公开(公告)号：US10269845B2

公开(公告)日：2019-04-23

申请号：US15380764

申请日：2016-12-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Yun-Wei Cheng ,  Shiu-Ko Jangjian ,  Zhe-Ju Liu ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0216

Abstract: A method for forming an image sensor device is provided. The method includes forming a photodetector in a semiconductor substrate and forming a shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the shielding layer and partially removing the dielectric layer to form a recess. The method further includes partially removing the shielding layer through the recess. In addition, the method includes forming a filter in the recess after the shielding layer is partially removed.

公开(公告)号：US10157950B2

公开(公告)日：2018-12-18

申请号：US15866745

申请日：2018-01-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuo-Hung Lee ,  Chia-Pin Cheng ,  Fu-Cheng Chang ,  Volume Chien ,  Ching-Hung Kao

IPC: H01L27/146

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. An isolation feature is disposed in the semiconductor substrate to define a pixel region and a periphery region of the semiconductor substrate. A transistor gate is formed on the semiconductor substrate in the pixel region, in which the transistor gate has a first sidewall and a second sidewall opposite to the first sidewall. A photodiode is disposed in the semiconductor substrate and adjacent to the second sidewall of the transistor gate. A patterned spacer layer is formed on the photodiode and on the transistor gate. The patterned spacer layer includes a first sidewall spacer on the first sidewall of the transistor gate, and a protective structure covering the photodiode and a top surface of the transistor gate.

公开(公告)号：US10056426B2

公开(公告)日：2018-08-21

申请号：US13936240

申请日：2013-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Volume Chien ,  I-I Cheng ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  G02B3/00

CPC classification number: H01L27/14685 ,  G02B3/0056 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627

Abstract: A light guide grid can include a grid structure having a plurality of intersecting grid lines, each grid line having a width w, and a plurality of openings for photosensor elements between intersecting grid lines. The grid structure has a diagonal grid width between two adjacent ones of the plurality of openings in a diagonal direction. The diagonal grid width has a value exceeding approximately √3 w. An image sensor can include a light guide grid having a grid structure as described above and further include a micro-lens such as a sinking micro-lens and a color filter. A method of fabricating a light guide grid can include forming a grid above at least one photo sensor, the grid having intersecting grid lines of width w and a diagonal grid width in a diagonal direction having a value exceeding approximately √3 w.

公开(公告)号：US09825085B2

公开(公告)日：2017-11-21

申请号：US15409721

申请日：2017-01-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Chen Chiu-Jung ,  Volume Chien ,  Kuo-Cheng Lee ,  Yung-Lung Hsu ,  Chen Hsin-Chi

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.

公开(公告)号：US09761622B2

公开(公告)日：2017-09-12

申请号：US14849311

申请日：2015-09-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Volume Chien ,  Yung-Lung Hsu

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, a device layer, a composite grid structure, a passivation layer and color filters. The device layer overlies the substrate. The composite grid structure overlies the device layer. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer stacked on the metal grid layer. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

公开(公告)号：US09543352B2

公开(公告)日：2017-01-10

申请号：US14105063

申请日：2013-12-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Zen-Fong Huang ,  Chia-Yu Wei ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: A backside illuminated CMOS image sensor and a manufacturing method thereof are provided. Embedded micro-lenses disposed respectively on concave surfaces of a buffer oxide layer, wherein the concave surfaces are positioned to respectively align with photodiodes of pixel array of the CMOS image sensor. The embedded micro-lenses can confine incident light to the photodiodes to reduce optical crosstalk between adjacent pixels.

Abstract translation: 提供背面照明CMOS图像传感器及其制造方法。 分别设置在缓冲氧化物层的凹面上的嵌入式微透镜，其中凹面被分别对准与CMOS图像传感器的像素阵列的光电二极管对准。 嵌入式微透镜可以将入射光限制在光电二极管上，以减少相邻像素之间的光学串扰。

公开(公告)号：US20140264710A1

公开(公告)日：2014-09-18

申请号：US14166878

申请日：2014-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume Chien ,  Yun-Wei Cheng ,  I-I Cheng ,  Shiu-Ko Jangjian ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

IPC: H01L31/02

CPC classification number: H01L27/1464 ,  H01L23/562 ,  H01L27/14623 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Seal ring structures are provided with rounded corner junctions or corner junctions that include polygons. The seal rings surround generally rectangular semiconductor devices such as integrated circuits, image sensors and other devices. The seal ring includes a configuration of two sets of generally parallel opposed sides and the corner junctions are the junctions at which adjacent orthogonal seal ring sides are joined. The seal rings are trench structures or filled trench structures in various embodiments. The rounded corner junctions are formed by a curved arc or multiple line segments joined together at various angles. The corner junctions that include one or more enclosed polygons include polygons with at least one polygon side being formed by one of the seal ring sides.

Abstract translation: 密封环结构设有圆角拐角接头或角接头，包括多边形。 密封环围绕大体上矩形的半导体器件，例如集成电路，图像传感器和其它器件。 密封环包括两组大致平行的相对侧的构造，角接头是相邻的正交密封环侧连接的接合处。 在各种实施例中，密封环是沟槽结构或填充沟槽结构。 圆形的角接头由弯曲的弧形或以各种角度连接在一起的多个线段形成。 包括一个或多个封闭多边形的角接头包括多边形，其中至少一个多边形边由密封环侧之一形成。

公开(公告)号：US10797094B2

公开(公告)日：2020-10-06

申请号：US16390990

申请日：2019-04-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Yun-Wei Cheng ,  Shiu-Ko Jangjian ,  Zhe-Ju Liu ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0216

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate. The image sensor device further includes a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter.

公开(公告)号：US10484590B2

公开(公告)日：2019-11-19

申请号：US15060604

申请日：2016-03-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zen-Fong Huang ,  Volume Chien

IPC: H04N5/232 ,  H01L27/146 ,  H04N5/225

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

公开(公告)号：US20170345852A1

公开(公告)日：2017-11-30

申请号：US15228071

申请日：2016-08-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuo-Hung Lee ,  Chia-Pin Cheng ,  Fu-Cheng Chang ,  Volume Chien ,  Ching-Hung Kao

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14689

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. An isolation feature is disposed in the semiconductor substrate to define a pixel region and a periphery region of the semiconductor substrate. A transistor gate is formed on the semiconductor substrate in the pixel region, in which the transistor gate has a first sidewall and a second sidewall opposite to the first sidewall. A photodiode is disposed in the semiconductor substrate and adjacent to the second sidewall of the transistor gate. A patterned spacer layer is formed on the photodiode and on the transistor gate. The patterned spacer layer includes a first sidewall spacer on the first sidewall of the transistor gate, and a protective structure covering the photodiode and a top surface of the transistor gate.