公开(公告)号：US11777035B2

公开(公告)日：2023-10-03

申请号：US17849995

申请日：2022-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Jen Chang ,  Chih-Chien Chi ,  Chen-Yuan Kao ,  Hung-Wen Su ,  Kai-Shiang Kuo ,  Po-Cheng Shih ,  Jun-Yi Ruan

IPC: H01L21/00 ,  H01L29/78 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/7851 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/823821 ,  H01L23/528 ,  H01L23/5226 ,  H01L23/5329 ,  H01L27/0924 ,  H01L29/66545 ,  H01L29/66795

Abstract: A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

公开(公告)号：US10978404B2

公开(公告)日：2021-04-13

申请号：US16548341

申请日：2019-08-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Yu Lu ,  Yao-Jen Chang ,  Sao-Ling Chiu

IPC: H01L23/544 ,  H01L21/027 ,  H01L21/308

Abstract: Method for fabricating a semiconductor structure is provided. First features are formed in a first product region of each die area in a material layer through a first mask. Second features are formed in a second product region of each die area in the material layer through a second mask. Third features are formed in a third product region of each die area in the material layer through a third mask. Fourth features are formed in a fourth product region of each die area in the material layer through a fourth mask. Fifth features are formed in an alignment region of each die area in the material layer through the first through fourth masks. The first product region is adjacent to and in physical contact with the second and third product regions, and the first product region is free of the second, third, and fourth features.

公开(公告)号：US09567668B2

公开(公告)日：2017-02-14

申请号：US14183670

申请日：2014-02-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chien Chi ,  Shing-Chyang Pan ,  Kuan-Chia Chen ,  Yao-Jen Chang ,  Huang-Yi Huang ,  Ching-Hua Hsieh

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  C23C14/54

CPC classification number: C23C14/35 ,  C23C14/3492 ,  C23C14/542 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458

Abstract: Embodiments of a plasma apparatus are provided. The plasma apparatus includes a processing chamber and a wafer chuck disposed in the processing chamber. The plasma apparatus also includes a target element located over the wafer chuck and an electromagnet array located over the target element and having a number of electromagnets. Some of the electromagnets in a magnetic-field zone of the electromagnet array are enabled to generate a magnetic field adjacent to the target element. The magnetic-field zone is moved during a semiconductor manufacturing process.

Abstract translation: 提供了等离子体装置的实施例。 等离子体装置包括设置在处理室中的处理室和晶片卡盘。 等离子体装置还包括位于晶片卡盘上方的目标元件和位于目标元件上方并具有多个电磁体的电磁体阵列。 电磁体阵列的磁场区域中的一些电磁体能够产生与目标元件相邻的磁场。 磁场区在半导体制造过程中移动。