Apparatus and method for etching semiconductor wafer
    13.
    发明授权
    Apparatus and method for etching semiconductor wafer 失效
    用于蚀刻半导体晶片的装置和方法

    公开(公告)号:US5395474A

    公开(公告)日:1995-03-07

    申请号:US268547

    申请日:1994-07-06

    CPC classification number: H01L21/3065 H01J37/026 H01L21/31116 H01L21/32136

    Abstract: A semiconductor wafer etching apparatus is capable of anisotropically etching a large-diameter semiconductor wafer with high accuracy without causing the semiconductor wafer to be charged. First, the apparatus cools the wafer in an atmosphere of a nitrogen or a halogen gas so that the wafer adsorbs and is covered by atoms of the gas. Then, a fast atom beam source of the apparatus generates an electrically neutral fast atom beam of gas atoms or molecules to etch the semiconductor wafer. The etching speed is promoted by an interaction of the adsorbed atoms and the fast atom beam.

    Abstract translation: 半导体晶片蚀刻装置能够高精度地各向异性地蚀刻大直径半导体晶片,而不会导致半导体晶片被充电。 首先,该装置在氮气或卤素气体的气氛中冷却晶片,使得晶片吸附并被气体的原子覆盖。 然后,该装置的快速原子束源产生气体原子或分子的电中性的快速原子束以蚀刻半导体晶片。 蚀刻速度通过吸附原子和快原子束的相互作用来促进。

    Electron accelerator
    14.
    发明授权
    Electron accelerator 失效
    电子加速器

    公开(公告)号:US5227700A

    公开(公告)日:1993-07-13

    申请号:US630323

    申请日:1990-12-19

    CPC classification number: H05H9/00 H01J37/243

    Abstract: An electron accelerator includes a thermal cathode, heated by infrared rays guided by a quartz rod, for emitting electrons, an accelerating section connected to a high voltage power supply, and a vacuum vessel containing the cathode and the acceleration section. The cathode may be heated by laser beam instead of the infrared rays. The current level of an accelerated electron beam is detected to generate a signal proportional to the detected level. The signal is used to adjust the intensity of the rays heating the cathode to prevent the level of electrons emitted from said cathode from fluctuating.

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