公开(公告)号：US20170179033A1

公开(公告)日：2017-06-22

申请号：US14974012

申请日：2015-12-18

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Kezhakkedath R. Udayakumar ,  Eric H. Warninghoff ,  Alan G. Merriam ,  Rick A. Faust

IPC: H01L23/532 ,  H01L21/311 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53238 ,  H01L21/31111 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76892 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223

Abstract: An integrated circuit and method comprising an underlying metal geometry, a dielectric layer on the underlying metal geometry, a contact opening through the dielectric layer, an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening, and an oxidation resistant barrier layer disposed between the underlying metal geometry and overlying metal geometry. The oxidation resistant barrier layer is formed of TaN or TiN with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.

公开(公告)号：US20130307375A1

公开(公告)日：2013-11-21

申请号：US13946144

申请日：2013-07-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kezhakkedath R. Udayakumar ,  Marie Denison ,  Theodore S. Moise

IPC: H01L41/08

CPC classification number: H01L41/08 ,  H01L27/20 ,  H01L41/0533 ,  H01L41/1134 ,  H01L41/1136 ,  H01L41/1138 ,  H01L41/22 ,  H01L41/318 ,  H01L2224/18

Abstract: A planar integrated MEMS device has a piezoelectric element on a dielectric isolation layer over a flexible element attached to a proof mass. The piezoelectric element contains a ferroelectric element with a perovskite structure formed over an isolation dielectric. At least two electrodes are formed on the ferroelectric element. An upper hydrogen barrier is formed over the piezoelectric element. Front side singulation trenches are formed at a periphery of the MEMS device extending into the semiconductor substrate. A DRIE process removes material from the bottom side of the substrate to form the flexible element, removes material from the substrate under the front side singulation trenches, and forms the proof mass from substrate material. The piezoelectric element overlaps the flexible element.