公开(公告)号：US20170288128A1

公开(公告)日：2017-10-05

申请号：US15466344

申请日：2017-03-22

Applicant: TDK CORPORATION

Inventor： Tomohisa AZUMA ,  Masaru NANAO ,  Tatsuji SANO ,  Masahito FURUKAWA ,  Kenta ISHII

IPC: H01L41/187 ,  H01L41/297 ,  C23C14/08 ,  H01L41/047 ,  H01J37/34 ,  C23C14/34

CPC classification number: H01L41/1873 ,  C23C14/088 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3426 ,  H01L41/0471 ,  H01L41/297 ,  H01L41/316

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

公开(公告)号：US20180159020A1

公开(公告)日：2018-06-07

申请号：US15831630

申请日：2017-12-05

Applicant: TDK CORPORATION

Inventor： Hitoshi SAKUMA ,  Tomohisa AZUMA ,  Kenta ISHII

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/18 ,  H01L41/113 ,  B41J2/14

CPC classification number: H01L41/0815 ,  B41J2/14201 ,  B41J2/14233 ,  B41J2202/03 ,  G11B5/483 ,  G11B21/10 ,  H01L41/0477 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/1132 ,  H01L41/18 ,  H01L41/1873 ,  H01L41/316

Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first oxide layer stacked on the first electrode layer, a second oxide layer stacked on the first oxide layer, and a piezoelectric thin film stacked on the second oxide layer, the electrical resistivity of the first oxide layer is higher than the electrical resistivity of the second oxide layer, the first oxide layer includes K, Na, and Nb, and the piezoelectric thin film includes (K,Na)NbO3.

公开(公告)号：US20200212286A1

公开(公告)日：2020-07-02

申请号：US16719009

申请日：2019-12-18

Applicant: TDK Corporation

Inventor： Kenta ISHII ,  Masaru NANAO ,  Hitoshi SAKUMA ,  Takao NOGUCHI

IPC: H01L41/047 ,  H01L41/08 ,  C23C16/48 ,  C23C16/40 ,  C23C16/06 ,  C23C14/08 ,  C23C14/34

Abstract: A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

公开(公告)号：US20180159019A1

公开(公告)日：2018-06-07

申请号：US15830646

申请日：2017-12-04

Applicant: TDK CORPORATION

Inventor： Masaru NANAO ,  Kouhei OHHASHI ,  Kenta ISHII

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/113 ,  B41J2/14

CPC classification number: H01L41/0815 ,  B41J2/14201 ,  B41J2/14233 ,  B41J2202/03 ,  G11B5/483 ,  G11B5/4873 ,  H01L41/0477 ,  H01L41/0973 ,  H01L41/1132 ,  H01L41/1873 ,  H01L41/22

Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first intermediate layer stacked on the first electrode layer, a second intermediate layer stacked on the first intermediate layer, and a piezoelectric thin film stacked on the second intermediate layer, the first intermediate layer includes K, Na, and Nb, the second intermediate layer is a layer causing stress in a compression direction in the piezoelectric thin film, and the piezoelectric thin film includes (K,Na)NbO3.

公开(公告)号：US20170288127A1

公开(公告)日：2017-10-05

申请号：US15470314

申请日：2017-03-27

Applicant: TDK CORPORATION

Inventor： Tomohisa AZUMA ,  Masaru NANAO ,  Kenta ISHII

IPC: H01L41/18 ,  H01L41/08 ,  H01L41/047

CPC classification number: H01L41/18 ,  C23C14/088 ,  C23C14/165 ,  C23C14/3414 ,  H01L41/047 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 μm and not larger than 30 μm.