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公开(公告)号：US10804870B2
公开(公告)日：2020-10-13
申请号：US16874067
申请日：2020-05-14
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane
Abstract: Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.
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公开(公告)号：US10483458B2
公开(公告)日：2019-11-19
申请号：US15764848
申请日：2016-06-02
Applicant: TDK CORPORATION
Inventor： Junichiro Urabe , Tetsuya Shibata , Atsushi Shimura , Takekazu Yamane , Tsuyoshi Suzuki
Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.
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公开(公告)号：US10439592B2
公开(公告)日：2019-10-08
申请号：US16048034
申请日：2018-07-27
Applicant: TDK CORPORATION
Inventor： Naomichi Degawa , Takekazu Yamane
Abstract: A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.
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公开(公告)号：US10332666B2
公开(公告)日：2019-06-25
申请号：US15962286
申请日：2018-04-25
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Junichiro Urabe , Tsuyoshi Suzuki , Atsushi Shimura
Abstract: The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.
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公开(公告)号：US10074688B2
公开(公告)日：2018-09-11
申请号：US15662697
申请日：2017-07-28
Applicant: TDK CORPORATION
Inventor： Tetsuya Shibata , Tsuyoshi Suzuki , Junichiro Urabe , Takekazu Yamane , Atsushi Shimura
CPC classification number: H01L27/22 , G11B5/3903 , G11B5/3945 , H01L43/02 , H01L43/08 , H03H1/0007 , H03H2/00 , H03H7/0153
Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.
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Patent Agency Ranking
公开(公告)号：US09906199B2
公开(公告)日：2018-02-27
申请号：US15066350
申请日：2016-03-10
Applicant: TDK CORPORATION
Inventor： Tetsuya Shibata , Junichiro Urabe , Atsushi Shimura , Takekazu Yamane
CPC classification number: H03H1/0007 , H01L43/00 , H01L43/08 , H03H2/00 , H03H2001/0057 , H03H2001/0085
Abstract: A magnetoresistive effect device includes a magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer; a first port; a second port; a signal line; an impedance element; and a direct-current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The impedance element is connected to ground and to the signal line between the magnetoresistive effect element and the first port or the second port. The direct-current input terminal is connected to the signal line at the opposite side to the impedance element with the magnetoresistive effect element in between the direct-current input terminal and the impedance element. A closed circuit including the magnetoresistive effect element, the signal line, the impedance element, the ground, and the direct-current input terminal is to be formed.
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公开(公告)号：US09129622B2
公开(公告)日：2015-09-08
申请号：US13842948
申请日：2013-03-15
Applicant: TDK Corporation
Inventor： Takahiko Machita , Naomichi Degawa , Takekazu Yamane , Takumi Yanagisawa , Satoshi Miura , Kenta Hamamoto , Minoru Ota , Kenzo Makino , Shohei Kawasaki
CPC classification number: G11B5/3912 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3932 , G11B5/398 , H01L43/08
Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.
Abstract translation: 通过有效地抑制对介质等的错误写入来防止记录介质劣化的磁阻效应元件包括以夹着磁阻效应的方式层叠形成的磁阻效应部分，上屏蔽层和下屏蔽层 部分来自上方和下方，并且处于与层叠方向施加感测电流的垂直于平面（CPP）结构的电流。 磁阻效应部分包括非磁性中间层，并且从上下屏蔽层和下屏蔽层上下夹着非磁性中间层的第一铁磁层和第二铁磁层具有倾斜的磁化结构，其中它们的磁化为 分别相对于轨道宽度方向倾斜，上屏蔽层和下屏蔽层的磁化相互大致正交，第一铁磁层经由第一交换耦合功能间隙层与上屏蔽层间接地磁耦合， 位于所述第一铁磁层和所述上屏蔽层之间，并且所述第二铁磁层经由位于所述第二铁磁层和所述下屏蔽层之间的第二交换耦合功能间隙层与所述下屏蔽层间接地磁耦合。
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公开(公告)号：US12218266B2
公开(公告)日：2025-02-04
申请号：US17576467
申请日：2022-01-14
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Tomohito Mizuno
Abstract: A photodetection element includes a magnetic element including a first ferromagnetic layer to which light is applied, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first electrode in contact with a first surface of the magnetic element, the first surface being located on a first ferromagnetic layer side of the magnetic element in a lamination direction; a second electrode in contact with a second surface of the magnetic element, the second surface being opposite to the first surface; and a first high thermal conductivity layer disposed outside of the first ferromagnetic layer and having higher thermal conductivity than the first electrode.
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公开(公告)号：US12152934B2
公开(公告)日：2024-11-26
申请号：US18190336
申请日：2023-03-27
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane , Tetsuya Shibata , Tomohito Mizuno , Hideaki Fukuzawa
IPC: G01J1/42
Abstract: An optical device includes a magnetic element and a light application part, wherein the light application part configured to apply light to the magnetic element, the magnetic element includes a first ferromagnetic layer to which the light is applied, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and magnetization of the first ferromagnetic layer is inclined with respect to both an in-plane direction in which the first ferromagnetic layer extends and a surface-perpendicular direction perpendicular to a surface on which the first ferromagnetic layer extends in a state in which the light is not applied from the light application part to the magnetic element.
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公开(公告)号：US10680570B2
公开(公告)日：2020-06-09
申请号：US16123675
申请日：2018-09-06
Applicant: TDK CORPORATION
Inventor： Takekazu Yamane
Abstract: Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.
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