公开(公告)号：US09966922B2

公开(公告)日：2018-05-08

申请号：US15600066

申请日：2017-05-19

Applicant: TDK CORPORATION

Inventor： Tetsuya Shibata ,  Junichiro Urabe ,  Takekazu Yamane ,  Tsuyoshi Suzuki

IPC: H03H2/00 ,  H01L43/00 ,  G11B5/39

CPC classification number: H03H2/00 ,  G01R33/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/3945 ,  H01L43/00

Abstract: A magnetoresistive effect device includes a magnetoresistive effect element first and second ports, a signal line, an inductor, and a direct current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The inductor is connected to one of the signal line between the magnetoresistive effect element and the first port and the signal line between the magnetoresistive effect element and the second port and is capable of being connected to ground. The direct-current input terminal is connected to the other of the above signal lines. A closed circuit including the magnetoresistive effect element, the signal line, the inductor, the ground, and direct-current input terminal is capable of being formed. The magnetoresistive effect element is arranged so that direct current flows in a direction from a magnetization fixed layer to a magnetization free layer.

公开(公告)号：US11869989B2

公开(公告)日：2024-01-09

申请号：US17509730

申请日：2021-10-25

Applicant: TDK CORPORATION

Inventor： Tomohito Mizuno ,  Takekazu Yamane ,  Hideaki Fukuzawa ,  Tetsuya Shibata

IPC: H01L31/0224 ,  H01L27/146 ,  H04B10/114 ,  H04B10/69 ,  H04B10/50

CPC classification number: H01L31/022466 ,  H01L27/14643 ,  H04B10/1143 ,  H04B10/501 ,  H04B10/691

Abstract: An electrode structure includes: a metal film with an opening formed in a part of the metal film; and a transparent conductive film disposed in the opening, wherein the transparent conductive film is electronically connected to an element and overlaps with the element as viewed in a plan view in a thickness direction of the transparent conductive film.

公开(公告)号：US10957962B2

公开(公告)日：2021-03-23

申请号：US16340471

申请日：2017-10-23

Applicant: TDK CORPORATION

Inventor： Takekazu Yamane ,  Tetsuya Shibata ,  Tsuyoshi Suzuki ,  Junichiro Urabe ,  Atsushi Shimura

IPC: H01P1/218 ,  H03B15/00 ,  G11B5/39 ,  H01L43/08

Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.

公开(公告)号：US10608309B2

公开(公告)日：2020-03-31

申请号：US15962587

申请日：2018-04-25

Applicant: TDK CORPORATION

Inventor： Takekazu Yamane ,  Junichiro Urabe ,  Tsuyoshi Suzuki ,  Atsushi Shimura

IPC: H01P1/218 ,  H01P3/08 ,  H01P5/12 ,  H01F10/32

Abstract: A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.

公开(公告)号：US10381997B2

公开(公告)日：2019-08-13

申请号：US15870243

申请日：2018-01-12

Applicant: TDK CORPORATION

Inventor： Tetsuya Shibata ,  Junichiro Urabe ,  Atsushi Shimura ,  Takekazu Yamane

IPC: H01L43/08 ,  H03H1/00 ,  H01L43/00 ,  H03H2/00

Abstract: A high-frequency filter includes at least one magnetoresistive effect element; a first port through which a high-frequency signal is input; a second port through which a high-frequency signal is output; and a signal line.

公开(公告)号：US09948267B2

公开(公告)日：2018-04-17

申请号：US15439640

申请日：2017-02-22

Applicant: TDK CORPORATION

Inventor： Takekazu Yamane ,  Tetsuya Shibata ,  Junichiro Urabe ,  Atsushi Shimura

IPC: H03K3/45 ,  H03H7/06 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC classification number: H03H7/06 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03H2/00

Abstract: A magnetoresistive effect device includes at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer, a first port, a second port, a first signal line which is connected to the first port and through which high-frequency current corresponding to a high-frequency signal input into the first port flows, a second signal line, and a direct-current input terminal. The magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer. The magnetoresistive effect element is connected to the second port via the second signal line. The direct-current input terminal is connected to the magnetoresistive effect element.

公开(公告)号：US08913349B2

公开(公告)日：2014-12-16

申请号：US13853869

申请日：2013-03-29

Applicant: TDK Corporation

Inventor： Takekazu Yamane ,  Takahiko Machita ,  Naomichi Degawa ,  Minoru Ota ,  Kenta Hamamoto

IPC: G11B5/39 ,  H01L43/08

CPC classification number: G11B5/3932 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912

Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

Abstract translation: MR元件包括CP部分和CPP结构中的上下屏蔽层。 MR元件具有侧屏蔽层，以便在侧屏蔽层之间沿轨道宽度方向插入MR部分。 MR部分包括非磁性中间层和第一和第二铁磁层，以将非磁性中间层介于铁磁层之间。 上下屏蔽层中的每一个具有倾斜的磁化结构，使得其磁化相对于磁道宽度方向倾斜。 侧屏蔽层分别与上屏蔽层磁耦合。 第二铁磁层经由交换耦合功能间隙层与下屏蔽层间接地磁耦合。 侧屏蔽层向第一铁磁层施加偏置磁场; 并且第一和第二铁磁层的磁化基本上是正交的。

公开(公告)号：US08891208B2

公开(公告)日：2014-11-18

申请号：US13853927

申请日：2013-03-29

Applicant: TDK Corporation

Inventor： Naomichi Degawa ,  Takahiko Machita ,  Takekazu Yamane ,  Takumi Yanagisawa ,  Satoshi Miura ,  Kenta Hamamoto ,  Minoru Ota ,  Kenzo Makino ,  Shohei Kawasaki

IPC: G11B5/39 ,  H01L43/08

CPC classification number: G11B5/3932 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912

Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

Abstract translation: 抑制对具有MR部件的介质的错误写入的MR元件具有CPP结构。 MR部分包括非磁性中间层和第一和第二铁磁层，以便插入非磁性中间层。 第一和第二屏蔽层分别具有磁化相对于磁道宽度方向倾斜的倾斜磁化结构。 第一和第二铁磁层分别与第一和第二屏蔽层磁耦合。 用于调节至少第一铁磁层的磁化方向的磁化方向调整层位于与在MR部分中检测到的磁场接收的前端面相反的第一铁磁性层的后端面侧。