Abstract:
A magnetoresistance effect device includes: at least one magnetoresistance effect element; at least one first signal line; and an output port, wherein the magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first signal line is separated from the magnetoresistance effect element with an insulator interposed therebetween and a high frequency magnetic field caused by a first high frequency current flowing through the first signal line is applied to the first ferromagnetic layer, wherein a high frequency current flows through the magnetoresistance effect element, and wherein a signal including a DC signal component caused by an output of the magnetoresistance effect element is output from the output port.
Abstract:
Disclosed herein is an antenna device that includes a substrate, an IC chip mounted on the substrate, a first antenna element including a plurality of patch antenna conductors that is supplied with power from the IC chip and that radiates a beam in a direction substantially perpendicular to the substrate, and a second antenna element that is supplied with power from the IC chip and that radiates a beam in a first horizontal direction substantially parallel to the substrate.
Abstract:
A higher oscillation output is realized in a magnetic element utilizing high frequency characteristics of a magnetoresistive effect element. A magnetic element 1 includes a magnetoresistive effect film 10 including a magnetic pinned layer 14 and a magnetic free layer 12 with a non-magnetic spacer layer 13 interposed therebetween, and a pair of electrodes (lower electrode layer 11 and upper electrode layer 15) arranged with the magnetoresistive effect film 10 interposed therebetween in a stacking direction of the magnetoresistive effect film 10, wherein, given that a minimum value of an area of the magnetic free layer 12 in a section perpendicular to the stacking direction is denoted by Sf, and that a minimum value of an area of the magnetic pinned layer 14 in a section perpendicular to the stacking direction is denoted by Spm, relation of Sf>Spm is satisfied.
Abstract:
The light detection element includes a magnetic element and an optical waveguide. The magnetic element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The optical waveguide includes at least a core and a cladding covering at least a part of the core. Light that has propagated through the optical waveguide is applied to the magnetic element.
Abstract:
A light detection element include: a magnetic element, a capacitor, and a resistor, wherein the magnetic element and the capacitor are connected in series, the resistor is connected to the magnetic element and the capacitor in parallel, the magnetic element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and the magnetic element is configured to be irradiated with a light containing an optical signal with a change of intensity of the light.
Abstract:
A transceiver device includes: a receiving device including a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the receiving device is configured to receive an optical signal; a transmission device including a modulated light output element, wherein the transmission device is configured to transmit an optical signal; and a circuit chip including an integrated circuit electrically connected to the magnetic element and the modulated light output element.
Abstract:
An optical device includes a magnetic element and a light application part, wherein the light application part configured to apply light to the magnetic element, the magnetic element includes a first ferromagnetic layer to which the light is applied, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and magnetization of the first ferromagnetic layer is inclined with respect to both an in-plane direction in which the first ferromagnetic layer extends and a surface-perpendicular direction perpendicular to a surface on which the first ferromagnetic layer extends in a state in which the light is not applied from the light application part to the magnetic element.
Abstract:
Disclosed herein is a patch antenna that includes a first dielectric layer in which a patch conductor is provided, a second dielectric layer in which a signal line extending in a direction parallel to the patch conductor is provided, a feed conductor provided perpendicularly to the patch conductor so as to connect one end of the signal line and a feed point for the patch conductor, a first ground pattern provided between the patch conductor and the signal line, and a second ground pattern provided on an opposite side to the first ground pattern with respect to the signal line. The first dielectric layer has a dielectric constant lower than that of the second dielectric layer.
Abstract:
A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.
Abstract:
A magnetic field sensor includes: a first magnetoresistance effect element; a second magnetoresistance effect element; an output port; a signal line; and a first input terminal configured to be capable of applying a DC current or a DC voltage to the first magnetoresistance effect element. Each of the first magnetoresistance effect element and the second magnetoresistance effect element includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed therebetween, the first magnetoresistance effect element and the second magnetoresistance effect element are connected through the signal line, and the output port is connected in parallel with the second magnetoresistance effect element.