公开(公告)号：US08598570B2

公开(公告)日：2013-12-03

申请号：US12490641

申请日：2009-06-24

申请人： Keiichiro Yutani ,  Takumi Yamaga ,  Atsushi Onodera

发明人： Keiichiro Yutani ,  Takumi Yamaga ,  Atsushi Onodera

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L27/283 ,  G02F1/1368 ,  H01L27/3251 ,  H01L27/3274 ,  H01L27/3276 ,  H01L51/0005 ,  H01L51/0541

摘要： An organic transistor array includes gate electrodes provided on a substrate, source and drain electrodes provided above or below the gate electrodes via a gate insulator layer, and an organic semiconductor layer opposing the gate electrodes via the gate insulator layer, and forming a channel region between mutually adjacent source and drain electrodes. The organic transistor array in a plan view is sectioned into sections each forming a single pixel, and each section has a closest packed structure.

摘要翻译： 有机晶体管阵列包括设置在基板上的栅极电极，经由栅极绝缘体层设置在栅极电极上方或下方的源极和漏极，以及经由栅极绝缘体层与栅极电极相对的有机半导体层，以及在栅极电极之间形成沟道区域 相邻的源极和漏极。 平面图中的有机晶体管阵列被分成各自形成单个像素的部分，并且每个部分具有最紧密的堆叠结构。

公开(公告)号：US08207528B2

公开(公告)日：2012-06-26

申请号：US12670325

申请日：2008-10-17

申请人： Keiichiro Yutani ,  Hidenori Tomono ,  Takumi Yamaga

发明人： Keiichiro Yutani ,  Hidenori Tomono ,  Takumi Yamaga

IPC分类号： H01L35/24

CPC分类号： H01L51/0015 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0558

摘要： An organic transistor includes a substrate; a gate electrode and a gate insulating film sequentially formed on the substrate in the stated order; and a source electrode, a drain electrode, and an organic semiconductor layer formed on at least the gate insulating film. Ultraviolet light is radiated to the substrate from a side without the gate electrode, transmitted through the substrate and the gate insulating film, reflected at the gate electrode, and absorbed at the organic semiconductor layer. Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light.

摘要翻译： 有机晶体管包括基板; 栅极电极和栅极绝缘膜，按顺序形成在基板上; 以及形成在至少栅极绝缘膜上的源电极，漏电极和有机半导体层。 紫外光从没有栅电极的一侧辐射到基板，透过基板和栅极绝缘膜，在栅电极处被反射并在有机半导体层被吸收。 吸收了紫外线的有机半导体层的电导率低于未吸收紫外线的有机半导体层的电导率。

公开(公告)号：US08071432B2

公开(公告)日：2011-12-06

申请号：US11517737

申请日：2006-09-07

申请人： Yoshikazu Akiyama ,  Takumi Yamaga ,  Takanori Tano ,  Hidenori Tomono ,  Akishige Murakami ,  Hitoshi Arita ,  Mayuka Araumi

发明人： Yoshikazu Akiyama ,  Takumi Yamaga ,  Takanori Tano ,  Hidenori Tomono ,  Akishige Murakami ,  Hitoshi Arita ,  Mayuka Araumi

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L51/0021 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0022

摘要： A method of manufacturing an organic transistor active substrate is disclosed. The organic transistor active substrate includes an organic transistor in which a first electrode is formed on a substrate, a first insulating film is formed on the first electrode, a pair of second electrodes is formed on the first insulating film, and an active layer made of an organic semiconductor material is formed on the pair of second electrodes. The organic transistor is laminated with a second insulating film, and the second insulating film is laminated with a third electrode which is electrically coupled to one of the second electrodes via a through-hole provided through the second insulating film. The first electrode is formed by inkjet ejection; the first insulating film is formed by coating; the pair of second electrodes is formed by inkjet ejection; the active layer is formed by inkjet ejection; the second insulating film is formed by screen printing; and the third electrode is formed by screen printing.

摘要翻译： 公开了制造有机晶体管有源衬底的方法。 有机晶体管有源基板包括其中第一电极形成在基板上的有机晶体管，在第一电极上形成第一绝缘膜，在第一绝缘膜上形成一对第二电极，并且在第一绝缘膜上形成有源层， 在一对第二电极上形成有机半导体材料。 有机晶体管与第二绝缘膜层压，并且第二绝缘膜与通过第二绝缘膜提供的通孔电耦合到第二电极之一的第三电极层叠。 第一电极通过喷墨喷射形成; 第一绝缘膜通过涂布形成; 该一对第二电极通过喷墨喷射形成; 活性层通过喷墨喷射形成; 第二绝缘膜通过丝网印刷形成; 并且第三电极通过丝网印刷形成。

公开(公告)号：US20110266549A1

公开(公告)日：2011-11-03

申请号：US13181144

申请日：2011-07-12

申请人： Atsushi ONODERA ,  Hidenori Tomono ,  Koei Suzuki ,  Takanori Tano ,  Takumi Yamaga

发明人： Atsushi ONODERA ,  Hidenori Tomono ,  Koei Suzuki ,  Takanori Tano ,  Takumi Yamaga

IPC分类号： H01L29/786 ,  B32B3/00 ,  H05K1/00

CPC分类号： H01L51/0022 ,  H01L51/0023 ,  H01L2924/0002 ,  Y10T428/24752 ,  Y10T428/2495 ,  H01L2924/00

摘要： A disclosed laminated structure includes a wettability-variable layer containing a wettability-variable material whose surface energy changes when energy is applied thereto and including at least a high-surface-energy area having high surface energy and a low-surface-energy area having low surface energy; and a conductive layer formed on the high-surface-energy area. The high-surface-energy area includes a first area and a second area extending from the first area and having a width smaller than that of the first area.

摘要翻译： 所公开的层压结构包括含有可润湿变性材料的润湿性变化层，其表面能在其施加能量时发生变化，并且至少包括具有高表面能的高表面能区域和低表面能区域 表面能; 以及形成在高表面能区域上的导电层。 高表面能区域包括从第一区域延伸的第一区域和第二区域，其宽度小于第一区域的宽度。

公开(公告)号：US20090189148A1

公开(公告)日：2009-07-30

申请号：US12067251

申请日：2006-09-28

申请人： Mayuka Araumi ,  Ikue Kawashima ,  Akishige Murakami ,  Takumi Yamaga

发明人： Mayuka Araumi ,  Ikue Kawashima ,  Akishige Murakami ,  Takumi Yamaga

IPC分类号： H01L51/30 ,  H01L33/00 ,  H01L51/40 ,  H01L51/05

CPC分类号： H01L51/0537 ,  H01L27/283 ,  H01L51/0035

摘要： A transistor element that a transistor using an organic semiconductor layer on a substrate, an insulating film between layers contacting the organic semiconductor layer and an upper electrode electrically contacting the transistor via a through hole provided in the insulating film between layers are layered, wherein the insulating film between layers comprises a mixture of organic materials and particles.

摘要翻译： 使用在基板上使用有机半导体层的晶体管，与有机半导体层接触的层之间的绝缘膜和通过设置在层之间的绝缘膜中的通孔与晶体管电接触的上电极的晶体管元件，其中绝缘 层之间的膜包括有机材料和颗粒的混合物。

公开(公告)号：US08779434B2

公开(公告)日：2014-07-15

申请号：US12246134

申请日：2008-10-06

申请人： Takao Inoue ,  Takumi Yamaga ,  Atsushi Onodera

发明人： Takao Inoue ,  Takumi Yamaga ,  Atsushi Onodera

IPC分类号： H01L27/14 ,  H01L29/417

CPC分类号： H01L29/41733 ,  H01L27/124 ,  H01L29/42384

摘要： A thin film transistor array is disclosed. The thin film transistor array includes plural gate electrodes formed on an insulation substrate, plural source electrodes formed above or under the gate electrodes via a gate insulation film so that the source electrodes cross the gate electrodes in a planar view, plural drain electrodes formed at corresponding positions surrounded by the gate electrodes and the source electrodes in a planar view in the same layer as that of the source electrodes, semiconductor layers formed via the gate insulation film to face the gate electrodes for forming corresponding channel regions between the source electrodes and the drain electrodes. The plural gate electrodes are linearly formed, and the channel regions are disposed to face the gate electrodes.

摘要翻译： 公开了一种薄膜晶体管阵列。 薄膜晶体管阵列包括形成在绝缘基板上的多个栅电极，通过栅极绝缘膜形成在栅极电极上方或下方的多个源电极，使得源电极在平面图中与栅电极交叉，形成在相应的 位于与源极电极相同的平面图中由栅极电极和源极电极围绕的位置，经由栅极绝缘膜形成的面向栅电极的半导体层，用于在源电极和漏极之间形成相应的沟道区域 电极。 多个栅电极被线性地形成，并且沟道区被设置为面对栅电极。

公开(公告)号：US07999253B2

公开(公告)日：2011-08-16

申请号：US12067657

申请日：2007-07-19

申请人： Takumi Yamaga ,  Ikue Kawashima ,  Yoshikazu Akiyama

发明人： Takumi Yamaga ,  Ikue Kawashima ,  Yoshikazu Akiyama

IPC分类号： H01L51/00

CPC分类号： H01L51/105 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0545

摘要： An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.

摘要翻译： 公开了一种具有以高分辨率图案化的有机半导体层的有机晶体管。 有机晶体管包括栅电极，栅极绝缘膜，源电极，漏电极和由有机半导体材料形成的有机半导体层。 在基板上形成栅电极，栅极绝缘膜，源电极，漏电极和有机半导体层。 源电极和漏电极中的至少一个具有开口。

公开(公告)号：US20100193775A1

公开(公告)日：2010-08-05

申请号：US12670325

申请日：2007-10-17

申请人： Keiichiro Yutani ,  Hidenori Tomono ,  Takumi Yamaga

发明人： Keiichiro Yutani ,  Hidenori Tomono ,  Takumi Yamaga

IPC分类号： H01L51/50 ,  H01L51/10

CPC分类号： H01L51/0015 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0558

摘要： An organic transistor includes a substrate; a gate electrode and a gate insulating film sequentially formed on the substrate in the stated order; and a source electrode, a drain electrode, and an organic semiconductor layer formed on at least the gate insulating film. Ultraviolet light is radiated to the substrate from a side without the gate electrode, transmitted through the substrate and the gate insulating film, reflected at the gate electrode, and absorbed at the organic semiconductor layer. Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light.

摘要翻译： 有机晶体管包括基板; 栅极电极和栅极绝缘膜，按顺序形成在基板上; 以及形成在至少栅极绝缘膜上的源电极，漏电极和有机半导体层。 紫外光从没有栅电极的一侧辐射到基板，透过基板和栅极绝缘膜，在栅电极处被反射并在有机半导体层被吸收。 吸收了紫外线的有机半导体层的电导率低于未吸收紫外线的有机半导体层的电导率。

公开(公告)号：US20090272966A1

公开(公告)日：2009-11-05

申请号：US12067657

申请日：2007-07-19

申请人： Takumi Yamaga ,  Ikue Kawashima ,  Yoshikazu Akiyama

发明人： Takumi Yamaga ,  Ikue Kawashima ,  Yoshikazu Akiyama

IPC分类号： H01L51/52 ,  H01L51/10

CPC分类号： H01L51/105 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0545

摘要： An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.

摘要翻译： 公开了一种具有以高分辨率图案化的有机半导体层的有机晶体管。 有机晶体管包括栅电极，栅极绝缘膜，源电极，漏电极和由有机半导体材料形成的有机半导体层。 在基板上形成栅电极，栅极绝缘膜，源电极，漏电极和有机半导体层。 源电极和漏电极中的至少一个具有开口。

公开(公告)号：US20090206329A1

公开(公告)日：2009-08-20

申请号：US11816437

申请日：2006-02-15

申请人： Takumi Yamaga ,  Toshiya Sagisaka

发明人： Takumi Yamaga ,  Toshiya Sagisaka

IPC分类号： H01L51/30

CPC分类号： H01L51/0035 ,  C08G61/12 ,  H01L51/0059 ,  H01L51/0541 ,  H01L51/0545

摘要： To provide an organic thin film transistor including a pair of electrodes for allowing a current to flow through an organic semiconductor layer made of an organic semiconductor material, and a third electrode, wherein the organic semiconductor material is composed mainly of an arylamine polymer having a weight-average molecular weight (Mw) of 20,000 or more.

摘要翻译： 提供一种有机薄膜晶体管，其包括一对用于允许电流流过由有机半导体材料制成的有机半导体层的电极和第三电极，其中有机半导体材料主要由具有重量的芳基胺聚合物组成 平均分子量（Mw）为20,000以上。