公开(公告)号：US20130288467A1

公开(公告)日：2013-10-31

申请号：US13979564

申请日：2011-06-09

申请人： Yuji Ebiike ,  Takahiro Nakatani ,  Hiroshi Watanabe ,  Yoshio Fujii ,  Sunao Aya ,  Yoshiyuki Nakaki ,  Tsuyoshi Kawakami ,  Shuhei Nakata

发明人： Yuji Ebiike ,  Takahiro Nakatani ,  Hiroshi Watanabe ,  Yoshio Fujii ,  Sunao Aya ,  Yoshiyuki Nakaki ,  Tsuyoshi Kawakami ,  Shuhei Nakata

IPC分类号： H01L21/266

CPC分类号： H01L21/266 ,  H01L21/0465 ,  H01L23/544 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/872 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device capable of suppressing generation of a high electric field and preventing a dielectric breakdown from occurring, and a method of manufacturing the same. The method of manufacturing a semiconductor device includes (a) preparing an n+ substrate to be a ground constituted by a silicon carbide semiconductor of a first conductivity type, (b) forming a recess structure surrounding an element region on the n+ substrate by using a resist pattern, and (c) forming a guard ring injection layer to be an impurity layer of a second conductivity type in a recess bottom surface and a recess side surface in the recess structure by impurity injection through the resist pattern, and a corner portion of the recess structure is covered with the impurity layer.

摘要翻译： 能够抑制高电场的产生和防止发生电介质击穿的半导体装置及其制造方法。 制造半导体器件的方法包括：（a）制备作为由第一导电类型的碳化硅半导体构成的接地的n +衬底，（b）通过使用抗蚀剂形成围绕n +衬底上的元件区域的凹陷结构 图案，以及（c）通过通过抗蚀剂图案的杂质注入，在凹陷结构的凹槽底表面和凹陷侧表面中形成作为第二导电类型的杂质层的保护环注入层，以及 凹陷结构被杂质层覆盖。

公开(公告)号：US08554491B2

公开(公告)日：2013-10-08

申请号：US13314534

申请日：2011-12-08

申请人： Toshiaki Hisada ,  Hiroshi Kurokawa ,  Nobuhiko Oshida ,  Masafumi Yamamoto ,  Takumi Washio ,  Jun-ichi Okada ,  Hiroshi Watanabe ,  Seiryo Sugiura

发明人： Toshiaki Hisada ,  Hiroshi Kurokawa ,  Nobuhiko Oshida ,  Masafumi Yamamoto ,  Takumi Washio ,  Jun-ichi Okada ,  Hiroshi Watanabe ,  Seiryo Sugiura

IPC分类号： G01N33/50

CPC分类号： G06F19/3437 ,  G06F19/00 ,  G06T11/206 ,  G16H50/50

摘要： A modeling device is disclosed that easily projects characteristic information obtained from an object onto a differently-shaped object, even if the object, from which the characteristic information is obtained, has a complex shape. A modeling device in one embodiment of the present invention includes a virtually electrifying section to calculate an electric potential at a spot in a heart at the time when a predetermined voltage is applied to the heart, and a projecting section to project a fiber orientation onto a heart model created on the basis of shape information that is input to the input section. The projecting section specifies a spot to be a target of projection on the basis of the electric potential obtained by the virtually electrifying section. Use of the electric potential in specifying the spot makes it possible to easily project the fiber orientation onto any heart having complex and various shapes.

摘要翻译： 公开了一种建模装置，即使获得特征信息的对象具有复杂形状，也容易将从对象获得的特征信息投射到不同形状的对象上。 在本发明的一个实施例中的建模装置包括：虚拟带电部分，用于在将预定电压施加到心脏时计算心脏中的点处的电位;以及突出部分，用于将纤维取向投影到 基于输入到输入部分的形状信息创建的心脏模型。 投影部根据实际充电部所得到的电位来指定作为投影对象的点。 在指定斑点时使用电位使得可以容易地将纤维取向投射到具有复杂和各种形状的任何心脏上。

公开(公告)号：US08531140B2

公开(公告)日：2013-09-10

申请号：US13747574

申请日：2013-01-23

申请人： Satoshi Ibori ,  Yoshihiro Uchino ,  Hiroshi Watanabe ,  Masahiro Hiraga

发明人： Satoshi Ibori ,  Yoshihiro Uchino ,  Hiroshi Watanabe ,  Masahiro Hiraga

IPC分类号： H02P3/00

CPC分类号： H02P3/22 ,  H02M1/32 ,  H02M5/458 ,  H02P3/14

摘要： The performance of a power transducer is improved while efficiently using a power semiconductor also by managing the permissible duty factor of the power semiconductor in the regenerative braking circuit provided in the power transducer. The user is allowed to set, through an operation panel provided on the power transducer, the resistance value of the regenerative braking resistor for thermally consuming the rotational energy generated during motor deceleration. The power transducer performs the steps of: calculating the current which flows in the regenerative braking circuit from the resistance value setting; obtaining the generation loss of the power semiconductor in the regenerative braking circuit with the calculated current value; and determining the permissible duty factor of the power semiconductor from the obtained generation loss.

摘要翻译： 功率传感器的性能得到改善，同时通过管理设置在功率传感器中的再生制动电路中的功率半导体的允许占空比来有效地使用功率半导体。 允许用户通过设置在功率传感器上的操作面板设置再生制动电阻器的电阻值，用于热消耗电动机减速期间产生的旋转能量。 功率传感器执行以下步骤：从电阻值设定计算在再生制动电路中流动的电流; 以所计算的电流值获得再生制动电路中的功率半导体的发电损失; 以及从所获得的发电损失确定功率半导体的允许占空比。

公开(公告)号：US08519773B2

公开(公告)日：2013-08-27

申请号：US13163110

申请日：2011-06-17

申请人： Hiroshi Watanabe ,  Hiroaki Kojima ,  Kazuya Machida

发明人： Hiroshi Watanabe ,  Hiroaki Kojima ,  Kazuya Machida

IPC分类号： H03K17/687

CPC分类号： H03K17/04123 ,  H03K17/04206 ,  H03K2217/0018 ,  H03K2217/0054

摘要： A method for switching between first and second voltages is provided. Initially, a first voltage is provided from a first input terminal to an output terminal through a first MOS transistor, and the first MOS transistor is deactivated. A back-gate of a second MOS transistor is shorted to the output terminal in response to the deactivation of the first MOS transistor and after a settling interval, and the second MOS transistor is activated while its back-gate is shorted to the terminal so as to provide a second voltage from a second input terminal to the output terminal.

摘要翻译： 提供了用于在第一和第二电压之间切换的方法。 首先，通过第一MOS晶体管从第一输入端子到输出端子提供第一电压，并且第一MOS晶体管被去激活。 第二MOS晶体管的背栅极响应于第一MOS晶体管的去激活而在稳定间隔之后与输出端短路，并且第二MOS晶体管在其栅极与端子短路的同时被激活，从而 以从第二输入端子向输出端子提供第二电压。

公开(公告)号：US08400362B2

公开(公告)日：2013-03-19

申请号：US12546037

申请日：2009-08-24

申请人： Hiroshi Watanabe

发明人： Hiroshi Watanabe

IPC分类号： H01Q1/24

CPC分类号： H01Q1/243 ,  H01Q7/00 ,  H01Q9/30 ,  H01Q9/40 ,  H01Q21/28 ,  Y10T29/49016

摘要： A radio communication apparatus configured to be used for first radio communication and second radio communication which are different from each other is provided. The radio communication apparatus has a first antenna, a coupling reduction element, a magnetic material sheet and a second antenna. The first antenna is configured to be used for the first radio communication, and is formed by a conductive line wound in a plane like a coil. The coupling reduction element is formed by a plane-shaped conductor, provided almost parallel to the plane of the first antenna, and configured to be put in a condition of electrical floating. The magnetic material sheet is provided between the first antenna and the coupling reduction element. The second antenna is configured to be used for the second radio communication, and is provided close to at least a portion of the first antenna.

摘要翻译： 提供了一种被配置为用于彼此不同的第一无线电通信和第二无线电通信的无线电通信装置。 无线电通信装置具有第一天线，耦合减小元件，磁性材料片和第二天线。 第一天线被配置为用于第一无线电通信，并且由缠绕在类似线圈的平面中的导线形成。 联接减速元件由平面形状的导体形成，该平面形状的导体几乎平行于第一天线的平面，并被构造成处于电浮动状态。 磁性材料板设置在第一天线和耦合减速元件之间。 第二天线被配置为用于第二无线电通信，并且被设置在第一天线的至少一部分附近。

公开(公告)号：US08367536B2

公开(公告)日：2013-02-05

申请号：US13319739

申请日：2010-07-16

申请人： Hiroshi Watanabe ,  Naruhisa Miura

发明人： Hiroshi Watanabe ,  Naruhisa Miura

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068

摘要： The present invention includes steps below: (a) forming, on a drift layer, a first ion implantation mask and a second ion implantation mask individually by photolithography to form a third ion implantation mask, the first ion implantation mask having a mask region corresponding to a channel region and having a first opening corresponding to a source region, the second ion implantation mask being positioned in contact with an outer edge of the first ion implantation mask and configured to form a base region; (b) implanting impurities of a first conductivity type from the first opening with an ion beam using the third ion implantation mask to form a source region in an upper layer part of the silicon carbide drift layer; (c) removing the first ion implantation mask after the formation of the source region; and (d) implanting impurities of a second conductivity type with an ion beam from a second opening formed in the second ion implantation mask after the removal of the first ion implantation mask to form a base region deeper than the source region in the upper layer part of the drift layer.

摘要翻译： 本发明包括以下步骤：（a）通过光刻法分别在漂移层上形成第一离子注入掩模和第二离子注入掩模，以形成第三离子注入掩模，第一离子注入掩模具有对应于 沟道区，具有对应于源极区的第一开口，所述第二离子注入掩模定位成与所述第一离子注入掩模的外边缘接触并且被配置为形成基区; （b）使用第三离子注入掩模，用离子束从第一开口注入第一导电类型的杂质，以在碳化硅漂移层的上层部分中形成源极区; （c）在形成源极区域之后去除第一离子注入掩模; 以及（d）在除去第一离子注入掩模之后，从形成在第二离子注入掩模中的第二开口用离子束注入第二导电类型的杂质以形成比上层部分中的源极区更深的基极区 的漂移层。

公开(公告)号：US08350309B2

公开(公告)日：2013-01-08

申请号：US13310148

申请日：2011-12-02

申请人： Hiroshi Watanabe ,  Hiroshi Nakamura ,  Kazuhiro Shimizu ,  Seiichi Aritome ,  Toshitake Yaegashi ,  Yuji Takeuchi ,  Kenichi Imamiya ,  Ken Takeuchi ,  Hideko Oodaira

发明人： Hiroshi Watanabe ,  Hiroshi Nakamura ,  Kazuhiro Shimizu ,  Seiichi Aritome ,  Toshitake Yaegashi ,  Yuji Takeuchi ,  Kenichi Imamiya ,  Ken Takeuchi ,  Hideko Oodaira

IPC分类号： H01L27/108 ,  H01L29/73

CPC分类号： G11C16/0483 ,  G11C16/10

摘要： A select gate transistor has a select gate electrode composed of a first-level conductive layer and a second-level conductive layer. The first-level conductive layer has contact areas. The second-level conductive layer has its portions removed that are located above the contact areas. Two adjacent select gate electrodes that are adjacent to each other in the column direction are arranged such that the contact areas of one select gate electrode are not opposed to the contact areas of the other select gate electrode. One select gate electrode has its first- and second-level conductive layers removed in their portions that are opposed to the contact areas of the other select gate electrode.

摘要翻译： 选择栅极晶体管具有由第一级导电层和第二级导电层构成的选择栅电极。 第一级导电层具有接触区域。 第二级导电层的部分被去除，位于接触区域上方。 在列方向上彼此相邻的两个相邻的选择栅电极被布置成使得一个选择栅电极的接触区域不与另一个选择栅电极的接触区域相对。 一个选择栅电极在其与另一个选择栅电极的接触区域相对的部分中移除其第一和第二级导电层。

公开(公告)号：US20120319762A1

公开(公告)日：2012-12-20

申请号：US13163110

申请日：2011-06-17

申请人： Hiroshi Watanabe ,  Hiroaki Kojima ,  Kazuya Machida

发明人： Hiroshi Watanabe ,  Hiroaki Kojima ,  Kazuya Machida

IPC分类号： G05F1/10

CPC分类号： H03K17/04123 ,  H03K17/04206 ,  H03K2217/0018 ,  H03K2217/0054

摘要： A method for switching between first and second voltages is provided. Initially, a first voltage is provided from a first input terminal to an output terminal through a first MOS transistor, and the first MOS transistor is deactivated. A back-gate of a second MOS transistor is shorted to the output terminal in response to the deactivation of the first MOS transistor and after a settling interval, and the second MOS transistor is activated while its back-gate is shorted to the terminal so as to provide a second voltage from a second input terminal to the output terminal.

摘要翻译： 提供了用于在第一和第二电压之间切换的方法。 首先，通过第一MOS晶体管从第一输入端子到输出端子提供第一电压，并且第一MOS晶体管被去激活。 第二MOS晶体管的背栅极响应于第一MOS晶体管的去激活而在稳定间隔之后与输出端短路，并且第二MOS晶体管在其栅极与端子短路的同时被激活，从而 以从第二输入端子向输出端子提供第二电压。

公开(公告)号：US20120299292A1

公开(公告)日：2012-11-29

申请号：US13474015

申请日：2012-05-17

申请人： Hiroshi Watanabe ,  Akihito Higashihara ,  Toshikazu Matsuda

发明人： Hiroshi Watanabe ,  Akihito Higashihara ,  Toshikazu Matsuda

IPC分类号： F16L19/00

CPC分类号： F16L23/22 ,  F16L41/086 ,  F25B41/003

摘要： A first component and a second component are connected with each other in a manner that a first passage of the first component and a second passage of the second component communicate with each other through a communication part. A seal component is disposed between the first component and the second component to provide a sealing between the first passage and the second passage. A ring component is arranged to surround the communication part, and is located adjacent to the communication part rather than the seal component. The ring component restricts the communication part from having an excess increase in a cross-sectional area.

摘要翻译： 第一部件和第二部件以第一部件的第一通道和第二部件的第二通道通过连通部彼此连通的方式彼此连接。 密封部件设置在第一部件和第二部件之间，以在第一通道和第二通道之间提供密封。 环形部件布置成围绕通信部分，并且位于邻近通信部分而不是密封部件。 环形部件限制了连通部分在横截面积上的过度增加。

公开(公告)号：US20120283270A1

公开(公告)日：2012-11-08

申请号：US13516488

申请日：2010-02-26

申请人： Hideki Matsubayashi ,  Kenji Yamamoto ,  Hiroshi Watanabe ,  Lee Kian Hong

发明人： Hideki Matsubayashi ,  Kenji Yamamoto ,  Hiroshi Watanabe ,  Lee Kian Hong

IPC分类号： A61K31/495 ,  A61P25/00

CPC分类号： A61K38/12 ,  A23L2/52 ,  A23L2/66 ,  A23L13/30 ,  A23L33/10 ,  A23V2002/00 ,  A61K9/0095 ,  C07D241/08 ,  C07K5/06078 ,  A23V2250/204

摘要： The present invention aims to provide extracts or beverages containing 2,5-piperazinedione,3,6-bis(phenylmethyl)-,(3S,6S)—, which is a useful substance with an improving effect on learning motivation, in an easy-to-ingest form and at a high concentration. Extracts or beverages whose ratio between the content of 2,5-piperazinedione,3,6-bis(phenyl-methyl)-,(3S,6S)— (unit: μg/100 g) and Brix(Bx) is 6 (μg/100 g)/Bx or more can be ingested continuously over a long period of time as foods and beverages useful for improvement of learning motivation.

摘要翻译： 本发明的目的是提供一种含有2,5-哌嗪二酮，3,6-双（苯基甲基） - ，（3S，6S） - 的提取物或饮料，其是有益物质，对学习动机具有改善的作用， 以高浓度摄取形式。 2,5-哌嗪二酮，3,6-双（苯基甲基） - ，（3S，6S） - （单位：μg/ 100g）和白利糖度（Bx）含量之比为6（μg）的提取物或饮料 / 100克）/ Bx或以上可长期摄取，因为食品和饮料有助于改善学习动机。