公开(公告)号：US20210111027A1

公开(公告)日：2021-04-15

申请号：US17128408

申请日：2020-12-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yu LIN ,  Chi-Yu CHOU ,  Hsien-Ming LEE ,  Huai-Tei YANG ,  Chun-Chieh WANG ,  Yueh-Ching PAI ,  Chi-Jen YANG ,  Tsung-Ta TANG ,  Yi-Ting WANG

IPC: H01L21/28 ,  H01L29/49 ,  H01L21/3213 ,  H01L21/285

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

公开(公告)号：US20200052126A1

公开(公告)日：2020-02-13

申请号：US16654175

申请日：2019-10-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh WANG ,  Yu-Ting LIN ,  Yueh-Ching PAI ,  Shih-Chieh CHANG ,  Huai-Tei YANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L27/088 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/8234 ,  H01L21/02

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over a fin structure and a gate spacer formed on a sidewall surface of the gate structure. The semiconductor structure also includes a first source/drain (S/D) epitaxial layer formed in the fin structure and adjacent to the gate spacer, and a second S/D epitaxial layer formed over the first S/D epitaxial layer. A top surface of the second S/D layer is higher than a top surface of the first S/D epitaxial layer.

公开(公告)号：US20190148552A1

公开(公告)日：2019-05-16

申请号：US16231719

申请日：2018-12-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shahaji B. MORE ,  Zheng-Yang PAN ,  Chun-Chieh WANG ,  Cheng-Han LEE ,  Shih-Chieh CHANG

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/165 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/36 ,  H01L29/267 ,  H01L29/08 ,  H01L21/8238

Abstract: A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.

公开(公告)号：US20180294357A1

公开(公告)日：2018-10-11

申请号：US16004727

申请日：2018-06-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shahaji B. MORE ,  Zheng-Yang PAN ,  Chun-Chieh WANG ,  Cheng-Han LEE ,  Shih-Chieh CHANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/267 ,  H01L29/08 ,  H01L29/36

CPC classification number: H01L29/7848 ,  H01L21/823418 ,  H01L21/823814 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/267 ,  H01L29/36 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66636 ,  H01L29/7834

Abstract: Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain structure near the gate structure. The source/drain structure has an inner portion and an outer portion surrounding an entirety of the inner portion. The inner portion has a greater average dopant concentration than that of the outer portion.