公开(公告)号：US5555154A

公开(公告)日：1996-09-10

申请号：US367745

申请日：1995-01-03

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： C01G23/00 ,  C23C16/40 ,  C23C16/448 ,  C30B29/32 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01G4/10

CPC分类号： H01L28/40 ,  C23C16/409 ,  C23C16/448 ,  H01L21/31691 ,  H01L28/55

摘要： The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

摘要翻译： 多源原料以液态溶解在四氢呋喃中，同时并且稳定地输送到反应器，由此形成具有良好重复性的用于具有良好性能的电容器的电介质薄膜。 本发明提供了氧化物系介电薄膜的CVD原料，其中有机金属原料溶解在四氢呋喃中，有机金属原料的金属原子至少选自Pb，Ti，Zr或碱土金属 。 结果，可以通过CVD法形成稳定的电介质薄膜，并且电介质薄膜可以用于存储器件的电容器。

公开(公告)号：US08598920B2

公开(公告)日：2013-12-03

申请号：US13260069

申请日：2010-05-07

申请人： Hiroshi Nakatake ,  Shinichi Kinouchi ,  Tatsuya Kitamura

发明人： Hiroshi Nakatake ,  Shinichi Kinouchi ,  Tatsuya Kitamura

IPC分类号： H03K3/00

CPC分类号： H03K17/168 ,  H02M1/08 ,  H03K17/163

摘要： A gate driving circuit for driving a voltage-driven switching device is provided with a current limiting circuit for limiting a gate current ig that flows into a gate terminal through a gate resistor at turn-on to a current limit value IL which defines an upper limit value. The current limit value IL is set at a value which is larger than a gate current value I2 at turn-on of the switching device during a period when the Miller effect occurs but is smaller than a gate current value I1 at a point in time when a main current begins to flow at turn-on in a case where the gate current ig is not limited by the current limiting circuit. This arrangement makes a variation in a collector current of the switching device moderate at turn-on thereof when the collector current begins to flow, thereby reducing high-frequency noise.

摘要翻译： 用于驱动电压驱动开关器件的栅极驱动电路设置有限流电路，用于限制通过导通时的栅极电阻流入栅极端子的栅极电流ig，限定限定上限的电流限制值IL 值。 电流限制值IL被设定为大于开关器件接通时的栅极电流值I2的值，该值在发生米勒效应的时段期间小于在时间点的栅极电流值I1 在栅极电流ig不受限流电路限制的情况下，主电流在导通时开始流动。 这种布置使得当集电极电流开始流动时，开关装置的集电极电流的变化在其接通时中等，从而降低高频噪声。

公开(公告)号：US20120326646A1

公开(公告)日：2012-12-27

申请号：US13582834

申请日：2010-10-29

申请人： Takeshi Tanaka ,  Shinichi Kinouchi

发明人： Takeshi Tanaka ,  Shinichi Kinouchi

IPC分类号： H02P6/14 ,  H01L29/267 ,  H02M5/45

CPC分类号： H02M5/4585 ,  B60L9/22 ,  B60L2200/26 ,  H03K17/127

摘要： A power semiconductor module includes an element pair formed by connecting, in anti-parallel to each other, an IGBT and an FWD group in which an FWD, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FED, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series and an element pair formed by connecting, in anti-parallel to each other, an IGBT and an FWD group in which a FWD, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FWD, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series. The element pairs are connected in parallel.

摘要翻译： 功率半导体模块包括通过以彼此反并联的方式连接IGBT和FWD组形成的元件对，其中FWD（其导通期间的电压降特性具有负温度系数）以及FED， 在导通期间具有正温度系数的电压降特性串联连接，并且通过将IGBT和FWD组反向并联连接形成的元件对，其中FWD，其电压降特性 在导通时具有负温度系数，并且在导通期间具有正温度系数的电压降特性的FWD串联连接。 元件对并联连接。

公开(公告)号：US20120013371A1

公开(公告)日：2012-01-19

申请号：US13260069

申请日：2010-05-07

申请人： Hiroshi Nakatake ,  Shinichi Kinouchi ,  Tatsuya Kitamura

发明人： Hiroshi Nakatake ,  Shinichi Kinouchi ,  Tatsuya Kitamura

IPC分类号： H03K3/00

CPC分类号： H03K17/168 ,  H02M1/08 ,  H03K17/163

摘要： A gate driving circuit for driving a voltage-driven switching device is provided with a current limiting circuit for limiting a gate current ig that flows into a gate terminal through a gate resistor at turn-on to a current limit value IL which defines an upper limit value. The current limit value IL is set at a value which is larger than a gate current value I2 at turn-on of the switching device during a period when the Miller effect occurs but is smaller than a gate current value I1 at a point in time when a main current begins to flow at turn-on in a case where the gate current ig is not limited by the current limiting circuit. This arrangement makes a variation in a collector current of the switching device moderate at turn-on thereof when the collector current begins to flow, thereby reducing high-frequency noise.

摘要翻译： 用于驱动电压驱动开关器件的栅极驱动电路设置有限流电路，用于限制通过导通时的栅极电阻流入栅极端子的栅极电流ig，限定限定上限的电流限制值IL 值。 电流限制值IL被设定为大于开关器件接通时的栅极电流值I2的值，该值在发生米勒效应的时段期间小于在时间点的栅极电流值I1 在栅极电流ig不受限流电路限制的情况下，主电流在导通时开始流动。 这种布置使得当集电极电流开始流动时，开关装置的集电极电流的变化在其接通时中等，从而降低高频噪声。

公开(公告)号：US06236559B1

公开(公告)日：2001-05-22

申请号：US09461732

申请日：1999-12-16

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： H01G410

CPC分类号： H01L28/40 ,  C23C16/409 ,  C23C16/448 ,  H01L21/31691 ,  H01L28/55

摘要： A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including tetrahydrofuran to form a liquid solution; vaporizing the liquid solution including the at least one organometallic compound; and forming the metal oxide dielectric thin film by depositing at least a portion of the at least one organometallic compound from the vaporized solution on a substrate.

摘要翻译： 包括通过化学气相沉积沉积的金属氧化物电介质膜的电容器包括将至少一种有机金属CVD前体化合物溶解在包括四氢呋喃的溶剂体系中以形成液体溶液; 蒸发包含至少一种有机金属化合物的液体溶液; 以及通过将至少一部分来自所述汽化溶液的所述至少一种有机金属化合物沉积在基底上而形成所述金属氧化物电介质薄膜。

公开(公告)号：US06063443A

公开(公告)日：2000-05-16

申请号：US677317

申请日：1996-07-02

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： C01G23/00 ,  C23C16/40 ,  C23C16/448 ,  C30B29/32 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108

CPC分类号： H01L28/40 ,  C23C16/409 ,  C23C16/448 ,  H01L21/31691 ,  H01L28/55

摘要： The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

摘要翻译： 多源原料以液态溶解在四氢呋喃中，同时并且稳定地输送到反应器，由此形成具有良好重复性的用于具有良好性能的电容器的电介质薄膜。 本发明提供了氧化物系介电薄膜的CVD原料，其中有机金属原料溶解在四氢呋喃中，有机金属原料的金属原子至少选自Pb，Ti，Zr或碱土金属 。 结果，可以通过CVD法形成稳定的电介质薄膜，并且电介质薄膜可以用于存储器件的电容器。