公开(公告)号：US20050189849A1

公开(公告)日：2005-09-01

申请号：US11062619

申请日：2005-02-23

申请人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki ,  Kenichi Takeda ,  Kiyotaka Wasa

发明人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki ,  Kenichi Takeda ,  Kiyotaka Wasa

IPC分类号： B41J2/045 ,  B41J2/01 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  B41J2/16 ,  H01G4/12 ,  H01G4/33 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/316 ,  H02N2/00

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： A dielectric element having a dielectric layer provided between an upper electrode layer and a lower electrode layer, wherein the dielectric layer has a first dielectric layer and a second dielectric layer mutually different in composition, and composition of at least one component of the first dielectric layer changes as to a thickness direction of the first dielectric layer in proximity to a boundary between the first dielectric layer and the second dielectric layer.

摘要翻译： 一种电介质元件，其具有设置在上电极层和下电极层之间的电介质层，其中所述电介质层具有第一介电层和第二介电层，所述第一电介质层和第二电介质层的组成相互不同，并且所述第一介电层的至少一个部件的组成 在第一介电层和第二介电层之间的边界附近的第一介电层的厚度方向的变化。

公开(公告)号：US07984977B2

公开(公告)日：2011-07-26

申请号：US11769091

申请日：2007-06-27

申请人： Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

发明人： Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

IPC分类号： B41J2/045

CPC分类号： H01L41/1876 ,  H01L41/319 ,  Y10T29/42

摘要： A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.

摘要翻译： 压电元件包括​​压电体，该压电体包括在基板上外延生长的由ABO3钙钛矿氧化物晶体构成的膜和设置在压电体上的一对电极层，其中，压电体在与侧面相反的一侧具有多孔区域 的基底。

公开(公告)号：US07759845B2

公开(公告)日：2010-07-20

申请号：US11683100

申请日：2007-03-07

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

IPC分类号： H01L41/08

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

摘要： An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

摘要翻译： 可以提供作为光调制元件的透明度和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极。 压电体膜不含有层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

公开(公告)号：US20080012909A1

公开(公告)日：2008-01-17

申请号：US11773009

申请日：2007-07-03

申请人： Takanori MATSUDA ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku

发明人： Takanori MATSUDA ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku

IPC分类号： B41J2/295 ,  H01L41/08 ,  H01L41/22

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/314 ,  Y10T29/42

摘要： A method of manufacturing a piezoelectric body, formed from a film made of an ABO3 perovskite oxide crystal epitaxially grown on a substrate, comprises forming a film containing an AOx crystal by using an oxide containing an A element and a B element by heating the substrate to a temperature which is equal to or higher than a temperature at which the AOx crystal is formed, and which is lower than a temperature at which the ABO3 perovskite oxide crystal is formed and changing the film containing the AOx crystal into a film made of the ABO3 perovskite oxide crystal by heating the substrate to a temperature which exceeds a temperature at which the AOx crystal can be present, and which is equal to or higher than a temperature at which the ABO3 perovskite oxide crystal is formed.

摘要翻译： 制造由在衬底上外延生长的由ABO 3钙钛矿氧化物晶体制成的膜形成的压电体的方法包括通过以下步骤形成包含AO xS晶体的膜： 使用含有A元素和B元素的氧化物，通过将基板加热到等于或高于形成AO xS晶体的温度，并且低于温度 在其上形成ABO 3钙钛矿氧化物晶体，并将含有AO 结晶的膜改变为由ABO 3钙钛矿氧化物制成的膜 通过将衬底加热到​​超过可能存在AO xS晶体的温度的温度，并且其等于或高于ABO 3 形成了钙钛矿型氧化物晶体。

公开(公告)号：US20070060467A1

公开(公告)日：2007-03-15

申请号：US11499722

申请日：2006-08-07

申请人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

发明人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

IPC分类号： C04B35/495 ,  C04B35/00

CPC分类号： C04B35/499 ,  C04B35/472 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/79 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316

摘要： A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure represented by ABO3 where site A includes Pb as a main component and site B includes a plurality of elements, wherein the perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of .

摘要翻译： 由ABO 3 3代表的单晶结构的钙钛矿型氧化物或单轴取向晶体结构，其中位置A包括Pb作为主要组分，并且位置B包括多个元素，其中钙钛矿型氧化物 包括选自正方晶，菱方，正交，立方，假立方和单斜晶系的多个晶相，并且多个晶相沿<100>的方向取向。

公开(公告)号：US20060012648A1

公开(公告)日：2006-01-19

申请号：US10532020

申请日：2004-01-30

申请人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

发明人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

IPC分类号： B41J2/045

CPC分类号： H01L41/41 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

公开(公告)号：US07874649B2

公开(公告)日：2011-01-25

申请号：US11774145

申请日：2007-07-06

申请人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

发明人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

摘要翻译： 压电元件包括​​设置在基板上的压电膜和与压电膜接触设置并利用弯曲模式的一对电极。 该压电薄膜包括由四方晶体构成的并由具有与压电薄膜的膜表面平行的（100）面的晶体形成的a畴的a畴，a畴包括具有正常 基本上平行于压电薄膜的主弯曲方向的（001）面的轴线和与压电薄膜的主弯曲方向垂直的法线轴（001）面的B域，A畴具有 体积比例大于50体积％，相对于A结构域的体积和B结构域的体积的总和。

公开(公告)号：US07874648B2

公开(公告)日：2011-01-25

申请号：US11773009

申请日：2007-07-03

申请人： Takanori Matsuda ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku

发明人： Takanori Matsuda ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku

IPC分类号： B41J2/045 ,  H04R17/00

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/314 ,  Y10T29/42

摘要： A method of manufacturing a piezoelectric body, formed from a film made of an ABO3 perovskite oxide crystal epitaxially grown on a substrate, includes forming a film containing an AOx crystal by using an oxide containing an A element and a B element by heating the substrate to a temperature which is equal to or higher than a temperature at which the AOx crystal is formed, and which is lower than a temperature at which the ABO3 perovskite oxide crystal is formed and changing the film containing the AOx crystal into a film made of the ABO3 perovskite oxide crystal by heating the substrate to a temperature which exceeds a temperature at which the AOx crystal can be present, and which is equal to or higher than a temperature at which the ABO3 perovskite oxide crystal is formed.

摘要翻译： 由在基板外延生长的由ABO 3钙钛矿型氧化物晶体构成的膜形成的压电体的制造方法包括通过使用含有A元素和B元素的氧化物将基板加热而形成含有AOx晶体的膜， 该温度等于或高于形成AOx晶体的温度，并且低于形成ABO 3钙钛矿氧化物晶体的温度，并将含有AOx晶体的膜改变为由ABO 3制成的膜 通过将基板加热到超过可能存在AO x的温度的温度，并且等于或高于形成ABO 3钙钛矿氧化物晶体的温度的钙钛矿氧化物晶体。

公开(公告)号：US07517063B2

公开(公告)日：2009-04-14

申请号：US11491027

申请日：2006-07-24

申请人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

发明人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

IPC分类号： B41J2/045

CPC分类号： H01L41/41 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

摘要翻译： 一种包括上电极，压电和/或电致伸缩材料和下电极的压电元件，其特征在于压电和/或电致伸缩材料是由通式ABO 3构成的复合氧化物，压电和/或电致伸缩材料具有 双晶。

公开(公告)号：US20080012910A1

公开(公告)日：2008-01-17

申请号：US11774145

申请日：2007-07-06

申请人： Takanori MATSUDA ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

发明人： Takanori MATSUDA ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

IPC分类号： B41J2/045 ,  B05D5/12 ,  H01L41/09

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

摘要翻译： 压电元件包括​​设置在基板上的压电膜和与压电膜接触设置并利用弯曲模式的一对电极。 该压电薄膜包括由四方晶体构成的并由具有与压电薄膜的膜表面平行的（100）面的晶体形成的a畴的a畴，A畴包括具有正常的 基本上平行于压电薄膜的主弯曲方向的（001）面的轴线和与压电薄膜的主弯曲方向垂直的法线轴（001）面的B域，A畴具有 体积比例大于50体积％，相对于A结构域的体积和B结构域的体积的总和。