公开(公告)号：US08111372B2

公开(公告)日：2012-02-07

申请号：US12515368

申请日：2007-11-19

申请人： Hideharu Kyouda ,  Junichi Kitano ,  Taro Yamamoto

发明人： Hideharu Kyouda ,  Junichi Kitano ,  Taro Yamamoto

IPC分类号： H01L21/66

CPC分类号： G03F7/70958 ,  G03F7/70341 ,  G03F7/70991 ,  H01L21/6715

摘要： A coating film forming apparatus for immersion light exposure includes one or more coating units configured to apply a resist film or a resist film and an additional film onto a substrate, one or more thermally processing units configured to perform a thermal process, a defect eliciting unit configured to perform a process for eliciting a latent defect of a coating film at an edge portion of the substrate, a checking unit configured to check a state of the coating film after the process by the defect eliciting unit, a control section configured to use a check result obtained by the checking unit to make a judgment of the state of the coating film and permit transfer of the substrate to the light exposure apparatus, and a cleaning unit configured to perform cleaning on the substrate before the process by the defect eliciting unit.

摘要翻译： 用于浸没曝光的涂膜形成装置包括一个或多个涂覆单元，其被配置为将抗蚀剂膜或抗蚀剂膜和附加膜施加到基板上，一个或多个热处理单元，被配置为执行热处理，缺陷引出单元 被配置为执行用于在所述基板的边缘部分处引导涂膜的潜在缺陷的处理，所述检查单元被配置为在所述缺陷引出单元处理之后检查所述涂膜的状态;控制部，被配置为使用 由检查单元获得的检查结果以判断涂膜的状态并允许将基板转移到曝光装置;以及清洁单元，被配置为在由缺陷引出单元进行处理之前在基板上进行清洁。

公开(公告)号：US20100073647A1

公开(公告)日：2010-03-25

申请号：US12515368

申请日：2007-11-19

申请人： Hideharu Kyouda ,  Junichi Kitano ,  Taro Yamamoto

发明人： Hideharu Kyouda ,  Junichi Kitano ,  Taro Yamamoto

IPC分类号： G03B27/52 ,  G03B27/32

CPC分类号： G03F7/70958 ,  G03F7/70341 ,  G03F7/70991 ,  H01L21/6715

摘要： A coating film forming apparatus for immersion light exposure, for forming a coating film including a resist film or a resist film and an additional film on a substrate to be fed to an immersion light exposure apparatus configured to perform a light exposure process through a liquid, includes: one or more coating units configured to apply the resist film or the resist film and the additional film onto the substrate; one or more thermally processing units configured to perform a thermal process necessary for forming the coating film on the substrate; a checking unit configured to check a state of the coating film at an edge portion of the substrate before the immersion light exposure; and a control section configured to use a check result obtained by the checking unit to make a judgment of whether or not the state of the coating film at the edge portion of the substrate is within an acceptable range, and to permit transfer of the substrate to the light exposure apparatus when the state of the coating film is within the acceptable range.

摘要翻译： 一种用于浸没曝光的涂膜形成装置，用于在被配置为通过液体进行曝光处理的浸没曝光装置的基板上形成包括抗蚀剂膜或抗蚀剂膜和附加膜的涂膜， 包括：被配置为将抗蚀剂膜或抗蚀剂膜和附加膜施加到基底上的一个或多个涂层单元; 一个或多个热处理单元，被配置为执行在基板上形成涂膜所需的热处理; 检查单元，被配置为在浸没曝光之前检查在所述基板的边缘部分处的所述涂膜的状态; 以及控制部，被配置为使用由所述检查单元获得的检查结果来判断在所述基板的边缘部分处的所述涂膜的状态是否在可接受的范围内，并且允许将所述基板转印到 当涂膜的状态在可接受的范围内时的曝光装置。

公开(公告)号：US06709174B2

公开(公告)日：2004-03-23

申请号：US10271588

申请日：2002-10-17

申请人： Taro Yamamoto ,  Akihiro Fujimoto ,  Kousuke Yoshihara ,  Hideharu Kyouda ,  Hirofumi Takeguchi

发明人： Taro Yamamoto ,  Akihiro Fujimoto ,  Kousuke Yoshihara ,  Hideharu Kyouda ,  Hirofumi Takeguchi

IPC分类号： G03D500

CPC分类号： H01L21/6715 ,  B05C5/0208 ,  B05C5/0254 ,  B05C11/08 ,  G03F7/3021

摘要： A solution-receiving plate having solution-passing holes for passing a developer solution therethrough toward the back side of the plate is provided. Respective surfaces of the solution-receiving plate and a substrate are at the same height, and the solution-receiving plate is placed on the front-end side of the substrate and separated slightly from the front end of the substrate. A supply nozzle is moved to apply a developer solution. Accordingly, when the developer solution extended continuously between the perimeter of the substrate and the supply nozzle is severed, the severed developer solution is prevented from returning to the developer solution already spread over the substrate and thus flow and waves are prevented from occurring in the developer solution spread on the surface of the substrate. A resist pattern with a highly uniform line width is thus produced.

摘要翻译： 提供一种溶液接收板，其具有用于使显影剂溶液通过其朝向板的背面的溶液通过孔。 溶液接收板和基板的相应表面处于相同的高度，并且溶液 - 接收板被放置在基板的前端侧并与基板的前端稍微分离。 移动供应喷嘴以施加显影剂溶液。 因此，当在基板的周边和供给喷嘴之间连续延伸的显影剂溶液被切断时，切断的显影剂溶液被防止返回已经铺展在基板上的显影剂溶液，从而防止在显影剂中发生波浪 溶液扩散在基材的表面上。 因此产生具有高度均匀线宽的抗蚀剂图案。

公开(公告)号：US20090130614A1

公开(公告)日：2009-05-21

申请号：US10584264

申请日：2004-12-24

申请人： Atsushi Ookouchi ,  Taro Yamamoto ,  Hirofumi Takeguchi ,  Hideharu Kyouda ,  Kousuke Yoshihara

发明人： Atsushi Ookouchi ,  Taro Yamamoto ,  Hirofumi Takeguchi ,  Hideharu Kyouda ,  Kousuke Yoshihara

IPC分类号： G03C5/00 ,  G03G15/10

CPC分类号： H01L21/67051 ,  G03F7/3021 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/6719 ,  Y10S134/902

摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

摘要翻译： 显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液 被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。 喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。 此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

公开(公告)号：US20070184392A1

公开(公告)日：2007-08-09

申请号：US11623481

申请日：2007-01-16

申请人： Hideharu Kyouda ,  Kousuke Yoshihara ,  Taro Yamamoto

发明人： Hideharu Kyouda ,  Kousuke Yoshihara ,  Taro Yamamoto

IPC分类号： G03C5/00

CPC分类号： G03F7/2041 ,  G03F7/11 ,  G03F7/38

摘要： A resist film formed on a substrate is coated with a water-repellent protective film and the substrate is subjected to a developing process after the substrate has been processed by an immersion exposure process. The protective film is removed from the substrate after the resist film has been processed by the immersion exposure process, the substrate is processed by a heating process, and then the substrate is subjected to a developing process. The surface of the substrate is cleaned with a cleaning liquid before the protective film is removed and after the substrate has been processed by the immersion exposure process or the surface of the substrate is cleaned with a cleaning liquid after removing the protective film and before the substrate is subjected to the heating process.

摘要翻译： 在基板上形成的抗蚀剂膜涂覆有防水保护膜，并且在通过浸没曝光工艺处理基板之后对基板进行显影处理。 在通过浸渍曝光工艺处理了抗蚀剂膜之后，从基板上除去保护膜，通过加热工艺处理基板，然后对基板进行显影处理。 在除去保护膜之前，用浸渍曝光工序处理基板后，用清洗液清洗基板的表面，在除去保护膜之后和基板之前用清洗液清洗基板的表面 进行加热处理。

公开(公告)号：US20070177869A1

公开(公告)日：2007-08-02

申请号：US10590314

申请日：2004-12-16

申请人： Taro Yamamoto ,  Hideharu Kyouda

发明人： Taro Yamamoto ,  Hideharu Kyouda

IPC分类号： G03D5/00

CPC分类号： G03F7/162 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/70341 ,  G03F7/70925 ,  H01L21/67028 ,  H01L21/67051

摘要： Accurate coating and developing having high intrasurface uniformity is achieved by suppressing the influence of components of a resist that may be eluted while a substrate coated with the resist is processed by immersion exposure. A coating unit coats a surface of a substrate with a resist. then, a first cleaning means including a cleaning nozzle cleans the substrate and then the substrate is subjected to an exposure process. Since only a small amount of components of the resist dissolves in a transparent liquid layer formed on the substrate for exposure, an exposure process can form lines in accurate line-widths. Consequently, a resist pattern of lines having accurate line-widths having high intrasurface uniformity can be formed on the substrate by developing the exposed resist.

摘要翻译： 通过抑制在通过浸渍曝光处理涂布有抗蚀剂的基材时，可以抑制可能被洗脱的抗蚀剂的成分的影响来实现具有高表面内均匀性的精确涂布和显影。 涂覆单元用抗蚀剂涂覆基材的表面。 然后，包括清洁喷嘴的第一清洁装置清洁基板，然后对基板进行曝光处理。 由于只有少量的抗蚀剂成分溶解在形成在用于曝光的基板上的透明液体层中，曝光处理可以形成精确线宽的线。 因此，通过显影曝光的抗蚀剂，可以在衬底上形成具有高表面内均匀性的精确线宽的线的抗蚀剂图案。

公开(公告)号：US06811962B2

公开(公告)日：2004-11-02

申请号：US10227814

申请日：2002-08-27

申请人： Kousuke Yoshihara ,  Keiichi Tanaka ,  Taro Yamamoto ,  Hideharu Kyouda ,  Hirofumi Takeguchi ,  Atsushi Ookouchi

发明人： Kousuke Yoshihara ,  Keiichi Tanaka ,  Taro Yamamoto ,  Hideharu Kyouda ,  Hirofumi Takeguchi ,  Atsushi Ookouchi

IPC分类号： G03F730

CPC分类号： H01L21/6715 ,  G03D3/06 ,  G03F7/3021

摘要： In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

摘要翻译： 在其上形成的显影液中的溶解速度低的抗蚀剂膜的显影处理中，首先将低浓度的显影液供给到晶片上，并将晶片放置在 规定的时间以允许显影反应进行，然后进一步提供浓度高于首先提供的显影溶液的显影溶液的显影溶液到晶片上，使基板静置并随后冲洗晶片，由此提高均匀性 晶片的中心部分和周边部分的线宽度。

公开(公告)号：US07823534B2

公开(公告)日：2010-11-02

申请号：US10584264

申请日：2004-12-24

申请人： Atsushi Ookouchi ,  Taro Yamamoto ,  Hirofumi Takeguchi ,  Hideharu Kyouda ,  Kousuke Yoshihara

发明人： Atsushi Ookouchi ,  Taro Yamamoto ,  Hirofumi Takeguchi ,  Hideharu Kyouda ,  Kousuke Yoshihara

IPC分类号： B05C5/02 ,  B05D1/36

CPC分类号： H01L21/67051 ,  G03F7/3021 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/6719 ,  Y10S134/902

摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

摘要翻译： 显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液 被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。 喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。 此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

公开(公告)号：US20070044823A1

公开(公告)日：2007-03-01

申请号：US11509737

申请日：2006-08-25

申请人： Taro Yamamoto ,  Hideharu Kyouda ,  Tetsu Kawasaki ,  Satoru Shimura

发明人： Taro Yamamoto ,  Hideharu Kyouda ,  Tetsu Kawasaki ,  Satoru Shimura

IPC分类号： B08B3/02

CPC分类号： H01L21/67051

摘要： A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction. The cleaning liquid poured out onto the surface of the substrate through the cleaning liquid pouring nozzle is restrained from flowing by a liquid damming member held at a height equal to or lower than that of the nozzle exit of the cleaning liquid pouring nozzle to collect a mass of the cleaning liquid. A high centrifugal force acts on the mass of the cleaning liquid to force the mass of the cleaning liquid to flow outward even if the substrate is rotated at a low rotating speed.

摘要翻译： 基板清洁装置和基板清洗方法减少了残留在基板上的液滴，以防止由于基板上残留液滴或水痕而导致的加热过程对基板的不规则加热。 将清洗液通过清洗液注入喷嘴注入到基板的表面上，使清洗液注入的区域从基板的中心部朝向圆周方向移动。 在衬底表面上的相对于衬底的旋转方向倾倒有清洁液体的区域之后的区域处，径向向外喷射气体。 气体迫使在基板表面流动的清洗液体的液膜在圆周方向和径向向外的方向上流动。 清洗液通过清洗液倒出嘴倾倒在基材表面上被限制在保持在与清洗液注入嘴的喷嘴出口相同或更小的高度的液体阻塞构件的流动中，从而收集质量 的清洗液。 即使基板以低转速旋转，高离心力作用在清洁液体上，以迫使清洁液体的质量向外流出。

公开(公告)号：US20050053874A1

公开(公告)日：2005-03-10

申请号：US10943840

申请日：2004-09-20

申请人： Kousuke Yoshihara ,  Keiichi Tanaka ,  Taro Yamamoto ,  Hideharu Kyouda ,  Hirofumi Takeguchi ,  Atsushi Ookouchi

发明人： Kousuke Yoshihara ,  Keiichi Tanaka ,  Taro Yamamoto ,  Hideharu Kyouda ,  Hirofumi Takeguchi ,  Atsushi Ookouchi

IPC分类号： G03D3/06 ,  G03F7/30 ,  H01L21/00 ,  H01L21/027 ,  G03C5/18

CPC分类号： H01L21/6715 ,  G03D3/06 ,  G03F7/3021

摘要： In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

摘要翻译： 在其上形成的显影液中的溶解速度低的抗蚀剂膜的显影处理中，首先将低浓度的显影液供给到晶片上，并将晶片放置在 规定的时间以允许显影反应进行，然后进一步提供浓度高于首先提供的显影溶液的显影溶液的显影溶液到晶片上，使基板静置并随后冲洗晶片，由此提高均匀性 晶片的中心部分和周边部分的线宽度。