公开(公告)号：US08320717B2

公开(公告)日：2012-11-27

申请号：US12414318

申请日：2009-03-30

申请人： Tomohiko Hasegawa ,  Masaki Kondo

发明人： Tomohiko Hasegawa ,  Masaki Kondo

IPC分类号： G06K9/54 ,  G06K9/32 ,  G06K15/02

CPC分类号： H04N1/0035 ,  H04N1/00347 ,  H04N1/0044 ,  H04N1/32112 ,  H04N2201/001 ,  H04N2201/0087 ,  H04N2201/0094 ,  H04N2201/3226 ,  H04N2201/325 ,  H04N2201/3271 ,  H04N2201/3273

摘要： An image processor includes a storing unit, an image determining unit, and an output unit. The storing unit stores a selecting condition. The image determining unit determines whether the image corresponding to the set of the image data satisfies the selecting condition. The output unit outputs an image list including either one of the image that is determined to satisfy the selecting condition by the image determining unit and a resized image resized from the image that is determined to satisfy the selecting condition by the image determining unit.

摘要翻译： 图像处理器包括存储单元，图像确定单元和输出单元。 存储单元存储选择条件。 图像确定单元确定与图像数据的集合对应的图像是否满足选择条件。 输出单元输出包括由图像确定单元确定为满足选择条件的图像中的任一个的图像列表和由图像确定单元确定为满足选择条件的图像大小调整大小的图像。

公开(公告)号：US08315104B2

公开(公告)日：2012-11-20

申请号：US12491638

申请日：2009-06-25

申请人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

发明人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

IPC分类号： G11C11/34

CPC分类号： G11C16/3454 ,  G11C16/0483

摘要： A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

摘要翻译： 非易失性半导体存储器件包括：存储单元，其存储数据并且能够被电气重写;电位地连接到存储单元的电流路径的一端的位线;控制电路，其执行验证操作 在将数据写入存储单元之后检查写入结果;以及电压设置电路，其在验证操作和读取操作中设置位线的充电电压，并使读取操作中的充电电压高于充电电压 验证操作。

公开(公告)号：US08144982B2

公开(公告)日：2012-03-27

申请号：US11492005

申请日：2006-07-25

申请人： Yasunari Yoshida ,  Masaki Kondo ,  Takeshi Watanabe

发明人： Yasunari Yoshida ,  Masaki Kondo ,  Takeshi Watanabe

IPC分类号： G06K9/00

CPC分类号： H04N1/62 ,  H04N1/628

摘要： An adjusting portion adjusts values of lightness, chroma, and hue. A change-amount setting portion sets an amount of change for each of lightness, chroma, and hue. A weighting-curve storing portion stores weighting curves for each of lightness, chroma, and hue. A weighting-factor determining portion determines, based on the weighting curves, weighting factors for the values of lightness, chroma, and hue. A specific-color-index determining portion determines a specific color index by multiplying each of the weighting factors determined by the weighting-factor determining portion. An adjustment-amount determining portion determines an adjustment amount by multiplying, by the specific color index, the amount of change set by the change-amount setting portion, and determines adjusted values of lightness, chroma, and hue based on the adjustment amount. An adjusted-color-image obtaining portion obtains an adjusted color image based on the adjusted values.

摘要翻译： 调整部分调节亮度，色度和色调的值。 变化量设定部设定亮度，色度，色调各自的变化量。 权重曲线存储部分存储亮度，色度和色调中的每一个的加权曲线。 权重因子确定部分基于加权曲线确定亮度，色度和色相值的加权因子。 特定颜色索引确定部分通过乘以由加权因子确定部分确定的每个加权因子来确定特定颜色索引。 调整量确定部分通过根据特定颜色指数乘以由变化量设置部分设置的变化量来确定调整量，并且基于调整量确定亮度，色度和色调的调整值。 经调整后的彩色图像获取部分根据调整后的值获得调整后的彩色图像。

公开(公告)号：US07876474B2

公开(公告)日：2011-01-25

申请号：US11931697

申请日：2007-10-31

申请人： Masaki Kondo

发明人： Masaki Kondo

IPC分类号： G06F3/12

CPC分类号： G06T5/40 ,  G06T5/008 ,  H04N1/407

摘要： A first lower-range generating portion generates a pixel value of an output image based on a first nonlinear function in a first lower range where a pixel value of a subject pixel is lower than a predetermine value. The first upper-range generating portion generates the pixel value of the output image based on a first monotonically increasing function in a first upper range where the pixel value of the subject pixel is greater than or equal to the predetermine value. The pixel value of the output image increases toward a first maximum output luminance value as the pixel value of the subject pixel increases. The first maximum output luminance value is greater than a luminance value obtained by correcting a maximum pixel value of the original image based on the first nonlinear function. The first maximum output luminance value is proximate to the maximum pixel value of the original image.

摘要翻译： 第一低范围产​​生部分基于主题像素的像素值低于预定值的第一较低范围中的第一非线性函数产生输出图像的像素值。 第一高范围产生部分基于主题像素的像素值大于或等于预定值的第一上限范围中的第一单调递增函数来生成输出图像的像素值。 随着被摄体像素的像素值增加，输出图像的像素值朝向第一最大输出亮度值增加。 第一最大输出亮度值大于通过基于第一非线性函数校正原始图像的最大像素值而获得的亮度值。 第一最大输出亮度值接近原始图像的最大像素值。

公开(公告)号：US20100158369A1

公开(公告)日：2010-06-24

申请号：US12647182

申请日：2009-12-24

申请人： Masaki Kondo

发明人： Masaki Kondo

IPC分类号： G06K9/40

CPC分类号： G06T5/007 ,  H04N1/628

摘要： An image processing device may create corrected image data by correcting object image data by utilizing base image data. The image processing device may determine a first polar coordinate value which represents first pixels in the object image data, calculate a first orthogonal coordinate by executing an orthogonal transformation on the first polar coordinate value, determine a second polar coordinate value which represents second pixels in the base image data, calculate a second orthogonal coordinate value by executing an orthogonal transformation on the second polar coordinate value, and create the corrected image data by correcting the object image data such that a coordinate value of each particular pixel in the object image data approaches the second orthogonal coordinate value. The each particular pixel may be included in a surrounding area of the first orthogonal coordinate value.

摘要翻译： 图像处理装置可以通过利用基本图像数据来校正对象图像数据来创建校正图像数据。 图像处理装置可以确定表示对象图像数据中的第一像素的第一极坐标值，通过对第一极坐标值执行正交变换来计算第一正交坐标，确定表示第二极坐标值的第二极坐标值， 通过对第二极坐标值执行正交变换来计算第二正交坐标值，并且通过校正对象图像数据来创建校正图像数据，使得对象图像数据中的每个特定像素的坐标值接近 第二正交坐标值。 每个特定像素可以被包括在第一正交坐标值的周围区域中。

公开(公告)号：US20100117135A1

公开(公告)日：2010-05-13

申请号：US12564349

申请日：2009-09-22

申请人： Makoto MIZUKAMI ,  Kiyohito Nishihara ,  Masaki Kondo ,  Takashi Izumida ,  Hirokazu Ishida ,  Atsushi Fukumoto ,  Fumiki Aiso ,  Daigo Ichinose ,  Tadashi Iguchi

发明人： Makoto MIZUKAMI ,  Kiyohito Nishihara ,  Masaki Kondo ,  Takashi Izumida ,  Hirokazu Ishida ,  Atsushi Fukumoto ,  Fumiki Aiso ,  Daigo Ichinose ,  Tadashi Iguchi

IPC分类号： H01L27/12 ,  H01L21/86

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524

摘要： A semiconductor device is formed on a SOI substrate having a semiconductor substrate, a buried oxide film formed on the semiconductor substrate, and a semiconductor layer formed on the buried oxide film, the semiconductor substrate having a first conductive type, the semiconductor layer having a second conductive type, wherein the buried oxide film has a first opening opened therethrough for communicating the semiconductor substrate with the semiconductor layer, the semiconductor layer is arranged to have a first buried portion buried in the first opening in contact with the semiconductor substrate and a semiconductor layer main portion positioned on the first buried portion and on the buried oxide film, the semiconductor substrate has a connection layer buried in a surface of the semiconductor substrate and electrically connected to the first buried portion in the first opening, the connection layer having the second conductive type, and the semiconductor device includes a contact electrode buried in a second opening, a side surface of the contact electrode being connected to the semiconductor layer main portion, a bottom surface of the contact electrode being connected to the connection layer, the second opening passing through the semiconductor layer main portion and the buried oxide film, and the second opening reaching a surface portion of the connection layer.

摘要翻译： 半导体器件形成在具有半导体衬底的SOI衬底上，形成在半导体衬底上的掩埋氧化膜以及形成在掩埋氧化膜上的半导体层，该半导体衬底具有第一导电类型，该半导体层具有第二导电型 导电型，其中所述掩埋氧化物膜具有通过其开口的第一开口，用于使所述半导体衬底与所述半导体层连通，所述半导体层被布置为具有埋在所述第一开口中的与所述半导体衬底接触的第一掩埋部分和半导体层 主要部分位于第一掩埋部分和掩埋氧化膜上，半导体衬底具有埋在半导体衬底的表面中并与第一开口中的第一掩埋部分电连接的连接层，连接层具有第二导电 类型，并且半导体器件包括接触电极 阴极埋入第二开口中，接触电极的侧表面连接到半导体层主体部分，接触电极的底表面连接到连接层，第二开口穿过半导体层主体部分和埋设 氧化膜，第二开口到达连接层的表面部分。

公开(公告)号：US07706619B2

公开(公告)日：2010-04-27

申请号：US11605956

申请日：2006-11-30

申请人： Tomohiko Hasegawa ,  Masaki Kondo

发明人： Tomohiko Hasegawa ,  Masaki Kondo

IPC分类号： G06K9/36

CPC分类号： G06T3/4007

摘要： A reduction-ratio acquiring section acquires a reduction ratio for reducing a source image into an output image. A division-number determining section determines a division number nDev for dividing each pixel constituting the source image into (nDev×nDev) division blocks, where nDev is an integer that is greater than or equal to two. A process-block-number calculating section calculates, based on the reduction ratio, a number of division blocks corresponding to a single pixel in the output image. An average-pixel-value calculating section calculates, for the single pixel, an average pixel value based on pixel values of the division blocks. The pixel values of the division blocks are pixels values of corresponding pixels in the source image. A repeating section allows the process-block-number calculating section and the average-pixel-value calculating section to repeat same processes for each pixel in the output image, thereby obtaining an entire output image.

摘要翻译： 缩小率获取部获取将源图像缩小为输出图像的缩小率。 分割数确定部分确定用于将构成源图像的每个像素分成（nDev×nDev）个分割块的分割数nDev，其中nDev是大于或等于2的整数。 处理块数计算部分基于缩小比率计算与输出图像中的单个像素相对应的分割块的数量。 平均像素值计算部分针对单个像素计算基于分割块的像素值的平均像素值。 分割块的像素值是源图像中的相应像素的像素值。 重复部分允许处理块数计算部分和平均像素值计算部分对输出图像中的每个像素重复相同的处理，从而获得整个输出图像。

公开(公告)号：US20090323432A1

公开(公告)日：2009-12-31

申请号：US12491638

申请日：2009-06-25

申请人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

发明人： Takuya Futatsuyama ,  Toshiaki Edahiro ,  Norihiro Fujita ,  Fumitaka Arai ,  Tohru Maruyama ,  Masaki Kondo

IPC分类号： G11C16/06 ,  G11C5/14

CPC分类号： G11C16/3454 ,  G11C16/0483

摘要： A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

摘要翻译： 非易失性半导体存储器件包括：存储单元，其存储数据并且能够被电气重写;电位地连接到存储单元的电流路径的一端的位线;控制电路，其执行验证操作 在将数据写入存储单元之后检查写入结果;以及电压设置电路，其在验证操作和读取操作中设置位线的充电电压，并使读取操作中的充电电压高于充电电压 验证操作。

公开(公告)号：US07632752B2

公开(公告)日：2009-12-15

申请号：US11827687

申请日：2007-07-13

申请人： Masaki Kondo

发明人： Masaki Kondo

IPC分类号： C23G5/02 ,  B05D3/10

CPC分类号： H05K3/421 ,  H05K3/0055 ,  H05K2203/0315 ,  H05K2203/0789 ,  H05K2203/1157

摘要： A metallic copper and resin composite body manufacturing method of forming a copper wiring layer that forms an inner layer circuit, establishing an insulating layer with a resin on said wiring layer, forming via holes which expose the copper surface under the insulative layer, and depositing a metal on the copper surface that is exposed at the bottom of the via holes. The method includes a step of: removing copper oxide which forms on the surface of the copper that is exposed in the bottom of the via holes using a phosphoric acid aqueous solution with a pH between 1 and 3. The method suppresses haloing is and via holes with excellent solder bonding are formed.

摘要翻译： 一种金属铜和树脂复合体制造方法，其形成形成内层电路的铜布线层，在所述布线层上形成树脂绝缘层，形成在绝缘层下露出铜表面的通孔， 在通孔底部露出的铜表面上的金属。 该方法包括以下步骤：使用pH在1和3之间的磷酸水溶液去除在孔的底部暴露于铜的表面上形成的氧化铜。该方法抑制晕圈和通孔 形成良好的焊接。

公开(公告)号：US20090101960A1

公开(公告)日：2009-04-23

申请号：US12248483

申请日：2008-10-09

申请人： Nobutoshi AOKI ,  Takashi Izumida ,  Masaki Kondo ,  Fumitaka Arai

发明人： Nobutoshi AOKI ,  Takashi Izumida ,  Masaki Kondo ,  Fumitaka Arai

IPC分类号： H01L29/788 ,  H01L29/68

CPC分类号： H01L27/11529 ,  H01L27/11524 ,  H01L27/11526

摘要： According to an aspect of the present invention, there is provided a semiconductor memory device including: a semiconductor substrate having: a contact region; a select gate region; and a memory cell region; a first element isolation region formed in the contact region and having a first depth; a second element isolation region formed in the select gate region and having a second depth; and a third element isolation region formed in the memory cell region and having a third depth which is smaller than the first depth.

摘要翻译： 根据本发明的一个方面，提供了一种半导体存储器件，包括：半导体衬底，具有：接触区域; 选择栅极区; 和存储单元区域; 形成在所述接触区域中并且具有第一深度的第一元件隔离区; 形成在所述选择栅极区中并具有第二深度的第二元件隔离区; 以及形成在所述存储单元区域中并且具有小于所述第一深度的第三深度的第三元件隔离区域。