Abstract:
The magnetization rotation element includes: a spin-orbit torque wiring; and a first ferromagnetic layer which is stacked on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a plurality of wiring layers, and wherein, in a cross section orthogonal to a length direction of the spin-orbit torque wiring, a product between a cross-sectional area and a resistivity of each of the wiring layers is larger in the wiring layer closer to the first ferromagnetic layer.
Abstract:
This spin-orbit torque type magnetization rotational element (10) is provided with: a spin-orbit torque wiring (2); a first ferromagnetic layer (1) that is laminated on the spin-orbit torque wiring; a first nonmagnetic metal layer (3) and a second nonmagnetic metal layer (4) that are connected to the spin-orbit torque wiring at positions flanking the first ferromagnetic layer in a plan view from the second direction, and a first insulating layer (31) surrounding the spin-orbit torque wiring, wherein the gravity center (G) of the first ferromagnetic layer is positioned on a side closer to the first nonmagnetic metal layer or the second nonmagnetic metal layer than is a reference point (S) located at the center between the first and second nonmagnetic metal layers in the first direction, and the first insulating layer is any one selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide, and magnesium oxide.
Abstract:
A spin-orbit torque type magnetization rotational element includes; a spin-orbit torque wiring that extends in a first direction; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring; and a first nonmagnetic metal layer and a second nonmagnetic metal layer that are connected to the spin-orbit torque wiring at positions flanking the first ferromagnetic layer in the first direction in a plan view from the second direction, wherein the gravity center of the first ferromagnetic layer is positioned on a side closer to the first nonmagnetic metal layer or the second nonmagnetic metal layer than is a reference point located at the center between the first and second nonmagnetic metal layers in the first direction.
Abstract:
A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.
Abstract:
A polarization converter of the invention includes a core part that wave-guides an electromagnetic wave and a cladding part that is provided around the core part. The core part includes a conversion part converting a polarization state of the electromagnetic wave. A cross-sectional shape of the conversion part in a plane orthogonal to a propagation direction of the electromagnetic wave is a shape formed by cutting off a portion of a rectangular or square shape along a jagged diagonal line.
Abstract:
A magnetoresistance effect element includes: a laminate body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring connected to the laminate body. A second surface opposite to a first surface of the spin-orbit torque wiring in contact with the laminate body is curved in a first direction orthogonal to a direction in which the laminate body is laminated.
Abstract:
A thermistor element includes: a thermistor film; a first electrode provided in contact with one surface of the thermistor film; and a pair of second electrodes provided in contact with an other surface of the thermistor film, wherein the thermistor film is provided to cover a periphery of the first electrode.
Abstract:
A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.
Abstract:
Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.
Abstract:
A magnetoresistance effect element according to an embodiment includes: a spin orbit torque wiring extending in a first direction; a laminated body laminated on the spin orbit torque wiring and having a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; a conductive layer in contact with a side of the laminated body opposite to the spin orbit torque wiring; and a heat dissipation layer separated from the laminated body in the first direction and connected to the spin orbit torque wiring and the conductive layer.