公开(公告)号：US20240145597A1

公开(公告)日：2024-05-02

申请号：US18402407

申请日：2024-01-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Lien Huang ,  Guan-Ren Wang ,  Ching-Feng Fu ,  Yun-Min Chang

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76877 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7853 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/2236

Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a first dielectric layer and a second dielectric layer successively over the source/drain regions; performing a first etching process to form an opening in the first dielectric layer and in the second dielectric layer, where the opening exposes an underlying electrically conductive feature; after performing the first etching process, performing a second etching process to enlarge a lower portion of the opening proximate to the substrate; and forming a contact plug in the opening after the second etching process.

公开(公告)号：US20220336666A1

公开(公告)日：2022-10-20

申请号：US17852899

申请日：2022-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Lien Huang ,  Guan-Ren Wang ,  Ching-Feng Fu ,  Yun-Min Chang

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/165 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a first dielectric layer and a second dielectric layer successively over the source/drain regions; performing a first etching process to form an opening in the first dielectric layer and in the second dielectric layer, where the opening exposes an underlying electrically conductive feature; after performing the first etching process, performing a second etching process to enlarge a lower portion of the opening proximate to the substrate; and forming a contact plug in the opening after the second etching process.

公开(公告)号：US20210408276A1

公开(公告)日：2021-12-30

申请号：US16917306

申请日：2020-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/768 ,  H01L21/8234

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.