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    CIRCUIT BOARD, DISPLAY DEVICE, AND METHOD FOR PRODUCING CIRCUIT BOARD
    3.
    发明申请
    CIRCUIT BOARD, DISPLAY DEVICE, AND METHOD FOR PRODUCING CIRCUIT BOARD 有权
    电路板，显示装置及制造电路板的方法

    公开(公告)号：US20130146866A1

    公开(公告)日：2013-06-13

    申请号：US13643652

    申请日：2011-03-02

    申请人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

    发明人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

    IPC分类号： H01L27/12

    CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1446 ,  H01L27/14632 ,  H01L27/14678

    摘要： A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

    摘要翻译： 电路板（1）在绝缘基板（2）上包括多个晶体管元件。 多个晶体管元件中的至少一个是氧化物TFT（10），其包括作为沟道层（11）的氧化物半导体。 多个晶体管元件中的至少一个是与作为电路元件的功能的氧化物TFT（10）不同的a-SiTFT（20）（i），（ii）包括作为沟道层（21）的无定形 硅半导体。 氧化物TFT（10）是顶栅晶体管，并且a-SiTFT（20）是底栅晶体管。 这提供：一种配置，其可以（a）增强配备有作为电路部件的各自功能不同的TFT的电路板的性能，（b）减小安装TFT所需的面积; 以及电路基板的制造方法。

    TFT, SHIFT REGISTER, SCAN SIGNAL LINE DRIVING CIRCUIT, AND DISPLAY DEVICE
    9.
    发明申请
    TFT, SHIFT REGISTER, SCAN SIGNAL LINE DRIVING CIRCUIT, AND DISPLAY DEVICE 审中-公开
    TFT，SHIFT寄存器，扫描信号线驱动电路和显示装置

    公开(公告)号：US20110007049A1

    公开(公告)日：2011-01-13

    申请号：US12736158

    申请日：2009-01-30

    申请人： Tetsuo Kikuchi ,  Shinya Tanaka ,  Hajime Imai ,  Hideki Kitagawa ,  Chikao Yamasaki ,  Yoshiharu Kataoka

    发明人： Tetsuo Kikuchi ,  Shinya Tanaka ,  Hajime Imai ,  Hideki Kitagawa ,  Chikao Yamasaki ,  Yoshiharu Kataoka

    IPC分类号： G09G5/00 ,  H01L33/08 ,  H01L33/16

    CPC分类号： H01L27/124 ,  G02F1/1368 ,  G09G3/3677 ,  G09G2310/0286 ,  H01L27/1255

    摘要： A TFT includes, in at least one embodiment, a capacitor formed: so as to have a region where a first capacitor electrode connected to a source electrode and a second capacitor electrode connected to a gate electrode are arranged to be stacked in a thickness direction and mutually opposed across a first dielectric layer therebetween; and so as to have a region where the first capacitor electrode and a third capacitor electrode connected to the gate electrode are arranged to be stacked in the thickness direction and mutually opposed across a second dielectric layer therebetween with a coupling between the first capacitor electrode and the third capacitor electrode and a coupling between the first capacitor electrode and the second capacitor electrode formed over mutually opposite faces of the first capacitor electrode. This realizes a TFT which can save a footprint of a capacitor connected to a TFT body section.

    摘要翻译： 在至少一个实施例中，TFT包括形成的电容器，以便具有连接到源电极的第一电容器电极和连接到栅电极的第二电容器电极被布置成在厚度方向上堆叠的区域， 在它们之间的第一电介质层彼此相对; 并且具有第一电容器电极和连接到栅电极的第三电容器电极被布置成在厚度方向上堆叠并且在其间的第二介电层相互相对的区域，其中第一电容器电极和第一电容器电极之间的耦合 第三电容器电极以及在第一电容器电极的彼此相对的面上形成的第一电容器电极和第二电容器电极之间的耦合。 这实现了TFT，其可以节省连接到TFT主体部分的电容器的占位面积。