公开(公告)号：US20250015201A1

公开(公告)日：2025-01-09

申请号：US18891085

申请日：2024-09-20

Applicant: TDK CORPORATION

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872

Abstract: Disclosed herein is a junction barrier Schottky diode that includes a semiconductor substrate, a drift layer provided on the semiconductor substrate, an anode electrode contacting the drift layer, a cathode electrode contacting the semiconductor substrate, and a p-type semiconductor layer contacting both the anode electrode and the drift layer. The p-type semiconductor layer includes a first p-type semiconductor layer contacting the anode electrode and a second p-type semiconductor layer contacting the drift layer. The second p-type semiconductor layer is lower in valence band upper end level than the first p-type semiconductor layer.

公开(公告)号：US20240313129A1

公开(公告)日：2024-09-19

申请号：US18676077

申请日：2024-05-28

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24

CPC classification number: H01L29/8725 ,  H01L29/24

Abstract: Disclosed herein is a Schottky barrier diode that includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a center trench filled with the anode electrode. A bottom surface of the center trench is covered with an insulating film without being in contact with the anode electrode. At least a part of a side surface of the center trench is brought into Schottky contact with the anode electrode.

公开(公告)号：US20230039171A1

公开(公告)日：2023-02-09

申请号：US17784880

申请日：2020-10-05

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24 ,  H01L29/66

Abstract: A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and formed on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating film covering the inner wall of a trench formed in the drift layer, and a protective film covering the anode electrode, wherein a part of the protective film is embedded in the trench. The part of the protective film is thus embedded in the trench, so that adhesion performance between the anode electrode and protective film is enhanced. This makes it possible to prevent peeling at the boundary between the anode electrode and the protective film.

公开(公告)号：US20220307157A1

公开(公告)日：2022-09-29

申请号：US17702158

申请日：2022-03-23

Applicant: TDK CORPORATION

Inventor： Katsumi KAWASAKI ,  Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI

IPC: C30B15/30 ,  C30B29/16 ,  C30B15/16 ,  C30B15/20

Abstract: In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.

公开(公告)号：US20210343880A1

公开(公告)日：2021-11-04

申请号：US17282629

申请日：2019-10-09

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI ,  Kohei SASAKI

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/41 ,  H01L29/24

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.

公开(公告)号：US20200287060A1

公开(公告)日：2020-09-10

申请号：US16646074

申请日：2018-08-30

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Daisuke INOKUCHI

IPC: H01L29/872 ,  H01L29/24

Abstract: An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.

公开(公告)号：US20240170335A1

公开(公告)日：2024-05-23

申请号：US18549255

申请日：2022-02-24

Applicant: TDK Corporation

Inventor： Minoru FUJITA ,  Jun ARIMA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L21/78

CPC classification number: H01L21/78

Abstract: To divide a β-type gallium oxide substrate having a (001) plane as a main surface satisfactorily. A method of diving a gallium oxide substrate includes: a step of forming a plurality of dividing grooves along the extending direction of the (100) plane of a β-type gallium oxide substrate having the (001) plane as the main surface; a step of processing the β-type gallium oxide substrate into strips by cutting the substrate in a direction perpendicular to the extending direction of the dividing grooves; and a step of cleaving the strip-shaped β-type gallium oxide substrates 10 along the dividing grooves for singulation. Since the plurality of dividing grooves are thus formed along the cleavage planes, the substrate can be divided satisfactorily without causing flaky peeling on the cleavage surfaces by cleaving the substrate along the dividing grooves.

公开(公告)号：US20240055536A1

公开(公告)日：2024-02-15

申请号：US18260520

申请日：2022-01-28

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24

CPC classification number: H01L29/8725 ,  H01L29/24

Abstract: To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A part of the anode electrode is embedded in an outer peripheral trench and a center trench through an insulating film. The insulating film is formed such that the thickness thereof in the depth direction of the outer peripheral trench becomes larger toward the outside, whereby an outer peripheral wall S1 of the anode electrode embedded in the outer peripheral trench is curved so as to approach vertical toward the outside. This results in relaxation of an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.

公开(公告)号：US20230352601A1

公开(公告)日：2023-11-02

申请号：US17784864

申请日：2020-10-05

Applicant: TDK Corporation

Inventor： Minoru FUJITA ,  Jun ARIMA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/40 ,  H01L29/24 ,  H01L29/06

CPC classification number: H01L29/8725 ,  H01L29/407 ,  H01L29/24 ,  H01L29/0623 ,  H01L29/66969

Abstract: A Schottky barrier diode includes an anode electrode which is brought into Schottky contact with a drift layer, a cathode electrode which is brought into ohmic contact with a semiconductor substrate, an insulating film covering the inner wall of a trench formed in the drift layer, a metal film covering the inner wall of the trench through the insulating film and electrically connected to the anode electrode, and a field insulating layer. The field insulating layer includes a first part positioned between an upper surface of the drift layer and the anode electrode and a second part covering the inner wall of the trench through the metal film and insulating film. With this configuration, even when misalignment occurs between the trench and the field insulating layer, dielectric breakdown can be prevented.

公开(公告)号：US20220056611A1

公开(公告)日：2022-02-24

申请号：US17299695

申请日：2019-12-03

Applicant: TDK CORPORATION

Inventor： Katsumi KAWASAKI ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Daisuke INOKUCHI ,  Jun ARIMA ,  Makio KONDO

IPC: C30B11/00 ,  C30B29/16

Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.