利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.019 秒)

    Semiconductor Devices with Air Gate Spacer and Air Gate Cap
    12.
    发明申请
    Semiconductor Devices with Air Gate Spacer and Air Gate Cap 有权

    公开(公告)号：US20210376111A1

    公开(公告)日：2021-12-02

    申请号：US16888138

    申请日：2020-05-29

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Cheng-Chi Chuang ,  Lin-Yu Huang ,  Chia-Hao Chang ,  Yu-Ming Lin ,  Ting-Ya Lo ,  Chi-Lin Teng ,  Hsin-Yen Huang ,  Hai-Ching Chen

    IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/49

    摘要： A method includes providing a structure having a gate stack; first gate spacers; a second gate spacer over one of the first gate spacers and having an upper portion over a lower portion; a dummy spacer; an etch stop layer; and a dummy cap. The method further includes removing the dummy cap, resulting in a first void above the gate stack and between the first gate spacers; removing the dummy spacer, resulting in a second void above the lower portion and between the etch stop layer and the upper portion; depositing a layer of a decomposable material into the first and the second voids; depositing a seal layer over the etch stop layer, the first and the second gate spacers, and the layer of the decomposable material; and removing the layer of the decomposable material, thereby reclaiming at least portions of the first and the second voids.

    Capping layer overlying dielectric structure to increase reliability
    16.
    发明授权
    Capping layer overlying dielectric structure to increase reliability 有权

    公开(公告)号：US11355430B2

    公开(公告)日：2022-06-07

    申请号：US16885378

    申请日：2020-05-28

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Ting-Ya Lo ,  Chi-Lin Teng ,  Hai-Ching Chen ,  Hsin-Yen Huang ,  Shau-Lin Shue ,  Shao-Kuan Lee ,  Cheng-Chin Lee

    IPC分类号： H01L23/522 ,  H01L23/538 ,  H01L21/768

    摘要： Some embodiments relate to a semiconductor structure including an inter-level dielectric (ILD) layer overlying a substrate. A conductive via is disposed within the ILD layer. A plurality of conductive wires overlie the ILD layer. The plurality of conductive wires includes a first conductive wire laterally offset a second conductive wire. A dielectric structure is disposed laterally between the first and second conductive wires. The dielectric structure includes a first dielectric liner, a dielectric layer, and an air-gap. The air-gap is disposed between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is disposed along an upper surface of the dielectric structure. The dielectric capping layer continuously extends between opposing sidewalls of the dielectric structure and is laterally offset from the plurality of conductive wires.

    Dielectric capping structure overlying a conductive structure to increase stability
    17.
    发明授权
    Dielectric capping structure overlying a conductive structure to increase stability 有权

    公开(公告)号：US11322395B2

    公开(公告)日：2022-05-03

    申请号：US16876432

    申请日：2020-05-18

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Hsin-Yen Huang ,  Chi-Lin Teng ,  Hai-Ching Chen ,  Shau-Lin Shue ,  Shao-Kuan Lee ,  Cheng-Chin Lee ,  Ting-Ya Lo

    IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/528

    摘要： Some embodiments relate to a semiconductor structure including a first inter-level dielectric (ILD) structure overlying a substrate. A conductive contact directly overlies the substrate and is disposed within the first ILD structure. A conductive wire directly overlies the conductive contact. A conductive capping layer overlies the conductive wire such that the conductive capping layer continuously extends along an upper surface of the conductive wire. A second ILD structure overlies the conductive capping layer. The second ILD structure is disposed along opposing sides of the conductive wire. A pair of air-gaps are disposed within the second ILD structure. The conductive wire is spaced laterally between the pair of air-gaps. A dielectric capping layer is disposed along an upper surface of the conductive capping layer. The dielectric capping layer is spaced laterally between the pair of air-gaps and is laterally offset from an upper surface of the first ILD structure.

    CAPPING LAYER OVERLYING DIELECTRIC STRUCTURE TO INCREASE RELIABILITY
    20.
    发明申请
    CAPPING LAYER OVERLYING DIELECTRIC STRUCTURE TO INCREASE RELIABILITY 有权

    公开(公告)号：US20210193566A1

    公开(公告)日：2021-06-24

    申请号：US16885378

    申请日：2020-05-28

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Ting-Ya Lo ,  Chi-Lin Teng ,  Hai-Ching Chen ,  Hsin-Yen Huang ,  Shau-Lin Shue ,  Shao-Kuan Lee ,  Cheng-Chin Lee

    IPC分类号： H01L23/522 ,  H01L23/538 ,  H01L21/768

    摘要： Some embodiments relate to a semiconductor structure including an inter-level dielectric (ILD) layer overlying a substrate. A conductive via is disposed within the ILD layer. A plurality of conductive wires overlie the ILD layer. The plurality of conductive wires includes a first conductive wire laterally offset a second conductive wire. A dielectric structure is disposed laterally between the first and second conductive wires. The dielectric structure includes a first dielectric liner, a dielectric layer, and an air-gap. The air-gap is disposed between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is disposed along an upper surface of the dielectric structure. The dielectric capping layer continuously extends between opposing sidewalls of the dielectric structure and is laterally offset from the plurality of conductive wires.