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公开(公告)号：US10483458B2
公开(公告)日：2019-11-19
申请号：US15764848
申请日：2016-06-02
Applicant: TDK CORPORATION
Inventor： Junichiro Urabe , Tetsuya Shibata , Atsushi Shimura , Takekazu Yamane , Tsuyoshi Suzuki
Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.
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Patent Agency Ranking
公开(公告)号：US10332666B2
公开(公告)日：2019-06-25
申请号：US15962286
申请日：2018-04-25
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Junichiro Urabe , Tsuyoshi Suzuki , Atsushi Shimura
Abstract: The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.
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公开(公告)号：US10957962B2
公开(公告)日：2021-03-23
申请号：US16340471
申请日：2017-10-23
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Tetsuya Shibata , Tsuyoshi Suzuki , Junichiro Urabe , Atsushi Shimura
Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.
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公开(公告)号：US10608309B2
公开(公告)日：2020-03-31
申请号：US15962587
申请日：2018-04-25
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Junichiro Urabe , Tsuyoshi Suzuki , Atsushi Shimura
Abstract: A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.
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公开(公告)号：US10381997B2
公开(公告)日：2019-08-13
申请号：US15870243
申请日：2018-01-12
Applicant: TDK CORPORATION
Inventor： Tetsuya Shibata , Junichiro Urabe , Atsushi Shimura , Takekazu Yamane
Abstract: A high-frequency filter includes at least one magnetoresistive effect element; a first port through which a high-frequency signal is input; a second port through which a high-frequency signal is output; and a signal line.
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公开(公告)号：US09948267B2
公开(公告)日：2018-04-17
申请号：US15439640
申请日：2017-02-22
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Tetsuya Shibata , Junichiro Urabe , Atsushi Shimura
Abstract: A magnetoresistive effect device includes at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer, a first port, a second port, a first signal line which is connected to the first port and through which high-frequency current corresponding to a high-frequency signal input into the first port flows, a second signal line, and a direct-current input terminal. The magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer. The magnetoresistive effect element is connected to the second port via the second signal line. The direct-current input terminal is connected to the magnetoresistive effect element.
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