公开(公告)号：US08384860B2

公开(公告)日：2013-02-26

申请号：US12666461

申请日：2008-05-29

申请人： Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai ,  Yoshihito Hara ,  Mitsunori Imade ,  Junya Shimada

发明人： Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai ,  Yoshihito Hara ,  Mitsunori Imade ,  Junya Shimada

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/136286 ,  G02F2203/03

摘要： A liquid crystal display device has a plurality of pixels and a reflection section for reflecting incident light toward a display surface. The reflection section includes a metal layer having a plurality of apertures, and a reflective layer formed on the metal layer with an insulating layer interposed therebetween. A surface of the reflective layer includes a plurality of recesses or protrusions formed in accordance with a cross-sectional shape of the metal layer.

摘要翻译： 液晶显示装置具有多个像素和用于将入射光反射到显示面的反射部。 反射部分包括具有多个孔的金属层，以及在金属层上形成有绝缘层的反射层。 反射层的表面包括根据金属层的横截面形状形成的多个凹部或突起。

公开(公告)号：US08310640B2

公开(公告)日：2012-11-13

申请号：US12523765

申请日：2008-01-22

申请人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade

发明人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade

IPC分类号： G02F1/1333 ,  G02F1/1343

CPC分类号： G02F1/1393 ,  G02F1/133707 ,  G02F2001/134345

摘要： A liquid crystal display device according to the present invention includes a vertical alignment type liquid crystal layer 32. Each pixel electrode thereof 12 has a plurality of unit electrode portions 12a, each of which has a conductive film and slits 13 that have been cut through the conductive film. When a predetermined voltage is applied between the pixel electrode and a counter electrode, a liquid crystal domain is produced in association with each unit electrode portion and liquid crystal molecules in the liquid crystal domain come to have a substantially radially tilting alignment state. As a result, the device of the present invention achieves a wide viewing angle and a fast response characteristic.

摘要翻译： 根据本发明的液晶显示装置包括垂直取向型液晶层32.其每个像素电极12具有多个单元电极部分12a，每个单元电极部分12a具有导电膜和切口13 导电膜。 当在像素电极和对电极之间施加预定电压时，与每个单位电极部分相关联地产生液晶畴，并且液晶畴中的液晶分子具有基本上径向倾斜的取向状态。 结果，本发明的装置实现了广视角和快速响应特性。

公开(公告)号：US20100118238A1

公开(公告)日：2010-05-13

申请号：US12524914

申请日：2007-12-10

申请人： Junya Shimada ,  Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Mitsunori Imade ,  Yoshihito Hara

发明人： Junya Shimada ,  Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Mitsunori Imade ,  Yoshihito Hara

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/1362 ,  G02F2202/10

摘要： Reflection-type and transflective-type liquid crystal display devices having a high image quality, in which moiré or coloration is reduced, are provided at low cost.A liquid crystal display device according to the present invention is a liquid crystal display device having a reflection region in each of a plurality of pixels; the reflection region includes a metal layer, a semiconductor layer, and a reflective layer; a plurality of recesses and protrusions are formed on the surface of the reflective layer; the plurality of recesses are formed according to apertures in the metal layer; the plurality of protrusions are formed so as to conform to the shape of the semiconductor layer; a plurality of pairs among the plurality of recesses that adjoin along a direction include two pairs whose intervals between recesses are different from each other; and a plurality of pairs among the plurality of protrusions that adjoin along a direction include two pairs whose intervals between protrusions are different from each other.

摘要翻译： 以低成本提供了具有高图像质量的莫尔或着色降低的反射型和半透射型液晶显示装置。 根据本发明的液晶显示装置是在多个像素中的每一个具有反射区域的液晶显示装置; 反射区域包括金属层，半导体层和反射层; 在反射层的表面上形成多个凹凸， 所述多个凹部根据所述金属层中的孔而形成; 多个突起形成为符合半导体层的形状; 在沿着一个方向邻接的多个凹部中的多对，包括凹槽间的间隔彼此不同的两对; 并且沿着一个方向邻接的多个突起之间的多对，包括两个突起之间的间隔彼此不同的两对。

公开(公告)号：US08581257B2

公开(公告)日：2013-11-12

申请号：US13639138

申请日：2011-01-17

申请人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L27/15 ,  G02F1/13318 ,  G02F1/13338 ,  G02F1/136204 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

摘要： The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.

摘要翻译： 本发明的电路板（1）包括设置在单个绝缘基板（2）上的多个晶体管元件，用于各个像素的二维排列或者在一组预定数量的像素中的各个像素。 多个晶体管元件中的至少一个是具有由氧化物半导体形成的沟道层（11）的氧化物TFT（10），并且多个晶体管元件中的至少另一个是具有 沟道层（21）由例如非晶硅半导体形成。 氧化物TFT（10）和a-Si TFT（20）中的每一个都是底栅晶体管。

公开(公告)号：US20130092927A1

公开(公告)日：2013-04-18

申请号：US13639138

申请日：2011-01-17

申请人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  G02F1/13318 ,  G02F1/13338 ,  G02F1/136204 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

摘要： The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.

摘要翻译： 本发明的电路板（1）包括设置在单个绝缘基板（2）上的多个晶体管元件，用于各个像素的二维排列或者在一组预定数量的像素中的各个像素。 多个晶体管元件中的至少一个是具有由氧化物半导体形成的沟道层（11）的氧化物TFT（10），并且多个晶体管元件中的至少另一个是具有 沟道层（21）由例如非晶硅半导体形成。 氧化物TFT（10）和a-Si TFT（20）中的每一个都是底栅晶体管。

公开(公告)号：US09111810B2

公开(公告)日：2015-08-18

申请号：US13643652

申请日：2011-03-02

申请人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L27/146 ,  H01L27/144

CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1446 ,  H01L27/14632 ,  H01L27/14678

摘要： A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

摘要翻译： 电路板（1）在绝缘基板（2）上包括多个晶体管元件。 多个晶体管元件中的至少一个是氧化物TFT（10），其包括作为沟道层（11）的氧化物半导体。 多个晶体管元件中的至少一个是与作为电路元件的功能的氧化物TFT（10）不同的a-SiTFT（20）（i），（ii）包括作为沟道层（21）的无定形 硅半导体。 氧化物TFT（10）是顶栅晶体管，并且a-SiTFT（20）是底栅晶体管。 这提供：一种配置，其可以（a）增强配备有作为电路部件的各自功能不同的TFT的电路板的性能，（b）减小安装TFT所需的面积; 以及电路基板的制造方法。

公开(公告)号：US20130214279A1

公开(公告)日：2013-08-22

申请号：US13695082

申请日：2011-02-23

申请人： Jun Nishimura ,  Hideki Kitagawa ,  Atsuhito Murai ,  Hajime Imai ,  Shinya Tanaka ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Junya Shimada ,  Kazunori Morimoto

发明人： Jun Nishimura ,  Hideki Kitagawa ,  Atsuhito Murai ,  Hajime Imai ,  Shinya Tanaka ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Junya Shimada ,  Kazunori Morimoto

IPC分类号： H01L27/02

CPC分类号： H01L29/78663 ,  G02F1/13338 ,  G02F1/13624 ,  G06F3/0412 ,  H01L27/0207 ,  H01L27/0705 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/78633 ,  H01L29/7869

摘要： A source and drain electrode layer (3s/3d) of an oxide TFT element (3) is formed by a first conductive layer. A gate electrode (3g) of the oxide TFT element (3) and a gate electrode (5g) of an a-Si TFT element (5) are formed by a single conductive layer, that is, a second conductive layer. A source and drain electrode layer (5s/5d) of the a-Si TFT element (5) is formed by a third conductive layer. The third conductive layer is formed above the second conductive layer in a thickness direction in which each conductive layer is stacked on an insulating substrate (2). Further, the first conductive layer is formed below the second conductive layer in the thickness direction. Therefore, it is possible to provide a circuit board that can have an improved degree of integration of transistor elements formed on the insulating substrate.

摘要翻译： 氧化物TFT元件（3）的源极和漏极电极层（3s / 3d）由第一导电层形成。 氧化物TFT元件（3）的栅极（3g）和a-Si TFT元件（5）的栅电极（5g）由单个导电层即第二导电层形成。 a-Si TFT元件（5）的源极和漏极电极层（5s / 5d）由第三导电层形成。 第三导电层形成在第二导电层上方的厚度方向上，其中每个导电层堆叠在绝缘基板（2）上。 此外，第一导电层在厚度方向上形成在第二导电层的下方。 因此，可以提供可以使形成在绝缘基板上的晶体管元件的集成度提高的电路板。

公开(公告)号：US20130146866A1

公开(公告)日：2013-06-13

申请号：US13643652

申请日：2011-03-02

申请人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L27/12

CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1446 ,  H01L27/14632 ,  H01L27/14678

摘要： A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

摘要翻译： 电路板（1）在绝缘基板（2）上包括多个晶体管元件。 多个晶体管元件中的至少一个是氧化物TFT（10），其包括作为沟道层（11）的氧化物半导体。 多个晶体管元件中的至少一个是与作为电路元件的功能的氧化物TFT（10）不同的a-SiTFT（20）（i），（ii）包括作为沟道层（21）的无定形 硅半导体。 氧化物TFT（10）是顶栅晶体管，并且a-SiTFT（20）是底栅晶体管。 这提供：一种配置，其可以（a）增强配备有作为电路部件的各自功能不同的TFT的电路板的性能，（b）减小安装TFT所需的面积; 以及电路基板的制造方法。

公开(公告)号：US08300186B2

公开(公告)日：2012-10-30

申请号：US12299138

申请日：2007-04-05

申请人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara

发明人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F2001/136281

摘要： A liquid crystal display device, which can be a transflective-type or a reflection-type, includes a reflection section arranged to reflect incident light toward a display surface, wherein the reflection section includes a reflective layer provided on a substrate, and includes a first recess formed in a surface of the reflective layer and a second recess formed in the surface of the reflective layer in the first recess. The first recess corresponds to an aperture of a Cs metal layer, and the second recess corresponds to an aperture of a semiconductor layer. The transflective-type or reflection-type liquid crystal display device has a high image quality at low cost.

摘要翻译： 可以是透反射型或反射型的液晶显示装置包括反射部分，其被布置成将入射光反射到显示表面，其中反射部分包括设置在基板上的反射层，并且包括第一 形成在反射层的表面中的凹部和形成在第一凹部中的反射层的表面中的第二凹部。 第一凹部对应于Cs金属层的孔，第二凹槽对应于半导体层的孔。 半反射型或反射型液晶显示装置以低成本具有高图像质量。

公开(公告)号：US20090195741A1

公开(公告)日：2009-08-06

申请号：US12306959

申请日：2007-06-08

申请人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai

发明人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai

IPC分类号： G02F1/1335 ,  G02F1/13

CPC分类号： G02F1/133555 ,  G02F1/133345 ,  G02F1/133371 ,  G02F1/136227

摘要： An objective of the present invention is to provide a transflective type liquid crystal display device and a reflection type liquid crystal display device having a high image quality at low cost. A liquid crystal display device according to the present invention is a liquid crystal display device having a reflection section for reflecting incident light toward a display surface. The reflection section includes an insulating layer; a semiconductor layer formed above the insulating layer; and a reflective layer formed above the semiconductor layer. On a surface of the reflective layer, a first recess and a second recess which is located inside the first recess are formed. The reflection section includes a first region and a second region which differ in a total thickness of a thickness of the insulating layer and a thickness of the semiconductor layer. The first recess and the second recess are formed in accordance with a cross-sectional shape of at least one of the insulating layer and the semiconductor layer.

摘要翻译： 本发明的目的是提供一种低成本的具有高图像质量的半透射型液晶显示装置和反射型液晶显示装置。 根据本发明的液晶显示装置是具有用于将入射光反射到显示面的反射部的液晶显示装置。 反射部分包括绝缘层; 形成在绝缘层之上的半导体层; 以及形成在半导体层上方的反射层。 在反射层的表面上形成有位于第一凹部内的第一凹部和第二凹部。 反射部分包括绝缘层的厚度和半导体层的厚度的总厚度不同的第一区域和第二区域。 第一凹部和第二凹部根据绝缘层和半导体层中的至少一个的截面形状形成。