体存储器件，沟道层图案的侧壁上的间隔物，以及覆盖沟道侧壁的栅电极 层图案，间隔物和沟道层图案的上表面。

公开(公告)号：US20060281290A1

公开(公告)日：2006-12-14

申请号：US11446151

申请日：2006-06-05

申请人： Jong-Seon Ahn ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang ,  Eun-Kuk Chung ,  Hyung-Mo Yang ,  Chang-Yeon Yoo ,  Yun-Seung Kang ,  Kyung-Tae Jang

发明人： Jong-Seon Ahn ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang ,  Eun-Kuk Chung ,  Hyung-Mo Yang ,  Chang-Yeon Yoo ,  Yun-Seung Kang ,  Kyung-Tae Jang

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L23/53271 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.

公开(公告)号：US07682450B2

公开(公告)日：2010-03-23

申请号：US11485323

申请日：2006-07-13

申请人： Yun-Seung Kang ,  Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang

发明人： Yun-Seung Kang ,  Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang

IPC分类号： C30B21/02

CPC分类号： H01L29/66772 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/76879 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/481 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

摘要： A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.

摘要翻译： 公开了一种叠层半导体器件及其制造方法。 堆叠半导体器件包括具有部分地暴露衬底的开口的第一绝缘中间层，其中衬底包括单晶硅，以及填充开口的第一种子图案，其中第一种子图案具有设置在开口上方的上部， 并且上部部分与基板成锥形。 层叠半导体器件还包括形成在第一绝缘中间层上的第二绝缘中间层，其中暴露第一种子图案的上部的沟槽穿透第二绝缘夹层，以及填充沟槽的第一单晶硅结构。

公开(公告)号：US20070023794A1

公开(公告)日：2007-02-01

申请号：US11485323

申请日：2006-07-13

申请人： Yun-Seung Kang ,  Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang

发明人： Yun-Seung Kang ,  Eun-Kuk Chung ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/66772 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/76879 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/481 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

摘要： A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.

摘要翻译： 公开了一种叠层半导体器件及其制造方法。 堆叠半导体器件包括具有部分地暴露衬底的开口的第一绝缘中间层，其中衬底包括单晶硅和填充开口的第一种子图案，其中第一种子图案具有设置在开口上方的上部， 并且上部部分与基板成锥形。 层叠半导体器件还包括形成在第一绝缘中间层上的第二绝缘中间层，其中暴露第一种子图案的上部的沟槽穿透第二绝缘夹层，以及填充沟槽的第一单晶硅结构。

公开(公告)号：US07683987B2

公开(公告)日：2010-03-23

申请号：US11209863

申请日：2005-08-24

申请人： Young-Chol Yang ,  Chong-Chul Chai ,  Jeong-Ye Choi ,  Jin-Oh Kwag ,  Jin-Hong Kim ,  Sang-Il Kim ,  Mun-Pyo Hong ,  Nam-Seok Roh

发明人： Young-Chol Yang ,  Chong-Chul Chai ,  Jeong-Ye Choi ,  Jin-Oh Kwag ,  Jin-Hong Kim ,  Sang-Il Kim ,  Mun-Pyo Hong ,  Nam-Seok Roh

IPC分类号： G02F1/1335 ,  G02F1/1343

CPC分类号： G02F1/133555 ,  G02F2001/134345 ,  G02F2001/134354

摘要： The present invention provides a TFT array panel having a transmissive region and a reflective region. A transmissive electrode is disposed in the transmissive region. The first reflective electrode connected to the transmissive electrode is disposed on the reflective region. The second reflective electrode separated from the transmissive electrode and the first reflective region is formed in the reflective region. A first conductor is connected to at least one of the transmissive electrode and the first reflective electrode. A second conductor is connected to the second reflective electrode. At least one of the transmissive electrode, the first reflective electrode and the first conductor overlaps at least one of the second reflective electrode and the second conductor.

摘要翻译： 本发明提供一种具有透射区域和反射区域的TFT阵列面板。 透射电极设置在透射区域中。 连接到透射电极的第一反射电极设置在反射区域上。 在反射区域中形成与透射电极和第一反射区域分离的第二反射电极。 第一导体与透射电极和第一反射电极中的至少一个连接。 第二导体连接到第二反射电极。 透射电极，第一反射电极和第一导体中的至少一个与第二反射电极和第二导体中的至少一个重叠。

公开(公告)号：US07675501B2

公开(公告)日：2010-03-09

申请号：US11013568

申请日：2004-12-16

申请人： Kyoung-Ju Shin ,  Chong-Chul Chai ,  Cheol-Woo Park ,  Sang-Il Kim ,  Jin-Hong Kim ,  Mun-Pyo Hong

发明人： Kyoung-Ju Shin ,  Chong-Chul Chai ,  Cheol-Woo Park ,  Sang-Il Kim ,  Jin-Hong Kim ,  Mun-Pyo Hong

IPC分类号： G09G3/36

CPC分类号： G09G3/3406 ,  G09G3/3688 ,  G09G2330/021 ,  G09G2360/144 ,  G09G2360/145

摘要： In a display apparatus, a light generating part generates a first light in response to a driving signal, and a first driving part outputs a panel driving signal. A display panel receives the first light from the light generating part and a second light externally provided, and displays an image in response to the panel driving signal. A light sensing part is disposed in the display panel so as to output a sensing signal corresponding a light amount of the second light. A second driving part compares the sensing signal with a predetermined reference value, and outputs a driving signal in accordance with the compared result. Thus, the display apparatus may reduce an electrical power consumed to drive the display apparatus.

摘要翻译： 在显示装置中，发光部根据驱动信号产生第一光，第一驱动部输出面板驱动信号。 显示面板接收来自发光部的第一光和外部设置的第二光，并响应于面板驱动信号显示图像。 光检测部件设置在显示面板中，以输出对应于第二光的光量的感测信号。 第二驱动部件将感测信号与预定参考值进行比较，并根据比较结果输出驱动信号。 因此，显示装置可以减少驱动显示装置所消耗的电力。

公开(公告)号：US07466302B2

公开(公告)日：2008-12-16

申请号：US10949068

申请日：2004-09-24

申请人： Jin-Hong Kim ,  Cheol-Woo Park ,  Chong-Chul Chai ,  Kyoung-Ju Shin

发明人： Jin-Hong Kim ,  Cheol-Woo Park ,  Chong-Chul Chai ,  Kyoung-Ju Shin

IPC分类号： G09G3/36

CPC分类号： G09G3/3406 ,  G09G3/3677 ,  G09G2320/0626 ,  G09G2330/021 ,  G09G2360/144

摘要： A light generating part generates a first light based on a first control signal. A first driving part outputs a panel driving signal. A display panel receives the first light or a second light that is provided from an exterior to display an image based on the panel driving signal. A sensing part outputs a sensing signal based on the second light. A second driving part compares a reference voltage range with the sensing signal to output the first control signal. The reference voltage range is determined by a first reference voltage and a second reference voltage. Therefore, the light generating part is turned on/off based on the second light to decrease the power consumption of the light generating part, and an operation of the light generating part is stabilized.

摘要翻译： 光产生部分基于第一控制信号产生第一光。 第一驱动部输出面板驱动信号。 显示面板接收从外部提供的第一光或第二光，以基于面板驱动信号显示图像。 感测部分输出基于第二光的感测信号。 第二驱动部件将参考电压范围与感测信号进行比较，以输出第一控制信号。 参考电压范围由第一参考电压和第二参考电压确定。 因此，基于第二光来导通/关闭发光部，以降低发光部的功耗，并且使光产生部的动作稳定。