ADAPTIVE THERMAL OVERSHOOT AND CURRENT LIMITING PROTECTION FOR MOSFETS

    公开(公告)号:US20200161293A1

    公开(公告)日:2020-05-21

    申请号:US16751491

    申请日:2020-01-24

    Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

    Methods and apparatus to increase efficiency for wireless power transfer

    公开(公告)号:US10153661B2

    公开(公告)日:2018-12-11

    申请号:US15362563

    申请日:2016-11-28

    Abstract: Methods, apparatus, systems and articles of manufacture to efficiently transfer power wirelessly are disclosed. An example apparatus includes a feedback loop to when a second current value is greater than a first current value, change a direction value, the second current value being obtained after the first current value; when the second current value is less than the first current value, maintain the direction value; and a summer to when the direction value corresponds to a first direction value, increase a reference signal by a step size; and when the direction value corresponds to a second direction value different than the first direction value, decrease the reference signal by the step size.

    Adaptive thermal overshoot and current limiting protection for MOSFETs

    公开(公告)号:US10586791B2

    公开(公告)日:2020-03-10

    申请号:US16035007

    申请日:2018-07-13

    Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

    ADAPTIVE THERMAL OVERSHOOT AND CURRENT LIMITING PROTECTION FOR MOSFETS

    公开(公告)号:US20190279977A1

    公开(公告)日:2019-09-12

    申请号:US16035007

    申请日:2018-07-13

    Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

    Masking vd to vref after miller plateau and gate charge

    公开(公告)号:US10038436B2

    公开(公告)日:2018-07-31

    申请号:US15347380

    申请日:2016-11-09

    Abstract: A gate driver IC for driving an NMOS transistor having a drain coupled through a load to a power supply. A gate driver output drives the gate of the NMOS transistor. A comparator receives the drain voltage of the NMOS transistor and compares it to a reference voltage representative of a short circuit condition between the drain and the power supply. The comparator outputs a first value if the drain voltage is greater than the reference voltage and outputs a second value if the drain voltage is less than or equal to the reference voltage. Control circuitry receives the output of the first comparator and pulls the voltage of the gate driver output low if the comparator output is of the first value. Adaptive masking circuitry is operable, upon an application of an “on” signal to the gate driver output, to mask the output of the comparator such that a condition of the drain voltage being greater than the reference voltage does not cause the control circuitry to pull the voltage of the gate driver output low. The adaptive masking circuitry detects a Miller plateau in the gate voltage of the external NMOS transistor. The adaptive masking circuitry stops masking the output of the comparator after the end of the Miller plateau.

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