公开(公告)号：US20070246804A1

公开(公告)日：2007-10-25

申请号：US11534941

申请日：2006-09-25

申请人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kazuhiko Endo

发明人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kazuhiko Endo

IPC分类号： H01L23/52 ,  C07F7/04

CPC分类号： H01L21/7681 ,  C23C16/30 ,  C23C16/36 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76808 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced. Furthermore, because the etching selection ratio of SiOC to SiCN as well as that of SiOC to SiC are small, if SiCN or SiC is used as the etching stopper film, the surface of the metal interconnection layer may be oxidized at the time of photoresist removal, which gives rise to a problem of high contact resistance. The present invention relates to an organic film made of one of SiOCH, SiCHN and SiCH that is formed using, as a source, a polyorganosilane whose C/Si ratio is at least 5 or greater and molecular weight is 100 or greater, and a semiconductor device wherein such an organic insulating film is used, and more particularly to a semiconductor device having a trench structure.

摘要翻译： 目前被广泛研究的SiC和SiCN的介电常数分别为4.5〜5左右，SiOC为2.8〜3.0左右。 随着器件尺寸减小引起的互连尺寸和互连间距的进一步小型化，出现了强烈的要求，即应进一步降低介电常数。 此外，由于SiOC与SiCN的蚀刻选择比以及SiOC与SiC的蚀刻选择比小，因此如果使用SiCN或SiC作为蚀刻停止膜，则金属配线层的表面在光刻胶去除时可能被氧化 ，这导致高接触电阻的问题。 本发明涉及使用以C / Si比为5以上且分子量为100以上的聚有机硅烷作为源的SiOCH，SiCHN和SiCH之一构成的有机膜，以及半导体 使用这种有机绝缘膜的装置，更具体地说涉及具有沟槽结构的半导体器件。

公开(公告)号：US20060060975A1

公开(公告)日：2006-03-23

申请号：US11219784

申请日：2005-09-07

申请人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto

发明人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76834 ,  H01L21/76804 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device comprises a semiconductor substrate (not shown), an interlayer insulating film 102 formed on the semiconductor substrate and a multiple-layered insulating film 140 provided on the interlayer insulating film 102. The semiconductor device comprises an electric conductor, which is provided to extend through the multiple-layered insulating film 140 and includes a Cu film 120 and a barrier metal film 118. The barrier metal film 118 is provided so as to cover side surfaces and a bottom surface of the Cu film 120. This semiconductor device comprises an insulating film 116, which is disposed between the multiple-layered insulating film 140 and the electric conductor (i.e., Cu film 120 and barrier metal film 118).

摘要翻译： 提供了一种用于抑制在半导体器件中发生的绝缘击穿的技术。 半导体器件包括半导体衬底（未示出），形成在半导体衬底上的层间绝缘膜102和设置在层间绝缘膜102上的多层绝缘膜140。 半导体器件包括导电体，其设置成延伸穿过多层绝缘膜140并且包括Cu膜120和阻挡金属膜118。 阻挡金属膜118被设置为覆盖Cu膜120的侧表面和底表面。 该半导体器件包括设置在多层绝缘膜140和导电体（即Cu膜120和阻挡金属膜118）之间的绝缘膜116。

公开(公告)号：US20070032070A1

公开(公告)日：2007-02-08

申请号：US11542212

申请日：2006-10-04

申请人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto

发明人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto

IPC分类号： H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76804 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device includes a semiconductor substrate (not shown), an interlayer insulating film 102 formed on the semiconductor substrate and a multiple-layered insulating film 140 provided on the interlayer insulating film 102. The semiconductor device also includes an electric conductor that extends through the multiple-layered insulating film 140 and includes a Cu film 120 and a barrier metal film 118. The barrier metal film 118 is covers side surfaces and a bottom surface of the Cu film 120. An insulating film 116 is disposed between the multiple-layered insulating film 140 and the electric conductor (i.e., Cu film 120 and barrier metal film 118).

摘要翻译： 提供了一种用于抑制在半导体器件中发生的绝缘击穿的技术。 半导体器件包括半导体衬底（未示出），形成在半导体衬底上的层间绝缘膜102和设置在层间绝缘膜102上的多层绝缘膜140.半导体器件还包括延伸穿过 多层绝缘膜140，并且包括Cu膜120和阻挡金属膜118.阻挡金属膜118覆盖Cu膜120的侧表面和底表面。绝缘膜116设置在多层绝缘体 膜140和导电体（即Cu膜120和阻挡金属膜118）。

公开(公告)号：US07531891B2

公开(公告)日：2009-05-12

申请号：US11006529

申请日：2004-12-08

申请人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

发明人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

IPC分类号： H01L23/58 ,  H01L29/00 ,  H01L21/31

CPC分类号： H01L21/76801 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

摘要： A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film density distribution, in which the film density is gradually changes. A SiOC film is deposited to a thickness of 300 nm via a plasma CVD process, in which a flow rate of trimethylsilane gas is stepwise increased. In this case, the film density of the deposited SiOC film is gradually decreased by stepwise increasing the flow rate of trimethylsilane gas. Since trimethylsilane contains methyl group, trimethylsilane has more bulky molecular structure in comparison with monosilane or the like. Thus, the film density is decreased by increasing the amount of trimethylsilane in the reactant gas.

摘要翻译： 通过在具有膜密度分布的层间绝缘膜中提供多层膜，其中膜密度逐渐变化，提供了具有改善的构成层间绝缘膜的膜之间粘附性的半导体器件。 通过等离子体CVD工艺沉积厚度为300nm的SiOC膜，其中三甲基硅烷气体的流量逐步增加。 在这种情况下，通过逐步增加三甲基硅烷气体的流量，沉积的SiOC膜的膜密度逐渐降低。 由于三甲基硅烷含有甲基，因此与甲硅烷等相比，三甲基硅烷具有更大的分子结构。 因此，通过增加反应气体中的三甲基硅烷的量来降低膜密度。

公开(公告)号：US07910474B2

公开(公告)日：2011-03-22

申请号：US12098190

申请日：2008-04-04

申请人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Kazuhiko Endo

发明人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Kazuhiko Endo

IPC分类号： H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76832 ,  H01L23/5222 ,  H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to provide a semiconductor device which comprises a barrier film having a high etching selection ratio of the interlayer insulating film thereto, a good preventive function against the Cu diffusion, a low dielectric constant and excellent adhesiveness to the Cu interconnection and a manufacturing method thereof.The barrier film (for instance, a second barrier film 6) disposed between the interconnection or the via plug and its overlying interlayer insulating film is made to have a layered structure made of a plurality of films containing silicon and carbon (preferably, silicon, carbon and nitrogen), with different carbon contents, and, in particular, a low-carbon-concentration film 6a with a small carbon content is set to be a lower layer therein and a high-carbon-concentration film 6b with a large carbon content is set to be an upper layer therein, whereby the effectual prevention against the Cu diffusion, a high etching selection ratio and good adhesiveness to the Cu interconnection can be certainly provided by the presence of the low-carbon-concentration film 6a, while the overall dielectric constant can be well reduced by the presence of the high-carbon-concentration film 6b.

摘要翻译： 本发明的目的是提供一种半导体器件，其包括其间的层间绝缘膜的蚀刻选择率高的阻挡膜，对Cu扩散的良好的预防功能，低介电常数和对Cu互连的优异粘合性 及其制造方法。 设置在互连或通孔插塞及其上覆层间绝缘膜之间的阻挡膜（例如，第二阻挡膜6）具有由多个含有硅和碳的膜（优选硅，碳 和氮），具有不同的碳含量，特别是具有小碳含量的低碳浓度膜6a被设定为下层，并且具有大碳含量的高碳浓度膜6b为 在其中设置为上层，由此通过低碳浓度膜6a的存在可以确定地提供对Cu扩散的有效防止，高的蚀刻选择率和对Cu互连的良好的粘合性，而整个电介质 通过高碳浓度膜6b的存在可以很好地降低常数。

公开(公告)号：US07763979B2

公开(公告)日：2010-07-27

申请号：US11534941

申请日：2006-09-25

申请人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kazuhiko Endo

发明人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kazuhiko Endo

IPC分类号： H01L25/34

CPC分类号： H01L21/7681 ,  C23C16/30 ,  C23C16/36 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76808 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced.Furthermore, because the etching selection ratio of SiOC to SiCN as well as that of SiOC to SiC are small, if SiCN or SiC is used as the etching stopper film, the surface of the metal interconnection layer may be oxidized at the time of photoresist removal, which gives rise to a problem of high contact resistance.The present invention relates to an organic film made of one of SiOCH, SiCHN and SiCH that is formed using, as a source, a polyorganosilane whose C/Si ratio is at least 5 or greater and molecular weight is 100 or greater, and a semiconductor device wherein such an organic insulating film is used, and more particularly to a semiconductor device having a trench structure.

摘要翻译： 目前被广泛研究的SiC和SiCN的介电常数分别为4.5〜5左右，SiOC为2.8〜3.0左右。 随着器件尺寸减小引起的互连尺寸和互连间距的进一步小型化，出现了强烈的要求，即应进一步降低介电常数。 此外，由于SiOC与SiCN的蚀刻选择比以及SiOC与SiC的蚀刻选择比小，因此如果使用SiCN或SiC作为蚀刻停止膜，则金属配线层的表面在光刻胶去除时可能被氧化 ，这导致高接触电阻的问题。 本发明涉及使用以C / Si比为5以上且分子量为100以上的聚有机硅烷作为源的SiOCH，SiCHN和SiCH之一构成的有机膜，以及半导体 使用这种有机绝缘膜的装置，更具体地说涉及具有沟槽结构的半导体器件。

公开(公告)号：US07473630B2

公开(公告)日：2009-01-06

申请号：US11542212

申请日：2006-10-04

申请人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto

发明人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto

IPC分类号： H01L21/20 ,  H01L21/44

CPC分类号： H01L21/76834 ,  H01L21/76804 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device includes a semiconductor substrate (not shown), an interlayer insulating film 102 formed on the semiconductor substrate and a multiple-layered insulating film 140 provided on the interlayer insulating film 102. The semiconductor device also includes an electric conductor that extends through the multiple-layered insulating film 140 and includes a Cu film 120 and a barrier metal film 118. The barrier metal film 118 is covers side surfaces and a bottom surface of the Cu film 120. An insulating film 116 is disposed between the multiple-layered insulating film 140 and the electric conductor (i.e., Cu film 120 and barrier metal film 118).

摘要翻译： 提供了一种用于抑制在半导体器件中发生的绝缘击穿的技术。 半导体器件包括半导体衬底（未示出），形成在半导体衬底上的层间绝缘膜102和设置在层间绝缘膜102上的多层绝缘膜140.半导体器件还包括延伸穿过 多层绝缘膜140，并且包括Cu膜120和阻挡金属膜118.阻挡金属膜118覆盖Cu膜120的侧表面和底表面。绝缘膜116设置在多层绝缘体 膜140和导电体（即Cu膜120和阻挡金属膜118）。

公开(公告)号：US07391115B2

公开(公告)日：2008-06-24

申请号：US10768676

申请日：2004-02-02

申请人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Kazuhiko Endo

发明人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Kazuhiko Endo

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76832 ,  H01L23/5222 ,  H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to provide a semiconductor device which comprises a barrier film having a high etching selection ratio of the interlayer insulating film thereto, a good preventive function against the Cu diffusion, a low dielectric constant and excellent adhesiveness to the Cu interconnection and a manufacturing method thereof.The barrier film (for instance, a second barrier film 6) disposed between the interconnection or the via plug and its overlying interlayer insulating film is made to have a layered structure made of a plurality of films containing silicon and carbon (preferably, silicon, carbon and nitrogen), with different carbon contents, and, in particular, a low-carbon-concentration film 6a with a small carbon content is set to be a lower layer therein and a high-carbon-concentration film 6b with a large carbon content is set to be an upper layer therein, whereby the effectual prevention against the Cu diffusion, a high etching selection ratio and good adhesiveness to the Cu interconnection can be certainly provided by the presence of the low-carbon-concentration film 6a, while the overall dielectric constant can be well reduced by the presence of the high-carbon-concentration film 6b.

摘要翻译： 本发明的目的是提供一种半导体器件，其包括其间的层间绝缘膜的蚀刻选择率高的阻挡膜，对Cu扩散的良好的预防功能，低介电常数和对Cu互连的优异粘合性 及其制造方法。 设置在互连或通孔插塞及其上覆层间绝缘膜之间的阻挡膜（例如，第二阻挡膜6）具有由多个含有硅和碳的膜（优选硅，碳 和氮），具有不同的碳含量，特别是具有小碳含量的低碳浓度膜6a被设定为下层，并且具有大碳的高碳浓度膜6b 含量被设定为上层，由此可以通过低碳浓度膜6a的存在来确定地提供对Cu扩散的有效防止，高的蚀刻选择率和对Cu互连的良好的粘附性，同时 通过存在高碳浓度膜6b可以很好地降低总介电常数。

公开(公告)号：US07135776B2

公开(公告)日：2006-11-14

申请号：US11219784

申请日：2005-09-07

申请人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto

发明人： Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto

IPC分类号： H01L23/48

CPC分类号： H01L21/76834 ,  H01L21/76804 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device includes a semiconductor substrate (not shown), an interlayer insulating film 102 formed on the semiconductor substrate and a multiple-layered insulating film 140 provided on the interlayer insulating film 102. The semiconductor device also includes an electric conductor that extends through the multiplelayered insulating film 140 and includes a Cu film 120 and a barrier metal film 118. The barrier metal film 118 is covers side surfaces and a bottom surface of the Cu film 120. An insulating film 116 is disposed between the multiple-layered insulating film 140 and the electric conductor (i.e., Cu film 120 and barrier metal film 118).

摘要翻译： 提供了一种用于抑制在半导体器件中发生的绝缘击穿的技术。 半导体器件包括半导体衬底（未示出），形成在半导体衬底上的层间绝缘膜102和设置在层间绝缘膜102上的多层绝缘膜140。 半导体器件还包括延伸穿过多层绝缘膜140并包括Cu膜120和阻挡金属膜118的电导体。 阻挡金属膜118覆盖Cu膜120的侧表面和底表面。 绝缘膜116设置在多层绝缘膜140和导电体（即Cu膜120和阻挡金属膜118）之间。

公开(公告)号：US20050167844A1

公开(公告)日：2005-08-04

申请号：US11006529

申请日：2004-12-08

申请人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

发明人： Koichi Ohto ,  Tatsuya Usami ,  Yoichi Sasaki

IPC分类号： H01L23/522 ,  H01L21/316 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC分类号： H01L21/76801 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

摘要： A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film density distribution, in which the film density is gradually changes. A SiOC film is deposited to a thickness of 300 nm via a plasma CVD process, in which a flow rate of trimethylsilane gas is stepwise increased. In this case, the film density of the deposited SiOC film is gradually decreased by stepwise increasing the flow rate of trimethylsilane gas. Since trimethylsilane contains methyl group, trimethylsilane has more bulky molecular structure in comparison with monosilane or the like. Thus, the film density is decreased by increasing the amount of trimethylsilane in the reactant gas.

摘要翻译： 通过在具有膜密度分布的层间绝缘膜中提供多层膜，其中膜密度逐渐变化，提供了具有改善的构成层间绝缘膜的膜之间粘附性的半导体器件。 通过等离子体CVD工艺沉积厚度为300nm的SiOC膜，其中三甲基硅烷气体的流量逐步增加。 在这种情况下，通过逐步增加三甲基硅烷气体的流量，沉积的SiOC膜的膜密度逐渐降低。 由于三甲基硅烷含有甲基，因此与甲硅烷等相比，三甲基硅烷具有更大的分子结构。 因此，通过增加反应气体中的三甲基硅烷的量来降低膜密度。