公开(公告)号：US20210343879A1

公开(公告)日：2021-11-04

申请号：US17282610

申请日：2019-10-09

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI ,  Kohei SASAKI

IPC: H01L29/872 ,  H01L29/47

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has an outer peripheral trench surrounding the anode electrode in a plan view. The surface of the drift layer positioned between the anode electrode and the outer peripheral trench is covered with a semiconductor layer having a conductivity type opposite to that of the drift layer.

公开(公告)号：US20210119062A1

公开(公告)日：2021-04-22

申请号：US17041127

申请日：2019-03-11

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI ,  Kohei SASAKI

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/24 ,  H01L29/41 ,  H01L29/47 ,  H01L29/66

Abstract: An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.

公开(公告)号：US20210020789A1

公开(公告)日：2021-01-21

申请号：US16977190

申请日：2019-02-25

Applicant: TAMURA CORPORATION ,  Novel Crystal Technology, Inc. ,  TDK Corporation

Inventor： Kohei SASAKI ,  Minoru FUJITA ,  Jun HIRABAYASHI ,  Jun ARIMA

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/66 ,  H01L21/311 ,  H01L29/423

Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 μm in a region including the inner surface of the trench.

公开(公告)号：US20210017668A1

公开(公告)日：2021-01-21

申请号：US16982280

申请日：2019-01-25

Applicant: TDK CORPORATION

Inventor： Katsumi KAWASAKI ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Daisuke INOKUCHI ,  Jun ARIMA ,  Makio KONDO

IPC: C30B15/34 ,  C30B29/16

Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

公开(公告)号：US20250015201A1

公开(公告)日：2025-01-09

申请号：US18891085

申请日：2024-09-20

Applicant: TDK CORPORATION

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872

Abstract: Disclosed herein is a junction barrier Schottky diode that includes a semiconductor substrate, a drift layer provided on the semiconductor substrate, an anode electrode contacting the drift layer, a cathode electrode contacting the semiconductor substrate, and a p-type semiconductor layer contacting both the anode electrode and the drift layer. The p-type semiconductor layer includes a first p-type semiconductor layer contacting the anode electrode and a second p-type semiconductor layer contacting the drift layer. The second p-type semiconductor layer is lower in valence band upper end level than the first p-type semiconductor layer.

公开(公告)号：US20240313129A1

公开(公告)日：2024-09-19

申请号：US18676077

申请日：2024-05-28

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24

CPC classification number: H01L29/8725 ,  H01L29/24

Abstract: Disclosed herein is a Schottky barrier diode that includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a center trench filled with the anode electrode. A bottom surface of the center trench is covered with an insulating film without being in contact with the anode electrode. At least a part of a side surface of the center trench is brought into Schottky contact with the anode electrode.

公开(公告)号：US20230039171A1

公开(公告)日：2023-02-09

申请号：US17784880

申请日：2020-10-05

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24 ,  H01L29/66

Abstract: A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and formed on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating film covering the inner wall of a trench formed in the drift layer, and a protective film covering the anode electrode, wherein a part of the protective film is embedded in the trench. The part of the protective film is thus embedded in the trench, so that adhesion performance between the anode electrode and protective film is enhanced. This makes it possible to prevent peeling at the boundary between the anode electrode and the protective film.

公开(公告)号：US20220307157A1

公开(公告)日：2022-09-29

申请号：US17702158

申请日：2022-03-23

Applicant: TDK CORPORATION

Inventor： Katsumi KAWASAKI ,  Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI

IPC: C30B15/30 ,  C30B29/16 ,  C30B15/16 ,  C30B15/20

Abstract: In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.

公开(公告)号：US20210343880A1

公开(公告)日：2021-11-04

申请号：US17282629

申请日：2019-10-09

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI ,  Kohei SASAKI

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/41 ,  H01L29/24

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.

公开(公告)号：US20200287060A1

公开(公告)日：2020-09-10

申请号：US16646074

申请日：2018-08-30

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Daisuke INOKUCHI

IPC: H01L29/872 ,  H01L29/24

Abstract: An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.