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公开(公告)号：US11005035B2
公开(公告)日：2021-05-11
申请号：US16364905
申请日：2019-03-26
Applicant: TDK CORPORATION
Inventor： Tsuyoshi Suzuki , Katsuyuki Nakada , Shinto Ichikawa
Abstract: A magnetoresistive effect element includes a first ferromagnetic layer and a tunnel barrier layer. The tunnel barrier layer has a main body region and a first interface region. The main body region has an oxide material of a first spinel structure represented by a general formula LM2O4. The first interface region has at least one element X selected from a group consisting of elements having a valence of 2 and elements having a valence of 3 excluding Al and has an oxide material of a second spinel structure represented by a general formula DG2O4(D represents one or more kinds of elements including Mg or the element X, and G represents one or more kinds of elements including Al or the element X). A content of the element X contained in the first interface region is larger than that of the element X contained in the main body region.
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公开(公告)号：US10885934B2
公开(公告)日：2021-01-05
申请号：US16364534
申请日：2019-03-26
Applicant: TDK CORPORATION
Inventor： Naomichi Degawa , Tsuyoshi Suzuki
IPC: G11B5/39 , G01R33/09 , H01L43/08 , H01L43/10 , H03H9/22 , H01F10/32 , H01L43/02 , G11B5/31 , B82Y25/00
Abstract: Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.
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Patent Agency Ranking
公开(公告)号：US10074688B2
公开(公告)日：2018-09-11
申请号：US15662697
申请日：2017-07-28
Applicant: TDK CORPORATION
Inventor： Tetsuya Shibata , Tsuyoshi Suzuki , Junichiro Urabe , Takekazu Yamane , Atsushi Shimura
CPC classification number: H01L27/22 , G11B5/3903 , G11B5/3945 , H01L43/02 , H01L43/08 , H03H1/0007 , H03H2/00 , H03H7/0153
Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.
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公开(公告)号：US09762182B2
公开(公告)日：2017-09-12
申请号：US15098617
申请日：2016-04-14
Applicant: TDK CORPORATION
Inventor： Tsuyoshi Suzuki , Eiji Suzuki
CPC classification number: H03B15/006 , H01F10/26 , H01F10/324 , H01F10/3286 , H03B5/1206 , H03B15/00
Abstract: A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density JO for oscillation, to a magnetoresistive effect element for a time TP, and then executes a second step of applying a current, which has a second current density JS smaller than the first current density and not smaller than the critical current density JO for oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time TP in the first step is JP, a critical current density for magnetization reversal of the magnetoresistive effect element is JR, and a magnetization reversal time of the magnetoresistive effect element is TR: 0.1 × T R ( J R - J O ) J p - J S
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公开(公告)号：US09225287B2
公开(公告)日：2015-12-29
申请号：US14256546
申请日：2014-04-18
Applicant: TDK CORPORATION
Inventor： Eiji Suzuki , Tsuyoshi Suzuki
CPC classification number: H03D1/00 , H03B15/006
Abstract: An oscillator has an oscillation portion that generates oscillatory electric signals due to a magnetization motion; and a first electric circuit that is connected in parallel to the oscillation portion. A current whose magnitude oscillates flows to the first electric circuit, and the first electric circuit is arranged such that a magnetic field generated by the current is applied to the oscillation portion.
Abstract translation: 振荡器具有由于磁化运动而产生振荡电信号的振荡部分; 以及与所述振荡部并联连接的第一电路。 大小振荡的电流流向第一电路，第一电路布置成使得由电流产生的磁场施加到振荡部分。
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公开(公告)号：US10818990B2
公开(公告)日：2020-10-27
申请号：US16262354
申请日：2019-01-30
Applicant: TDK CORPORATION
Inventor： Tsuyoshi Suzuki , Shinji Hara
Abstract: A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.
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公开(公告)号：US09966922B2
公开(公告)日：2018-05-08
申请号：US15600066
申请日：2017-05-19
Applicant: TDK CORPORATION
Inventor： Tetsuya Shibata , Junichiro Urabe , Takekazu Yamane , Tsuyoshi Suzuki
CPC classification number: H03H2/00 , G01R33/00 , G01R33/093 , G01R33/1284 , G11B5/3945 , H01L43/00
Abstract: A magnetoresistive effect device includes a magnetoresistive effect element first and second ports, a signal line, an inductor, and a direct current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The inductor is connected to one of the signal line between the magnetoresistive effect element and the first port and the signal line between the magnetoresistive effect element and the second port and is capable of being connected to ground. The direct-current input terminal is connected to the other of the above signal lines. A closed circuit including the magnetoresistive effect element, the signal line, the inductor, the ground, and direct-current input terminal is capable of being formed. The magnetoresistive effect element is arranged so that direct current flows in a direction from a magnetization fixed layer to a magnetization free layer.
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