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公开(公告)号：US20150255698A1
公开(公告)日：2015-09-10
申请号：US14638690
申请日：2015-03-04
Applicant: TDK CORPORATION
Inventor： Kazuya MAEKAWA , Takashi ASATANI
IPC: H01L35/32
Abstract: A thermoelectric device includes a semiconductor stacked thermoelectric thin film including a first high-purity layer composed of SiGe as a main material and a composite carrier supply layer formed on the first high-purity layer. The composite carrier supply layer includes a second high-purity layer and third high-purity layer composed of Si as a main material, and a carrier supply layer held between the second and third high-purity layers and composed of SiGe as a main material. The carrier supply layer is a P-type carrier supply layer to which an additive of a group XIII element is added or a N-type carrier supply layer to which an additive of a group XV element is added.
Abstract translation: 热电装置包括：包含由SiGe作为主要材料的第一高纯度层和形成在第一高纯度层上的复合载体供给层的半导体层叠热电薄膜。 复合载体供给层包括第二高纯度层和由Si作为主要材料构成的第三高纯度层，以及保持在第二和第三高纯度层之间并由SiGe作为主要材料的载体供给层。 载体供给层是添加有第ⅩⅢ族元素的添加剂的P型载体供给层或添加有第XV族元素的添加剂的N型载体供给层。
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公开(公告)号：US20130240874A1
公开(公告)日：2013-09-19
申请号：US13790398
申请日：2013-03-08
Applicant: TDK CORPORATION
Inventor： Kazuya MAEKAWA , Kunihiro UEDA
IPC: H01L29/66
CPC classification number: H01L29/66136 , H01L21/02381 , H01L21/02483 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02631 , H01L29/12 , H01L29/861
Abstract: Semiconductors of different types are formed by a crystal growth technique and joined at the interface at which rapid atomic-layer-level compositional changes occur while maintaining high crystallinity of the semiconductor layers so as to form a heterogeneous PN junction. A layered film that includes a PN junction oxide thin film is formed on a single crystal substrate. The PN junction oxide thin film is constituted by an N-type semiconductor oxide thin film and a P-type semiconductor oxide thin film that are epitaxially grown to have c-axis orientation represented by (00k).
Abstract translation: 不同类型的半导体通过晶体生长技术形成，并且在保持高半导体层的高结晶度的同时发生快速原子层组成变化的界面处接合，从而形成异质PN结。 在单晶衬底上形成包含PN结氧化物薄膜的层状膜。 PN结氧化物薄膜由外延生长为具有由（00k）表示的c轴取向的N型半导体氧化物薄膜和P型半导体氧化物薄膜构成。
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公开(公告)号：US20240210249A1
公开(公告)日：2024-06-27
申请号：US18387883
申请日：2023-11-08
Applicant: TDK CORPORATION
Inventor： Shinji HARA , Naoki OHTA , Tadao SENRIUCHI , Susumu AOKI , Kazuya MAEKAWA , Maiko KOKUBO , Yusuke KIMOTO
CPC classification number: G01J5/22 , G01J5/0853
Abstract: The electromagnetic wave sensor includes: a first substrate; a first wire which extends in a first direction parallel to a substrate surface of the first substrate in a plan view from a direction perpendicular to the substrate surface; a second wire which extends in a direction parallel to the substrate surface and different from the first direction in the plan view; and an electromagnetic wave detector which is electrically connected to the first wire and is electrically connected to the second wire, wherein the first wire is located on the first substrate side in relation to the electromagnetic wave detector in a third direction orthogonal to the first direction and the second direction and the second wire is located on a side opposite to the first substrate in relation to the electromagnetic wave detector in the third direction.
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公开(公告)号：US20230296443A1
公开(公告)日：2023-09-21
申请号：US18180297
申请日：2023-03-08
Applicant: TDK Corporation
Inventor： Naoki OHTA , Shinji HARA , Susumu AOKI , Maiko KOKUBO , Kazuya MAEKAWA , Tadao SENRIUCHI
IPC: G01J5/20
CPC classification number: G01J5/20 , G01J2005/202
Abstract: Electromagnetic wave sensor (infrared sensor) 1 has: a first substrate; a second substrate that faces the first substrate and that allows infrared rays to pass through at least a part of the second substrate; first circumferential wall 4a that is positioned between the first substrate and the second substrate and that forms first space 8a together with the first and second substrates; bolometer structures 7 that are provided in first space 8a; first measuring element 9a that is provided in first space 8a and that is used for taking a first measurement relating to pressure P1 in first space 8a; and a monitoring portion. The monitoring portion acquires the first measurement that is taken using first measuring element 9a and outputs a predetermined signal indicating an abnormality based on at least the first measurement.
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公开(公告)号：US20200006614A1
公开(公告)日：2020-01-02
申请号：US16490405
申请日：2017-07-31
Applicant: TDK CORPORATION
Inventor： Makoto SHIBATA , Kazuya MAEKAWA , Takashi ASATANI
Abstract: A thermoelectric conversion device includes: a substrate that includes a first surface and a second surface facing each other in a thickness direction; thermoelectric conversion elements that are disposed on a side of the first surface of the substrate; and a plurality of heat transfer parts that are formed with spaces interposed therebetween in a first direction along an in-plane direction of the substrate, and that are configured to transfer heat from/to the thermoelectric conversion elements, wherein a low heat conduction part having a lower thermal conductivity than a thermal conductivity of the heat transfer parts is disposed between the heat transfer parts adjacent to each other in the first direction.
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Patent Agency Ranking
公开(公告)号：US20160240761A1
公开(公告)日：2016-08-18
申请号：US15018024
申请日：2016-02-08
Applicant: TDK CORPORATION
Inventor： Kazuya MAEKAWA , Takashi ASATANI
Abstract: A thermoelectric device includes a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer. The SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37. The stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer.
Abstract translation: 热电装置包括具有与SiGe层接触的SiGe层和Si层的半导体层叠薄膜。 SiGe在85:15至63:37的范围内具有以原子序数比计的Si：Ge组成比。 叠层薄膜具有多个层叠结构，每个层叠结构具有SiGe层和Si层。
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17.发明公开公开(公告)号：US20240035893A1
公开(公告)日：2024-02-01
申请号：US18344358
申请日：2023-06-29
Applicant: TDK CORPORATION
Inventor： Tadao SENRIUCHI , Naoki OHTA , Kazuya MAEKAWA , Susumu AOKI , Maiko KOKUBO , Yusuke KIMOTO , Shinji HARA
CPC classification number: G01J5/14 , G01J5/22 , G01L1/22 , G01N22/00 , H03F3/45071
Abstract: An element array circuit includes one or more first wiring lines, second wiring lines, impedance elements, one or more operational amplifiers, one or more conversion elements, and one or more switchers. The second wiring lines each extend in a direction different from a direction of extension of the first wiring lines. The impedance elements are each coupled to one each of the first and second wiring lines. The operational amplifiers each include a positive input terminal, a negative input terminal couplable to one of the second wiring lines, and an output terminal. The conversion elements are each coupled to the negative input terminal and the output terminal, and each convert a current flowing through the second wiring line coupled to the negative input terminal into a voltage. The switchers are each coupled to one of the conversion elements and come into a conducting state or a nonconducting state.
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公开(公告)号：US20230064502A1
公开(公告)日：2023-03-02
申请号：US17890589
申请日：2022-08-18
Applicant: TDK CORPORATION
Inventor： Susumu AOKI , Shinji HARA , Naoki OHTA , Kazuya MAEKAWA , Maiko SHIROKAWA
IPC: G01J5/20
Abstract: The present invention includes an electromagnetic wave detector, and a pair of arm portions and that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. Each of the arm portions includes a conductor layer which is in a line shape and electrically connected to the temperature detection element, and dielectric layers which are disposed on both sides of the conductor layer. In a short direction of the dielectric layers in a plan view, the conductor layer has a shape protruding outward beyond both end portions of the dielectric layers in the short direction.
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公开(公告)号：US20230055177A1
公开(公告)日：2023-02-23
申请号：US17889149
申请日：2022-08-16
Applicant: TDK CORPORATION
Inventor： Shinji HARA , Naoki OHTA , Kazuya MAEKAWA , Susumu AOKI , Maiko SHIROKAWA
Abstract: An electromagnetic wave sensor has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each of the electromagnetic wave absorbers at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each of the electromagnetic wave absorbers approaches the second extending portions with the connection portions as fulcrums.
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公开(公告)号：US20200028055A1
公开(公告)日：2020-01-23
申请号：US16490428
申请日：2017-07-31
Applicant: TDK CORPORATION
Inventor： Makoto SHIBATA , Kazuya MAEKAWA
Abstract: A thermoelectric conversion device includes: thermoelectric conversion elements that are disposed on a virtual plane; a plurality of first heat transfer members that are disposed on one side with respect to the thermoelectric conversion elements in a vertical direction perpendicular to the virtual plane and that are configured to transfer heat to/from the thermoelectric conversion elements; and a plurality of heat transfer parts that are disposed on another side with respect to the thermoelectric conversion elements in the vertical direction perpendicular to the virtual plane with a space interposed therebetween in a first direction along an in-plane direction of the virtual plane, and that are configured to transfer heat to/from the thermoelectric conversion elements.
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