Abstract:
A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first oxide layer stacked on the first electrode layer, a second oxide layer stacked on the first oxide layer, and a piezoelectric thin film stacked on the second oxide layer, the electrical resistivity of the first oxide layer is higher than the electrical resistivity of the second oxide layer, the first oxide layer includes K, Na, and Nb, and the piezoelectric thin film includes (K,Na)NbO3.
Abstract:
A piezoelectric ceramic with environmental friendliness including a composition as the main component composed of a composite oxide free from lead (Pb) as a constituent element, and with excellent piezoelectric characteristics such as the relative dielectric constant, the electromechanical coupling factor, and the piezoelectric constant, and a piezoelectric device using the piezoelectric ceramic, are provided. A piezoelectric ceramic including a composition represented by the following general formula as the main component: (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTaz-Zru)O3 (wherein, x, y, z, w, v, u and m in the formula satisfy the following conditions respectively: 0.4
Abstract:
A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 μm and not larger than 30 μm.
Abstract:
A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.
Abstract:
A piezoelectric device includes a first electrode film, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. At least one of the first and second electrode films is composed of an alloy, and a main component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. The piezoelectric film has a main composition represented by (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTazZru)O3 (1), where x, y, z, w, v, u, and m in formula (1) satisfy 0.4
Abstract:
A piezoelectric ceramic contains a major proportion of potassium sodium niobate and has a carbon content after firing of 55 to 1,240 ppm by mass.