公开(公告)号：US20150194592A1

公开(公告)日：2015-07-09

申请号：US13687785

申请日：2012-11-28

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Katsuyuki KURACHI ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

IPC: H01L41/08 ,  H01L41/18

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2202/03 ,  G01C19/5607 ,  G01L9/008 ,  G11B5/483 ,  G11B5/4873 ,  H01L41/0973 ,  H01L41/18 ,  H01L41/1873 ,  H01L41/316

Abstract: An object is to reduce the leakage current of a piezoelectric element including a potassium-sodium niobate thin film, enhance the reliability of the piezoelectric element and, in addition, enhance the withstand voltage by including a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers, wherein the above-described piezoelectric layer is provided with at least one layer each of first piezoelectric layer which is a potassium-sodium niobate thin film substantially not containing Mn (manganese) and second piezoelectric layer which is a potassium-sodium niobate thin film containing Mn.

Abstract translation: 本发明的目的是减少包含铌酸钾钠薄膜的压电元件的泄漏电流，提高压电元件的可靠性，另外通过包括一对电极和夹在 上述一对电极层，其中上述压电层设置有至少一层第一压电层，第一压电层是基本不含Mn（锰）的铌酸钾钠薄膜和第二压电层，第二压电层为 含铌酸钾钠薄膜。

公开(公告)号：US20140145555A1

公开(公告)日：2014-05-29

申请号：US14047649

申请日：2013-10-07

Applicant: TDK CORPORATION

Inventor： Katsuyuki KURACHI ,  Yasuhiro AIDA ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

IPC: H01L41/18

CPC classification number: A61B5/02444 ,  B41J2/14233 ,  B41J2202/03 ,  G01C19/5621 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/316

Abstract: There are provided a thin-film piezoelectric element including a piezoelectric thin film which has an alkali niobate-based perovskite structure represented by the composition formula (K1-w-xNawSrx)m(Nb1-yZry)O3 and which is preferentially oriented to (001), and a pair of electrode films that sandwich the piezoelectric thin film, a thin-film piezoelectric actuator, and a thin-film piezoelectric sensor each including the thin-film piezoelectric element.

Abstract translation: 提供了一种薄膜压电元件，其包括具有由组成式（K1-w-xNawSrx）m（Nb1-yZry）O3表示的碱铌酸酯基钙钛矿结构的压电薄膜，其优先取向为（001 ）和夹着压电薄膜的一对电极膜，薄膜压电致动器和薄膜压电传感器，每个薄膜压电传感器都包括薄膜压电元件。

公开(公告)号：US20140084749A1

公开(公告)日：2014-03-27

申请号：US13624573

申请日：2012-09-21

Applicant: TDK CORPORATION

Inventor： Hitoshi SAKUMA ,  Yasuhiro AIDA ,  Katsuyuki KURACHI ,  Kazuhiko MAEJIMA

IPC: H01L41/18

CPC classification number: H01L41/18 ,  G01C19/5621 ,  G01C19/5628 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric device according to the present invention includes a pair of electrode layers and a piezoelectric thin film interposed between the pair of electrode layers, wherein the piezoelectric thin film contains a rare gas element and has a content gradient of the rare gas element in the thickness direction of the piezoelectric thin film.

Abstract translation: 根据本发明的薄膜压电装置包括一对电极层和介于一对电极层之间的压电薄膜，其中压电薄膜含有稀有气体元素，并且具有稀有气体元素的含量梯度 压电薄膜的厚度方向。

公开(公告)号：US20150207057A1

公开(公告)日：2015-07-23

申请号：US14162211

申请日：2014-01-23

Applicant: TDK CORPORATION

Inventor： Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

IPC: H01L41/047 ,  G11B5/48 ,  B41J2/14

CPC classification number: H01L41/0475 ,  B41J2/14201 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1646 ,  B41J2002/14491 ,  B41J2202/11 ,  B41J2202/20 ,  G11B5/4873 ,  G11B21/24 ,  H01L41/047 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/29 ,  H01L41/316 ,  H01L41/332

Abstract: An object is to increase the amount of displacement of a thin-film piezoelectric element including a piezoelectric thin film having an uneven-shaped contact surface with the planar shape and the layer structure of the thin-film piezoelectric element kept unchanged. The thin-film piezoelectric element includes a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, in which a surface roughness P-V of an interface between the piezoelectric thin film and at least one of the pair of electrode layers is 220 nm or more and 500 nm or less.

Abstract translation: 本发明的目的是增加包括具有平面形状的不平坦形状的接触表面的压电薄膜和薄膜压电元件的层结构保持不变的薄膜压电元件的位移量。 薄膜压电元件包括​​夹在一对电极层之间的一对电极层和压电薄膜，其中压电薄膜与一对电极层中的至少一个之间的界面的表面粗糙度PV为 220nm以上且500nm以下。

公开(公告)号：US20140339961A1

公开(公告)日：2014-11-20

申请号：US13898110

申请日：2013-05-20

Applicant: TDK CORPORATION

Inventor： Kazuhiko MAEJIMA ,  Yasuhiro AIDA ,  Yoshitomo TANAKA ,  Katsuyuki KURACHI ,  Hitoshi SAKUMA

IPC: H01L41/08 ,  H01L41/187

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2202/03 ,  G01C19/5621 ,  G01C19/5628 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract translation: 根据本发明的薄膜压电元件包括​​具有多个晶粒在膜厚度方向上存在的结构的铌酸钾钠薄膜; 和一对夹着铌酸钾钠薄膜的电极膜。 当铌酸钾薄膜在膜厚度方向上分为相同厚度的三个区域并确定各个区域的平均晶粒尺寸A1，A2和A3时，最小平均晶粒的比率m / M A1，A2和A3之间的尺寸m为A1，A2和A3之间的最大平均晶粒尺寸M为10％至80％。 具有最小平均晶粒尺寸m的区域紧邻该对电极膜中的一个。

公开(公告)号：US20140265724A1

公开(公告)日：2014-09-18

申请号：US13827364

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Yoshitomo TANAKA ,  Hitoshi SAKUMA ,  Katsuyuki KURACHI ,  Kazuhiko MAEJIMA

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract translation: 作为压电元件，压电元件包括​​作为A（A）部位和B部位的Ta（钽）被替代的通式ABO3表示的钙钛矿型化合物钠铌酸钾的薄膜。 因此，提供压电元件以增加使用铌酸钾钠薄膜的压电元件的可靠性，并提高压电元件的压电特性。

公开(公告)号：US20180076379A1

公开(公告)日：2018-03-15

申请号：US15800873

申请日：2017-11-01

Applicant: TDK CORPORATION

Inventor： Katsuyuki KURACHI ,  Hitoshi SAKUMA ,  Yasuhiro AIDA ,  Kazuhiko MAEJIMA ,  Mayumi NAKAJIMA

IPC: H01L41/08 ,  H01L41/047

CPC classification number: H01L41/0815 ,  H01L41/0477

Abstract: A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure.

公开(公告)号：US20140265723A1

公开(公告)日：2014-09-18

申请号：US13827126

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Yoshitomo TANAKA ,  Hitoshi SAKUMA ,  Katsuyuki KURACHI ,  Kazuhiko MAEJIMA

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Abstract translation: 压电元件作为压电体层包含作为由通式ABO3表示的钙钛矿化合物的铌酸钾钠的薄膜，其中Sr（锶）在A位置和B位都被取代，Mn（ 锰）仅在A位置上被取代。 因此，提供了使用铌酸钾钠薄膜来降低压电元件的泄漏电流的压电元件，以提高其耐压并提高其压电特性。

公开(公告)号：US20150109372A1

公开(公告)日：2015-04-23

申请号：US14058912

申请日：2013-10-21

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Ryu OHTA ,  Yoshitomo TANAKA ,  Hiroshi CHIHARA ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

IPC: H01L41/08 ,  G01L1/16 ,  B41J2/045 ,  H01L41/187

CPC classification number: H01L41/0805 ,  B41J2/045 ,  B41J2/14233 ,  B41J2202/03 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0973 ,  H01L41/1873 ,  H01L41/316

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Abstract translation: 可以增加作为致动器的位移或作为压电元件的传感器的灵敏度，并且另外可以通过提供作为钙钛矿型化合物的铌酸钾钠的薄膜来降低电力消耗， 通式ABO3作为压电层，其中铌酸钾钠的晶体结构的晶体取向作为整体压电层的面内四重对称，其中旋转对称的第一轴是压电层的厚度方向。

公开(公告)号：US20140084754A1

公开(公告)日：2014-03-27

申请号：US13624572

申请日：2012-09-21

Applicant: TDK CORPORATION

Inventor： Kazuhiko MAEJIMA ,  Katsuyuki KURACHI ,  Hitoshi SAKUMA ,  Yasuhiro AIDA ,  Yoshitomo TANAKA

IPC: H01L41/04 ,  H01L41/187

CPC classification number: H01L41/04 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric device according to the present invention includes a potassium sodium niobate-based piezoelectric thin film having an average crystal grain diameter of 60 nm or more and 90 nm or less, and a pair of electrode films configured to hold the piezoelectric thin film therebetween.

Abstract translation: 根据本发明的薄膜压电装置包括平均晶粒直径为60nm以上且90nm以下的磷酸铌酸钾系压电薄膜，以及配置成保持压电薄膜的一对电极薄膜 之间。