公开(公告)号：US10475586B2

公开(公告)日：2019-11-12

申请号：US15938616

申请日：2018-03-28

Applicant: TDK CORPORATION

Inventor： Takeshi Shibahara ,  Yuki Nagamine ,  Yoshitomo Tanaka ,  Kumiko Yamazaki

IPC: H01G4/33 ,  H01L49/02 ,  H01G4/08 ,  C01B21/082 ,  H01G4/30

Abstract: The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property.A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein said “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.

公开(公告)号：US10468589B2

公开(公告)日：2019-11-05

申请号：US16142112

申请日：2018-09-26

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Tatsuo Shibata ,  Katsuyuki Nakada ,  Yoshitomo Tanaka

IPC: H01L45/00 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  G11B5/39

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US09076968B2

公开(公告)日：2015-07-07

申请号：US13827364

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro Aida ,  Yoshitomo Tanaka ,  Hitoshi Sakuma ,  Katsuyuki Kurachi ,  Kazuhiko Maejima

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16 ,  H01L41/08 ,  G01L9/00 ,  H01L41/09

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract translation: 作为压电元件，压电元件包括​​作为A（A）部位和B部位的Ta（钽）被替代的通式ABO3表示的钙钛矿型化合物钠铌酸钾的薄膜。 因此，提供压电元件以增加使用铌酸钾钠薄膜的压电元件的可靠性，并提高压电元件的压电特性。