公开(公告)号：US20160071838A1

公开(公告)日：2016-03-10

申请号：US14864504

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/66

CPC classification number: H01L27/0676 ,  H01L27/0629 ,  H01L27/0802 ,  H01L28/24 ,  H01L29/66143 ,  H01L29/8725

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

公开(公告)号：US11355211B2

公开(公告)日：2022-06-07

申请号：US16810560

申请日：2020-03-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Keith Edmund Kunz ,  Joseph Alan Sankman

IPC: G05F1/46 ,  G11C27/02 ,  G05F3/26 ,  G01R19/165 ,  H03K5/24 ,  H03K19/21 ,  G05F1/575 ,  G05F1/613

Abstract: A system includes an input voltage source, a linear regulator coupled to the input voltage source, and a load coupled to an output of the linear regulator. The linear regulator includes an error amplifier coupled to a control terminal of a switch; and a control circuit coupled to the error amplifier and configured to provide a reference voltage to the error amplifier. The control circuit includes a mode selection circuit with a slow loop configured to sample a load current and with a fast loop configured to detect an output voltage error signal. The mode selection circuit is configured to adjust a mode of the control circuit between a continuous power mode and a duty cycle power save mode based on the sampled load current and the output voltage error signal.

公开(公告)号：US10803968B2

公开(公告)日：2020-10-13

申请号：US16809474

申请日：2020-03-04

Applicant: Texas Instruments Incorporated

Inventor： Keith Edmund Kunz ,  BoQiang Xiao

IPC: G11C27/02 ,  G05F3/26 ,  G01R19/165 ,  G05F1/46 ,  H03K5/24 ,  H03K19/21 ,  G05F1/575

Abstract: Methods, apparatus, systems and articles of manufacture are disclosed to control switching of a sampling circuit. An example apparatus includes an offset window detector to determine whether a first voltage meets a first threshold of a target input voltage; a settling time detector coupled to the offset window detector, the settling time detector to determine whether a second voltage meets a second threshold, the second voltage dependent on a delay of the settling time detector, the delay of the settling time detector to track a time response of a scaling amplifier; and a sample acquisition controller coupled to the offset window detector and the settling time detector, the sample acquisition controller operable to cause a reference voltage to be sampled, in response to the first threshold and the second threshold being met.

公开(公告)号：US20200286574A1

公开(公告)日：2020-09-10

申请号：US16809474

申请日：2020-03-04

Applicant: Texas Instruments Incorporated

Inventor： Keith Edmund Kunz ,  BoQiang Xiao

IPC: G11C27/02 ,  G05F3/26 ,  G01R19/165 ,  G05F1/575 ,  H03K5/24 ,  H03K19/21 ,  G05F1/46

Abstract: Methods, apparatus, systems and articles of manufacture are disclosed to control switching of a sampling circuit. An example apparatus includes an offset window detector to determine whether a first voltage meets a first threshold of a target input voltage; a settling time detector coupled to the offset window detector, the settling time detector to determine whether a second voltage meets a second threshold, the second voltage dependent on a delay of the settling time detector, the delay of the settling time detector to track a time response of a scaling amplifier; and a sample acquisition controller coupled to the offset window detector and the settling time detector, the sample acquisition controller operable to cause a reference voltage to be sampled, in response to the first threshold and the second threshold being met.

公开(公告)号：US20180013349A1

公开(公告)日：2018-01-11

申请号：US15709497

申请日：2017-09-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ranjit Kumar Dash ,  Keith Edmund Kunz

IPC: H02M3/158 ,  G01R19/175 ,  G01R19/00 ,  H02M3/156 ,  H02M1/00

CPC classification number: H02M3/158 ,  G01R19/00 ,  G01R19/175 ,  G05F1/44 ,  H02M3/156 ,  H02M2001/0009 ,  Y02B70/1425

Abstract: Methods and apparatus for detecting a zero inductor current to control switch transitions for a power converter. An example method includes outputting a first voltage and a first current, receiving the first voltage and output a second voltage into an input of a comparator, when the second voltage is above a third voltage, outputting a first output voltage, when the second voltage is below the third voltage, outputting a second output voltage, determining when the first current is zero based the output of the comparator, enabling a set of switches based on when the first current is zero.

公开(公告)号：US09806614B2

公开(公告)日：2017-10-31

申请号：US14973146

申请日：2015-12-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ranjit Kumar Dash ,  Keith Edmund Kunz

IPC: G05F1/44 ,  H02M3/158 ,  G01R19/00 ,  G05F3/16 ,  H02M3/156 ,  H02M1/00

CPC classification number: H02M3/158 ,  G01R19/00 ,  G01R19/175 ,  H02M3/156 ,  H02M2001/0009

Abstract: Methods and apparatus for detecting a zero inductor current to control switch transitions for a power converter. An example method includes outputting a first voltage and a first current, receiving the first voltage and output a second voltage into an input of a comparator, when the second voltage is above a third voltage, outputting a first output voltage, when the second voltage is below the third voltage, outputting a second output voltage, determining when the first current is zero based the output of the comparator, enabling a set of switches based on when the first current is zero.

公开(公告)号：US20170179823A1

公开(公告)日：2017-06-22

申请号：US14973146

申请日：2015-12-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ranjit Kumar Dash ,  Keith Edmund Kunz

IPC: H02M3/158

CPC classification number: H02M3/158 ,  G01R19/00 ,  G01R19/175 ,  H02M3/156 ,  H02M2001/0009

Abstract: Methods and apparatus for detecting a zero inductor current to control switch transitions for a power converter. An example method includes outputting a first voltage and a first current, receiving the first voltage and output a second voltage into an input of a comparator, when the second voltage is above a third voltage, outputting a first output voltage, when the second voltage is below the third voltage, outputting a second output voltage, determining when the first current is zero based the output of the comparator, enabling a set of switches based on when the first current is zero.

公开(公告)号：US20160071839A1

公开(公告)日：2016-03-10

申请号：US14864538

申请日：2015-09-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Russell Carlton McMullan ,  Binu Kamblath Pushkarakshan ,  Subramanian J. Narayan ,  Swaminathan Sankaran ,  Keith Edmund Kunz

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/872

CPC classification number: H01L27/0676 ,  H01L27/0629 ,  H01L27/0802 ,  H01L28/24 ,  H01L29/66143 ,  H01L29/8725

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.