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公开(公告)号：US11840757B2
公开(公告)日：2023-12-12
申请号：US17348238
申请日：2021-06-15
Applicant: TDK CORPORATION
Inventor： Tsuyoshi Suzuki , Katsuyuki Nakada , Tomoyuki Sasaki
IPC: C23C14/54 , C23C16/52 , G06F30/27 , C23C14/34 , G06F111/10
CPC classification number: C23C14/54 , C23C14/34 , C23C16/52 , G06F30/27 , G06F2111/10
Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
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公开(公告)号：US10756404B2
公开(公告)日：2020-08-25
申请号：US16262358
申请日：2019-01-30
Applicant: TDK CORPORATION
Inventor： Tsuyoshi Suzuki , Shinji Hara
IPC: H01P1/218
Abstract: A magnetoresistance effect device includes first and second ports, first and second circuit units, and reference potential and DC applying terminals. The first and second circuit units respectively include first and second magnetoresistance effect elements and first and second conductors. In the second conductor, the positional relationship between first and second end faces respectively on the first and opposite conductor sides in the first magnetoresistance effect element with respect to a flowing direction of a direct current flowing inside the first magnetoresistance effect element and the positional relationship between first and second end faces respectively on the second and opposite conductor sides in the second magnetoresistance effect element with respect to a flowing direction of a direct current flowing in the second magnetoresistance effect element are opposite each other. The relative angle between the first and second circuit units in a predetermined cross product direction is 90 degrees or less.
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公开(公告)号：US10593459B2
公开(公告)日：2020-03-17
申请号：US16306935
申请日：2017-09-14
Applicant: TDK CORPORATION
Inventor： Tsuyoshi Suzuki
Abstract: A magnetoresistance effect device includes: a first magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer, and a first spacer layer, a metal layer, a first electrode, an input terminal, an output terminal, and a reference potential terminal, wherein the first ferromagnetic layer, the first spacer layer, the second ferromagnetic layer, and the first electrode are disposed in this order, the second ferromagnetic layer is in electrical contact with the first electrode, which is connected to the output terminal configured to output a high-frequency signal, the metal layer is connected to the input and reference potential terminals so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal, which is in electrical contact with the first ferromagnetic layer, and the first magnetoresistance effect element has an application terminal configured to apply a DC current or a DC voltage.
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公开(公告)号：US10483458B2
公开(公告)日：2019-11-19
申请号：US15764848
申请日：2016-06-02
Applicant: TDK CORPORATION
Inventor： Junichiro Urabe , Tetsuya Shibata , Atsushi Shimura , Takekazu Yamane , Tsuyoshi Suzuki
Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.
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公开(公告)号：US10332666B2
公开(公告)日：2019-06-25
申请号：US15962286
申请日：2018-04-25
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Junichiro Urabe , Tsuyoshi Suzuki , Atsushi Shimura
Abstract: The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.
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Patent Agency Ranking
公开(公告)号：US10957962B2
公开(公告)日：2021-03-23
申请号：US16340471
申请日：2017-10-23
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Tetsuya Shibata , Tsuyoshi Suzuki , Junichiro Urabe , Atsushi Shimura
Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.
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公开(公告)号：US10608309B2
公开(公告)日：2020-03-31
申请号：US15962587
申请日：2018-04-25
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Junichiro Urabe , Tsuyoshi Suzuki , Atsushi Shimura
Abstract: A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.
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公开(公告)号：US09595916B2
公开(公告)日：2017-03-14
申请号：US14515864
申请日：2014-10-16
Applicant: TDK CORPORATION
Inventor： Tsuyoshi Suzuki , Eiji Suzuki
CPC classification number: H03B15/006 , H03B15/00
Abstract: A magnetoresistive effect oscillator is provided which can realize a rise or a fall of oscillation at a higher speed. In the magnetoresistive effect oscillator, at the rise, a current having a first current density, which is larger than a critical current density for oscillation, is applied, and thereafter a current having a second current density, which is less than the current density corresponding to the first current density and not less than the critical current density for oscillation, is applied such that the magnetoresistive effect element oscillates at a predetermined frequency. In the magnetoresistive effect oscillator, at the fall, starting from the state where a first current density is applied to hold the magnetoresistive effect element in an oscillating condition, a current having a second current density and having polarity reversed to that of the first current density is applied such that the oscillation disappears.
Abstract translation: 提供了一种能够以更高速度实现振荡的上升或下降的磁阻效应振荡器。 在磁阻效应振荡器中，在上升时，施加具有比用于振荡的临界电流密度大的第一电流密度的电流，之后具有小于对应于电流密度的第二电流密度的电流 施加到第一电流密度并且不小于用于振荡的临界电流密度，使得磁阻效应元件以预定频率振荡。 在磁阻效应振荡器中，在从施加第一电流密度的状态开始的磁阻效应振荡器中，将磁阻效应元件保持在振荡状态，具有第二电流密度并具有与第一电流密度相反的极性的电流 以使得振荡消失。
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公开(公告)号：US12274184B2
公开(公告)日：2025-04-08
申请号：US17631571
申请日：2020-06-24
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Tsuyoshi Suzuki , Katsuyuki Nakada , Tomoyuki Sasaki
Abstract: In the magnetoresistance effect element according to one aspect, the metal oxide constituting the metal oxide layer has the ratio of oxygen higher than the total ratio of metal when the composition is expressed in the stoichiometric composition; and the resistivity of the metal oxide layer is higher than that of the tunnel barrier layer.
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公开(公告)号：US11728082B2
公开(公告)日：2023-08-15
申请号：US17214081
申请日：2021-03-26
Applicant: TDK CORPORATION
Inventor： Tsuyoshi Suzuki , Shinto Ichikawa , Katsuyuki Nakada
CPC classification number: H01F10/3254 , G11B5/3909 , G11B5/3967 , H03H7/258
Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, wherein a crystal structure of the non-magnetic layer is a spinel structure, wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W.
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