公开(公告)号：US20180159020A1

公开(公告)日：2018-06-07

申请号：US15831630

申请日：2017-12-05

Applicant: TDK CORPORATION

Inventor： Hitoshi SAKUMA ,  Tomohisa AZUMA ,  Kenta ISHII

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/18 ,  H01L41/113 ,  B41J2/14

CPC classification number: H01L41/0815 ,  B41J2/14201 ,  B41J2/14233 ,  B41J2202/03 ,  G11B5/483 ,  G11B21/10 ,  H01L41/0477 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/1132 ,  H01L41/18 ,  H01L41/1873 ,  H01L41/316

Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first oxide layer stacked on the first electrode layer, a second oxide layer stacked on the first oxide layer, and a piezoelectric thin film stacked on the second oxide layer, the electrical resistivity of the first oxide layer is higher than the electrical resistivity of the second oxide layer, the first oxide layer includes K, Na, and Nb, and the piezoelectric thin film includes (K,Na)NbO3.

公开(公告)号：US20150207057A1

公开(公告)日：2015-07-23

申请号：US14162211

申请日：2014-01-23

Applicant: TDK CORPORATION

Inventor： Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

IPC: H01L41/047 ,  G11B5/48 ,  B41J2/14

CPC classification number: H01L41/0475 ,  B41J2/14201 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1646 ,  B41J2002/14491 ,  B41J2202/11 ,  B41J2202/20 ,  G11B5/4873 ,  G11B21/24 ,  H01L41/047 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/29 ,  H01L41/316 ,  H01L41/332

Abstract: An object is to increase the amount of displacement of a thin-film piezoelectric element including a piezoelectric thin film having an uneven-shaped contact surface with the planar shape and the layer structure of the thin-film piezoelectric element kept unchanged. The thin-film piezoelectric element includes a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, in which a surface roughness P-V of an interface between the piezoelectric thin film and at least one of the pair of electrode layers is 220 nm or more and 500 nm or less.

Abstract translation: 本发明的目的是增加包括具有平面形状的不平坦形状的接触表面的压电薄膜和薄膜压电元件的层结构保持不变的薄膜压电元件的位移量。 薄膜压电元件包括​​夹在一对电极层之间的一对电极层和压电薄膜，其中压电薄膜与一对电极层中的至少一个之间的界面的表面粗糙度PV为 220nm以上且500nm以下。

公开(公告)号：US20140339961A1

公开(公告)日：2014-11-20

申请号：US13898110

申请日：2013-05-20

Applicant: TDK CORPORATION

Inventor： Kazuhiko MAEJIMA ,  Yasuhiro AIDA ,  Yoshitomo TANAKA ,  Katsuyuki KURACHI ,  Hitoshi SAKUMA

IPC: H01L41/08 ,  H01L41/187

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2202/03 ,  G01C19/5621 ,  G01C19/5628 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract translation: 根据本发明的薄膜压电元件包括​​具有多个晶粒在膜厚度方向上存在的结构的铌酸钾钠薄膜; 和一对夹着铌酸钾钠薄膜的电极膜。 当铌酸钾薄膜在膜厚度方向上分为相同厚度的三个区域并确定各个区域的平均晶粒尺寸A1，A2和A3时，最小平均晶粒的比率m / M A1，A2和A3之间的尺寸m为A1，A2和A3之间的最大平均晶粒尺寸M为10％至80％。 具有最小平均晶粒尺寸m的区域紧邻该对电极膜中的一个。

公开(公告)号：US20140265724A1

公开(公告)日：2014-09-18

申请号：US13827364

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Yoshitomo TANAKA ,  Hitoshi SAKUMA ,  Katsuyuki KURACHI ,  Kazuhiko MAEJIMA

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract translation: 作为压电元件，压电元件包括​​作为A（A）部位和B部位的Ta（钽）被替代的通式ABO3表示的钙钛矿型化合物钠铌酸钾的薄膜。 因此，提供压电元件以增加使用铌酸钾钠薄膜的压电元件的可靠性，并提高压电元件的压电特性。