公开(公告)号：US20240363664A1

公开(公告)日：2024-10-31

申请号：US18771095

申请日：2024-07-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Shih-Han Huang

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/1469

摘要： The present disclosure relates to an image sensor having an image sensing element surrounded by a BDTI structure, and an associated method of formation. In some embodiments, a first image sensing element and a second image sensing element are arranged next to one another within an image sensing die. A pixel dielectric stack is disposed along a back of the image sensing die overlying the image sensing elements. The pixel dielectric stack includes a first high-k dielectric layer and a second high-k dielectric layer. The BDTI structure is disposed between the first image sensing element and the second image sensing element and extends from the back of the image sensor die to a position within the image sensor die. The BDTI structure includes a trench filling layer surrounded by an isolation dielectric stack. The pixel dielectric stack has a composition different from that of the isolation dielectric stack.

公开(公告)号：US20240186356A1

公开(公告)日：2024-06-06

申请号：US18439543

申请日：2024-02-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Sheng-Chau Chen ,  Feng-Chi Hung ,  Sheng-Chan Li

IPC分类号： H01L27/146 ,  H01L21/762

CPC分类号： H01L27/1463 ,  H01L21/76224 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683

摘要： Image sensors and methods for forming the same are provided. A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, a metal grid disposed directly over the plurality of metal isolation features, and a plurality of microlens features disposed over the metal grid.

公开(公告)号：US20240030261A1

公开(公告)日：2024-01-25

申请号：US18150247

申请日：2023-01-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wen-I Hsu ,  Hsin-Hung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Wen-Chang Kuo

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14643 ,  H01L27/14636 ,  H01L27/14689

摘要： Various embodiments of the present disclosure are directed towards an image sensor including a plurality of photodetectors disposed within a substrate. The photodetectors are disposed respectively within a plurality of pixel regions. A floating diffusion node is disposed along a front-side surface of the substrate at a middle region of the plurality of pixel regions. A plurality of well regions is disposed within the substrate at corners of the plurality of pixel regions. An isolation structure extends into a back-side surface of the substrate. The isolation structure comprises a plurality of elongated isolation components disposed between adjacent pixel regions, a middle isolation component aligned with the floating diffusion node, and multiple peripheral isolation components aligned with the plurality of well regions. The elongated isolation components have a first height and the middle and peripheral isolation components have a second height less than the first height.

公开(公告)号：US20230395631A1

公开(公告)日：2023-12-07

申请号：US18446754

申请日：2023-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Sheng-Chau Chen ,  Feng-Chi Hung ,  Sheng-Chan Li

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14636 ,  H01L27/14685

摘要： An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure covering a sidewall of the conductive grid, and the isolation structure includes an opening or recess overlapping the photosensitive region. The isolation structure surrounds a peripheral region of the photosensitive region.

公开(公告)号：US20230361149A1

公开(公告)日：2023-11-09

申请号：US17882869

申请日：2022-08-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin-Hung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Wen-Chang Kuo ,  Hung-Wen Hsu ,  Shih-Chang Liu

IPC分类号： H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643

摘要： In some embodiments, the present disclosure relates to a method for forming an image sensor and associated device structure. A backside deep trench isolation (BDTI) structure is formed in a substrate separating a plurality of pixel regions. The BDTI structure encloses a plurality of photodiodes and comprising a first BDTI component arranged at a crossroad of the plurality of pixel regions and a second BDTI component arranged at remaining peripheries of the plurality of pixel regions. The first BDTI component has a first depth from a backside of the substrate smaller than a second depth of the second BDTI component.

公开(公告)号：US11810879B2

公开(公告)日：2023-11-07

申请号：US17698794

申请日：2022-03-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Gulbagh Singh ,  Chih-Ming Lee ,  Chi-Yen Lin ,  Wen-Chang Kuo ,  C. C. Liu

IPC分类号： H01L23/00 ,  H01L29/06 ,  H01L23/522 ,  H01L23/58 ,  H01L23/528 ,  H01L21/78 ,  H01L23/532 ,  G06F30/392 ,  G06F30/398 ,  H01L23/544 ,  H01L23/31 ,  H01L21/66 ,  H01L23/525

CPC分类号： H01L24/06 ,  G06F30/392 ,  G06F30/398 ,  H01L21/78 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5226 ,  H01L23/5329 ,  H01L23/562 ,  H01L23/585 ,  H01L24/03 ,  H01L29/0649 ,  H01L22/34 ,  H01L23/3114 ,  H01L23/525 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/544 ,  H01L2223/5446 ,  H01L2223/54426 ,  H01L2224/0239 ,  H01L2224/02311 ,  H01L2224/02371 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03464 ,  H01L2224/03614 ,  H01L2224/03827 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/061 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/2011 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/3512 ,  H01L2924/35121

摘要： A semiconductor structure includes a first contact pad over an interconnect structure. The semiconductor structure further includes a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The semiconductor structure further includes a first buffer layer over the first contact pad, wherein the first buffer layer is partially over the second contact pad, and an edge of the second contact pad farthest from the first contact pad extends beyond the first buffer layer.

公开(公告)号：US11309268B2

公开(公告)日：2022-04-19

申请号：US16904176

申请日：2020-06-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Gulbagh Singh ,  Chih-Ming Lee ,  Chi-Yen Lin ,  Wen-Chang Kuo ,  C. C. Liu

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L27/00 ,  H01L29/00 ,  G06F30/39 ,  H01L23/522 ,  H01L23/58 ,  H01L23/528 ,  H01L21/78 ,  H01L29/06 ,  H01L23/532 ,  G06F30/392 ,  G06F30/398 ,  H01L23/544 ,  H01L23/31 ,  H01L21/66 ,  H01L23/525

摘要： A method of designing a layout includes determining a first layout pattern, wherein the first layout pattern corresponds to a plurality of contact pads. The method further includes generating a second layout pattern. The method further includes checking whether an edge of the second layout pattern overlaps the first layout pattern. The method further includes adjusting the second layout pattern so that the edge of the second layout pattern overlaps the first layout pattern in response to a determination that the edge of the second layout pattern is separated from the first layout pattern.