公开(公告)号：US20070052001A1

公开(公告)日：2007-03-08

申请号：US11502426

申请日：2006-08-11

Applicant: Seung-eon Ahn ,  Jung-bin Yun ,  In-kyeong Yoo ,  Dong-chul Kim ,  Tae-hoon Kim

Inventor： Seung-eon Ahn ,  Jung-bin Yun ,  In-kyeong Yoo ,  Dong-chul Kim ,  Tae-hoon Kim

IPC: H01L29/76

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

Abstract: A nonvolatile semiconductor memory device and a method of fabricating the same are provided. The nonvolatile memory device may include a switching device and a storage node connected to the switching device. The storage node may comprise a lower electrode, a data storing layer, and an upper electrode. The data storing layer may include a first region where a current path is formed at a first voltage, and a second region surrounding the first region where a current path is formed at a second voltage, greater than the first voltage. The first region may be positioned to contact the upper electrode and the lower electrode.

Abstract translation: 提供一种非易失性半导体存储器件及其制造方法。 非易失性存储器件可以包括连接到开关器件的开关器件和存储节点。 存储节点可以包括下电极，数据存储层和上电极。 数据存储层可以包括在第一电压处形成电流路径的第一区域和围绕第一区域的第二区域，其中电流路径形成在大于第一电压的第二电压处。 第一区域可以被定位成接触上电极和下电极。

公开(公告)号：US20060241277A1

公开(公告)日：2006-10-26

申请号：US11324953

申请日：2006-01-04

Applicant: Moon-kyoon Chun ,  Tae-hoon Kim ,  Chan-hong Lee ,  Jae-il Roh

Inventor： Moon-kyoon Chun ,  Tae-hoon Kim ,  Chan-hong Lee ,  Jae-il Roh

IPC: C08G73/00

CPC classification number: C08F8/32 ,  C08F212/00

Abstract: The present invention relates to a method for preparing an imide substituted copolymer resin comprising the steps of: copolymerization by feeding a mixture of an aromatic vinyl monomer and a vinyl cyanide monomer, a mixture of an unsaturated dicarboxylic anhydride monomer and a solvent, an initiator and a chain transfer agent at once to a copolymerization reactor; and imide substitution by continuously feeding the resultant polymerization solution to an imide substitution reactor while continuously feeding a primary amine. The preparation method according to the present invention is capable of continuously preparing an imide substituted copolymer resin having superior heat resistance and excellent fluidity and improving mechanical property and compatibility with ABS resin by inhibiting formation of aromatic vinyl homopolymer.

Abstract translation: 本发明涉及一种制备酰亚胺取代共聚树脂的方法，包括以下步骤：通过将芳族乙烯基单体和乙烯基氰单体的混合物，不饱和二羧酸酐单体和溶剂的混合物，引发剂和 一个链转移剂一次到共聚反应器; 并通过将所得聚合溶液连续供给到酰亚胺取代反应器中而连续进料伯胺进行酰亚胺取代。 根据本发明的制备方法能够通过抑制芳族乙烯基均聚物的形成，连续地制备具有优异的耐热性和优异的流动性并提高机械性能和与ABS树脂的相容性的酰亚胺取代的共聚物树脂。

公开(公告)号：US06930356B2

公开(公告)日：2005-08-16

申请号：US10464059

申请日：2003-06-17

Applicant: Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

Inventor： Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L31/119

CPC classification number: H01L29/7802 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7395

Abstract: In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.

Abstract translation: 根据本发明的一个实施例，功率半导体器件包括在半导体衬底上延伸的第一导电类型的第一漂移区。 第一漂移区域具有比半导体衬底更低的杂质浓度。 第一导电类型的第二漂移区域在第一漂移区域上延伸，并且具有比第一漂移区域更高的杂质浓度。 第二导电类型的多个条形体区域形成在第二漂移区域的上部。 第一导电类型的第三区域形成在每个体区的上部，以便在第三区域和第二漂移区域之间的每个体区域中形成沟道区域。 栅电极横向延伸，但与以下绝缘：（i）每个体区中的沟道区，（ii）相邻的体区之间的第二漂移区的表面积，和（iii）每个源的表面部分 地区。

公开(公告)号：US06664595B1

公开(公告)日：2003-12-16

申请号：US09533816

申请日：2000-03-24

Applicant: Chong-man Yun ,  Tae-hoon Kim

Inventor： Chong-man Yun ,  Tae-hoon Kim

IPC: H01L2976

CPC classification number: H01L29/7802 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/66712

Abstract: A power MOSFET is provided. In this power MOSFET, a drift region is formed on a drain region having the same conductivity type as that of the drain region using a semiconductor substrate of a first conductivity type. A gate electrode is formed on the drift region, having a plurality of openings spaced apart from each other by a predetermined distance. The plurality of openings partially expose the drift region, and a gate insulating layer is interposed between the gate electrode and the drift region. A body region of a second conductivity type opposite to the first conductivity type is formed on a predetermined upper region of the drift region and extends from the opening to have a side overlapped by the gate electrode. A channel in the portion of the body region overlapped by the gate electrode is not formed and is adjacent to at least two facing sides of the opening. A source region is formed in the body region, including a first source region shaped in the form of a strip, the first source region contacting a portion where a channel is formed, and a second source region connecting the first source regions facing to each other. Also, a source electrode is electrically connected to the source region, and a drain electrode is electrically connected to the drain region.

Abstract translation: 提供功率MOSFET。 在该功率MOSFET中，使用第一导电类型的半导体衬底，在具有与漏区相同的导电类型的漏区上形成漂移区。 栅电极形成在漂移区上，具有彼此隔开预定距离的多个开口。 多个开口部分地暴露漂移区域，并且栅极绝缘层插入在栅极电极和漂移区域之间。 在漂移区域的预定的上部区域上形成与第一导电类型相反的第二导电类型的体区，并且从开口延伸以与栅电极重叠。 与栅电极重叠的体区的部分中的通道不形成并且与开口的至少两个相对的侧相邻。 源区域形成在主体区域中，包括形成为带状的第一源极区域，与形成沟道的部分接触的第一源极区域和连接彼此面对的第一源极区域的第二源极区域 。 另外，源电极与源区电连接，漏电极与漏极区电连接。

公开(公告)号：US5461591A

公开(公告)日：1995-10-24

申请号：US161761

申请日：1993-12-02

Applicant: Tae-hoon Kim ,  Young-Hyun Jun

Inventor： Tae-hoon Kim ,  Young-Hyun Jun

IPC: G11C5/14 ,  G11C7/00 ,  H03K3/01

CPC classification number: G11C5/147 ,  G11C5/146 ,  H01L2924/0002

Abstract: A voltage generator for use in a semiconductor memory device suitable for use as a backbias voltage generator, as an internal high voltage generator, or as an internal power voltage generator. The present invention includes: a rectifier for producing a dc voltage power by rectifying clock signals; an oscillator including an odd number of invertors connected in series, and with the output of the last invertor fed back to the first invertor so as to oscillate clock pulses; and one or more bypass circuit connected so as for the output of the first invertor to bypass one or more intermediate invertors, and connected and disconnected by a control switch.

Abstract translation: 一种用于半导体存储器件的电压发生器，适用于作为反向电压发生器，作为内部高压发生器或内部电力电压发生器。 本发明包括：整流器，用于通过整流时钟信号产生直流电压电力; 包括串联连接的奇数个反相器的振荡器，并且将最后一个反相器的输出反馈到第一反相器以振荡时钟脉冲; 并且连接一个或多个旁路电路，以便使第一反相器的输出绕过一个或多个中间反相器，并由控制开关连接和断开。

公开(公告)号：US08754879B2

公开(公告)日：2014-06-17

申请号：US13237370

申请日：2011-09-20

Applicant: Jung-seob Lee ,  Sang-hoon Lee ,  Tae-hoon Kim ,  Agarwal Pankaj

Inventor： Jung-seob Lee ,  Sang-hoon Lee ,  Tae-hoon Kim ,  Agarwal Pankaj

IPC: G09G5/00 ,  G06F3/038 ,  G05F1/00 ,  H05B37/02 ,  H05B39/04 ,  H05B41/36

CPC classification number: G09G3/342 ,  G09G3/2092 ,  G09G2330/02 ,  G09G2330/023 ,  H02M3/33507 ,  H05B33/0815 ,  H05B33/0827

Abstract: A display apparatus and a power circuit device thereof are provided. The power circuit device includes: a transforming unit which outputs a first output current and a second output current in response to change of an input current; a first switching unit which switches to allow the input current to be selectively input; a first switch control unit which controls the first switching unit so that an operation voltage of the display apparatus reaches a first target value; a second switching unit which switches to allow the second output current to be selectively output; a backlight driving unit which drives the backlight based on the second output current; and a second switch control unit which controls the second switching unit so that a driving voltage of the backlight reaches a second target value.

Abstract translation: 提供了一种显示装置及其电源电路装置。 电源电路装置包括：变换单元，其响应于输入电流的变化输出第一输出电流和第二输出电流; 第一切换单元，其切换以允许输入电流被选择性地输入; 第一开关控制单元，其控制所述第一开关单元，使得所述显示装置的操作电压达到第一目标值; 第二切换单元，其切换以允许选择性地输出第二输出电流; 基于第二输出电流驱动背光的背光驱动单元; 以及第二开关控制单元，其控制所述第二开关单元，使得所述背光源的驱动电压达到第二目标值。

公开(公告)号：US08279569B2

公开(公告)日：2012-10-02

申请号：US12724548

申请日：2010-03-16

Applicant: Pankaj Agarwal ,  Sung-jin Choi ,  Tae-hoon Kim

Inventor： Pankaj Agarwal ,  Sung-jin Choi ,  Tae-hoon Kim

IPC: H02H3/00

CPC classification number: H02H1/0038 ,  H02H3/207 ,  H05B33/089 ,  Y02B20/341

Abstract: An apparatus for preventing abnormal voltage, a light emitting module, and a display apparatus are provided. The present apparatus for preventing abnormal voltage extracts the highest voltage and the lowest voltage among voltage applied from a plurality of loads, includes two voltage distribution units distributing the highest voltage and the lowest voltage, and detects whether the highest voltage and the lowest voltage applied from the voltage distribution unit are within a predetermined range. Accordingly, the apparatus for preventing abnormal voltage is not affected greatly in terms of its size and cost even if the number of loads to be protected increases.

Abstract translation: 提供一种防止异常电压的装置，发光模块和显示装置。 用于防止异常电压的本装置提取从多个负载施加的电压中的最高电压和最低电压，包括分配最高电压和最低电压的两个电压分配单元，并且检测是否施加最高电压和最低电压 电压分配单元在预定范围内。 因此，即使要保护的负载数量增加，用于防止异常电压的装置在其尺寸和成本方面也不会受到很大的影响。

公开(公告)号：US08278058B2

公开(公告)日：2012-10-02

申请号：US12672498

申请日：2008-08-06

Applicant: Dong Su Kim ,  Nam Hoon Cho ,  Hyung Jin Na ,  Young Deuk Choi ,  Jae Ho Jang ,  Hye-Kyung Kim ,  Mo Yoel Park ,  Won Man Park ,  Tae-hoon Kim ,  Dong Hee Lee ,  Kyung Mok Park

Inventor： Dong Su Kim ,  Nam Hoon Cho ,  Hyung Jin Na ,  Young Deuk Choi ,  Jae Ho Jang ,  Hye-Kyung Kim ,  Mo Yoel Park ,  Won Man Park ,  Tae-hoon Kim ,  Dong Hee Lee ,  Kyung Mok Park

IPC: G01N33/53

CPC classification number: G01N33/57438 ,  C07K16/3038 ,  C07K16/40 ,  G01N33/5011 ,  G01N33/5017 ,  G01N33/573 ,  G01N2333/91017

Abstract: Disclosed herein are a composition and a kit for diagnosing renal cell carcinoma. The composition and kit employ, as a renal cell carcinoma marker, nicotinamide N-methyltransferase, L-plastin, secretagogin, NM23A, CapG, which is an actin regulatory protein, and/or C4a anaphylatoxin.

Abstract translation: 本文公开了用于诊断肾细胞癌的组合物和试剂盒。 作为肾细胞癌标记物的组合物和试剂盒使用烟酰胺N-甲基转移酶，L-丝胶蛋白，促分泌素，NM23A，CapG，其是肌动蛋白调节蛋白和/或C4a过敏毒素。

公开(公告)号：US08032069B2

公开(公告)日：2011-10-04

申请号：US12975785

申请日：2010-12-22

Applicant: Su-ho Shin ,  Dong-woo Lee ,  Tae-gyu Kim ,  Chang-hoon Jung ,  Tae-hoon Kim ,  Hwan-hee Kim

Inventor： Su-ho Shin ,  Dong-woo Lee ,  Tae-gyu Kim ,  Chang-hoon Jung ,  Tae-hoon Kim ,  Hwan-hee Kim

IPC: G03G15/20

CPC classification number: G03G15/2064 ,  G03G2215/2035

Abstract: A fusing device includes a rotatable pressing roller, a fusing belt to rotate by a rotational force transmitted from the rotatable pressing roller, a nip forming member to contact an inner surface of the fusing belt to form a nip on a contact area between the rotatable pressing roller and the fusing belt, a heating member formed in approximately an internal central portion of the fusing belt to heat the nip forming member and the fusing belt, an inner support member formed within the fusing belt to press a nip part of the nip forming member toward the rotatable pressing roller, and an outer support member formed outside the fusing belt, and both ends of the outer support member being engaged with the inner support member to thereby reinforce the strength of the inner support member and form a path for radiation heat to disperse. The support unit includes an inner support member placed within the belt unit, and an outer support member placed outside the belt unit, both ends of the outer support member being engaged with the inner support member to reinforce the strength of the inner support member and to form a path for a radiation heat to disperse.

公开(公告)号：US20110091254A1

公开(公告)日：2011-04-21

申请号：US12975785

申请日：2010-12-22

Applicant: Su-ho Shin ,  Dong-woo Lee ,  Tae-gyu Kim ,  Chang-hoon Jung ,  Tae-hoon Kim ,  Hwan-hee Kim

Inventor： Su-ho Shin ,  Dong-woo Lee ,  Tae-gyu Kim ,  Chang-hoon Jung ,  Tae-hoon Kim ,  Hwan-hee Kim

IPC: G03G15/20

CPC classification number: G03G15/2064 ,  G03G2215/2035

Abstract: A fusing device includes a rotatable pressing roller, a fusing belt to rotate by a rotational force transmitted from the rotatable pressing roller, a nip forming member to contact an inner surface of the fusing belt to form a nip on a contact area between the rotatable pressing roller and the fusing belt, a heating member formed in approximately an internal central portion of the fusing belt to heat the nip forming member and the fusing belt, an inner support member formed within the fusing belt to press a nip part of the nip forming member toward the rotatable pressing roller, and an outer support member formed outside the fusing belt, and both ends of the outer support member being engaged with the inner support member to thereby reinforce the strength of the inner support member and form a path for radiation heat to disperse. The support unit includes an inner support member placed within the belt unit, and an outer support member placed outside the belt unit, both ends of the outer support member being engaged with the inner support member to reinforce the strength of the inner support member and to form a path for a radiation heat to disperse.

Abstract translation: 定影装置包括可旋转的加压辊，通过从可旋转的加压辊传递的旋转力而旋转的定影带，夹持形成构件，其与定影带的内表面接触，以在可旋转的压制 辊和定影带，形成在定影带的大致中心部分的加热构件，以加热夹持形成构件和定影带;形成在定影带内的内部支撑构件，以挤压辊隙形成构件的夹持部分 朝向可旋转的压辊，以及形成在定影带外部的外支撑构件，并且外支撑构件的两端与内支撑构件接合，从而增强内支撑构件的强度，并形成用于辐射热的路径 分散。 支撑单元包括放置在皮带单元内的内支撑构件和设置在皮带单元外部的外支撑构件，外支撑构件的两端与内支撑构件接合以增强内支撑构件的强度， 形成辐射热分散的路径。